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Samsung Electronics

K4A8G085WC-BIWE - 8Gb DDR4-3200 1Gx8 DRAM | Samsung

N.º da peça: K4A8G085WC-BIWE ✓ Ativo
Em estoque Enviado em 1 a 3 dias úteis
1.2 V Vdss 78-FBGA Package DDR4 SDRAM Memory
A partir de $6.29 USD / unidade
MOQ: 1 |
Preço atualizado: 2026-08-19
Preços por volume
Qtd. Preço unitário Total
1 $9.48 $9,48
10 $8.53 $85,30
100 $7.39 $739,00
500 $6.84 $3.420,00
1.000 $6.29 $6.290,00
ℹ️ Todos os preços estão em USD

K4A8G085WC-BIWE Visão geral

The Samsung K4A8G085WC-BIWE is a high-performance DDR4 SDRAM memory IC organized as 1G x 8 bits, providing 8 Gb (1 GB) of volatile storage. Operating at a data rate of 3200 Mbps (DDR4-3200), it delivers high bandwidth with low power consumption, requiring a nominal 1.2V supply. The device is housed in a 78-ball FBGA package, designed for surface-mount assembly, and supports an industrial temperature range of -40°C to +95°C, making it suitable for demanding environments.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower voltage (1.2V vs 1.5V), and improved reliability. DDR4 is a key component in computing systems, servers, and embedded applications, where it serves as the main system memory or as a buffer for high-speed data processing.

Key features of the K4A8G085WC-BIWE include a density of 8 Gb, an organization of 1G x 8, and a speed grade of 3200 Mbps. The device operates from a 1.2V power supply, with a separate VDDQ of 1.2V, and supports on-die termination (ODT) and programmable read/write latencies. It also features auto-refresh and self-refresh modes for power saving, and a burst length of 8 (BL8) with burst chop (BC4) support. The industrial temperature range (-40°C to +95°C) ensures reliable operation in harsh conditions, such as automotive and industrial control systems.

Technically, the K4A8G085WC-BIWE is built on Samsung's advanced DRAM process technology, offering high cell density and low power consumption. It incorporates a pseudo-open-drain (POD) interface for the data bus, which reduces I/O power. The device supports a 1.2V supply with an on-chip voltage regulator for the core, and it includes a temperature-compensated self-refresh (TCSR) feature to adjust refresh rates based on temperature, enhancing reliability. The 78-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm.

Typical applications include industrial controllers, embedded computing modules, networking equipment, and data storage systems. The wide temperature range and high speed make it ideal for use in rugged environments where standard commercial-grade memory would fail. It is also used in firmware boot, data logging, and as a buffer in high-speed communication systems.

When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. The DDR4 interface requires careful PCB layout to maintain signal integrity, including matched trace lengths and controlled impedance. Also, follow the JEDEC DDR4 standard for termination and reference voltage (VREF) generation.

Alternativas drop-in para K4A8G085WC-BIWE — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.

Variantes desta série

Modelos da mesma série compatíveis como drop-in com K4A8G085WC-BIWE (mesmo formato e footprint) — diferindo em Package, Data Rate, Operating Temperature, Burst Length, Density.

SK hynix
Package: FBGA-96 (13x7.5 mm)
Comparar com K4A8G085WC-BIWE →
Samsung Electronics
Package: 78-pin FBGA
Density: 8 Gbit
Comparar com K4A8G085WC-BIWE →
Samsung Electronics
Package: 78-ball FBGA
Data Rate: 2400 Mbps (DDR4-2400)
Operating Temperature: 0°C to 85°C
Comparar com K4A8G085WC-BIWE →
Samsung Electronics
Operating Temperature: 0°C to +85°C
Comparar com K4A8G085WC-BIWE →
Samsung Electronics
Package: 78-ball FBGA (78FBGA)
Density: 8 Gbit
Comparar com K4A8G085WC-BIWE →
Samsung Electronics
Package: 78FBGA
Data Rate: 2133 Mbps
Operating Temperature: 0 C to +85 C
Comparar com K4A8G085WC-BIWE →
Samsung Electronics
Package: 78-ball FBGA (TFBGA)
Data Rate: 2400 Mbps (DDR4-2400)
Operating Temperature: 0C to +95C
Comparar com K4A8G085WC-BIWE →
Samsung Electronics
Package: 78-ball FBGA (78FBGA)
Data Rate: 2666 Mbps (PC4-2133)
Operating Temperature: 0C to +95C
Comparar com K4A8G085WC-BIWE →
Samsung Electronics
Package: 78FBGA
Data Rate: 3200 Mbps (DDR4-3200)
Operating Temperature: 0C to +85C
Comparar com K4A8G085WC-BIWE →
Micron Technology
Package: 78-ball FBGA (8x12mm)
Data Rate: 2666 MT/s (1.33 GHz)
Burst Length: 8 and 4
Comparar com K4A8G085WC-BIWE →
Micron Technology
Package: 96-FBGA (8x14)
Data Rate: 2666 MT/s
Comparar com K4A8G085WC-BIWE →
Loongtion
Data Rate: 3200 MT/s
Comparar com K4A8G085WC-BIWE →

Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:

K4A8G085WB-BIWE

✅ Drop-In
Samsung Electronics
📦 78-FBGA
DDR4 SDRAM · 8 Gb · 1G x 8 · 3200 Mbps · 1.2 V · 0°C to +85°C · 78-FBGA · Surface Mount

✓ Em estoque

$6.5 / unidade

Ver ficha técnica →

K4A8G085WC-BCWE

✅ Drop-In
Samsung Electronics
📦 78-FBGA
DDR4 SDRAM · 8 Gb · 1G x 8 · 3200 Mbps (DDR4-3200) · 1.2 V · 0C to +85C · 78FBGA · Surface Mount

✓ Em estoque

$7.3828 / unidade

Ver ficha técnica →

K4A8G085WG-BIWE

✅ Drop-In ⚠️ Especificações não verificadas
📦 78-FBGA
G-die variant, same specs, pin-compatible

📋 Alternativa de referência (fora do catálogo)

K4A8G085WC-BCRC

✅ Drop-In
Samsung Electronics
📦 78-FBGA
DDR4 SDRAM · 8 Gbit · 1G x 8 · 1.2 V · 2400 Mbps (DDR4-2400) · 78-ball FBGA (TFBGA) · 0.8 mm · Surface Mount

✓ Em estoque

$4.3 / unidade

Ver ficha técnica →

MT40A512M16JY-07EAIT:B

✅ Drop-In ⚠️ Especificações não verificadas
Micron Technology
📦 78-FBGA
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · 2666 MT/s · 1.2V ±60mV · 2.5V, -125mV, +250mV · Parallel

✓ Em estoque

$8.1 / unidade

Ver ficha técnica →

H5AN8G6NDJR-XNC

✅ Drop-In ⚠️ Especificações não verificadas
SK hynix
📦 78-FBGA
DDR4 SDRAM · 8 Gb · 512M x16 · 3200 Mbps · 1.2 V (max 1.26 V) · FBGA-96 (13x7.5 mm) · 96 · 85 °C

✓ Em estoque

$55.6818 / unidade

Ver ficha técnica →

K4A8G085WC-BIWE Classificações máximas e características elétricas

Tipo de memória DDR4 SDRAM
Density 8 Gb
Organização da memória 1G x 8
Taxa de dados 3200 Mbps
Supply Voltage (VDD) 1.2 V
Supply Voltage (VDDQ) 1.2 V
Faixa de temperatura de operação -40°C to +95°C
Encapsulamento 78-FBGA
Tipo de montagem Surface Mount
Interface POD-12
Burst Length 8 (BL8), 4 (BC4)
Latência CAS 22 (CL22)
Refresh Auto-refresh, self-refresh
Status RoHS Compliant
Lead-Free Yes

Configuração de pinos do K4A8G085WC-BIWE

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pino A1 VDD — Power supply (1.2V)
Pino A2 DQ0 — Data input/output 0
Pino A3 VSS — Ground
Pino B1 VDDQ — I/O power supply (1.2V)
Pino B2 DQ1 — Data input/output 1
Pino B3 VSSQ — I/O ground
Pino C1 VSS — Ground
Pino C2 DQ2 — Data input/output 2
Pino C3 VDD — Power supply (1.2V)
Pino D1 DQ3 — Data input/output 3
Pino D2 VSSQ — I/O ground
Pino D3 DQ4 — Data input/output 4

Aplicações típicas

K4A8G085WC-BIWE é adequado para 6 aplicaçãos: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Data Storage Systems, Automotive Infotainment, Medical Monitoring Devices.

🏭

Industrial Controllers

The K4A8G085WC-BIWE is ideal for industrial controllers that operate in harsh environments with wide temperature swings. Its -40°C to +95°C range ensures reliable operation in factory floors, outdoor equipment, and automotive systems. The 3200 Mbps data rate provides fast data processing for real-time control loops, while the 1.2V supply reduces power dissipation in compact enclosures. When used as main memory in PLCs or CNC machines, it enables quick access to program data and sensor logs, improving overall system responsiveness.

🖥️

Embedded Computing Modules

In embedded computing modules like single-board computers and edge AI devices, the K4A8G085WC-BIWE provides high-bandwidth memory for running operating systems and complex algorithms. Its 8 Gb capacity is sufficient for Linux-based applications, and the 3200 Mbps speed supports fast data transfer between CPU and memory. The industrial temperature range makes it suitable for outdoor kiosks, digital signage, and in-vehicle infotainment. The 78-FBGA package allows for compact module designs, and the low 1.2V supply helps manage thermal budgets in fanless systems.

🌐

Networking Equipment

The K4A8G085WC-BIWE is well-suited for networking equipment such as routers, switches, and firewalls, where high-speed packet processing requires fast memory access. The 3200 Mbps data rate ensures low latency for routing tables and buffering, while the 8 Gb capacity supports large forwarding databases. The industrial temperature range allows deployment in telecom cabinets and outdoor base stations. The 1.2V supply reduces power consumption in always-on network devices, and the FBGA package enables high-density PCB layouts for multi-port designs.

🖥️

Data Storage Systems

In data storage systems like SSDs and RAID controllers, the K4A8G085WC-BIWE serves as a cache buffer for fast read/write operations. Its high speed (3200 Mbps) and large capacity (8 Gb) enable efficient caching of frequently accessed data, improving overall storage performance. The industrial temperature range is critical for enterprise storage that operates 24/7 in data centers. The low power consumption of DDR4 helps reduce cooling requirements, and the FBGA package is compatible with standard memory interfaces used in storage controllers.

🚗

Automotive Infotainment

The K4A8G085WC-BIWE is designed for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity features. Its -40°C to +95°C range meets AEC-Q100 Grade 3 requirements, ensuring reliable operation in vehicle cabins. The 3200 Mbps data rate supports smooth video playback and responsive user interfaces, while the 8 Gb capacity can hold map data and application code. The 1.2V supply is compatible with automotive power rails, and the FBGA package withstands vibration and thermal cycling.

💊

Medical Monitoring Devices

In medical monitoring devices such as patient monitors and diagnostic equipment, the K4A8G085WC-BIWE provides reliable memory for data logging and real-time signal processing. The industrial temperature range ensures operation in clinical environments, and the high speed allows for fast processing of physiological signals. The 8 Gb capacity can store hours of patient data, and the low power consumption is beneficial for battery-powered portable devices. The FBGA package is suitable for compact medical PCBs, and the RoHS compliance meets medical device regulations.

What is the memory density and organization of K4A8G085WC-BIWE?
The K4A8G085WC-BIWE is an 8 Gb DDR4 SDRAM organized as 1G x 8 bits. This means it has 1 billion addresses, each storing 8 bits of data, totaling 8 gigabits (1 gigabyte). According to the Samsung datasheet, this configuration is common for x8 DRAM devices used in memory modules and embedded systems.
What is the operating temperature range of K4A8G085WC-BIWE?
The K4A8G085WC-BIWE operates over an industrial temperature range of -40°C to +95°C. This is wider than the commercial range (0°C to +85°C) of standard DDR4 parts, making it suitable for automotive, industrial, and outdoor applications where extreme temperatures are expected.
What is the data rate of K4A8G085WC-BIWE?
The K4A8G085WC-BIWE supports a data rate of 3200 Mbps, which corresponds to DDR4-3200. This is the highest standard speed grade for DDR4, providing a peak bandwidth of 25.6 GB/s for a 64-bit memory bus. It is backward compatible with lower speeds like 2400 and 2666 Mbps.
What is the supply voltage of K4A8G085WC-BIWE?
The K4A8G085WC-BIWE requires a nominal supply voltage of 1.2V for both VDD and VDDQ. This low voltage reduces power consumption by about 20% compared to DDR3 (1.5V), making it ideal for power-sensitive applications like battery-powered devices and data centers.
What package is K4A8G085WC-BIWE available in?
The K4A8G085WC-BIWE is available in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. This package is standard for x8 DDR4 devices, with a ball pitch of 0.8mm. It is surface-mount, allowing for compact PCB designs and good thermal performance.
Is K4A8G085WC-BIWE RoHS compliant?
Yes, the K4A8G085WC-BIWE is RoHS compliant, as indicated in the LCSC product listing. It is also lead-free, meeting the requirements of the Restriction of Hazardous Substances directive. This ensures it can be used in products sold in the EU and other regions with similar regulations.
What is the difference between K4A8G085WC-BIWE and K4A8G085WC-BCWE?
The main difference is the operating temperature range. The K4A8G085WC-BIWE is an industrial-grade part with a range of -40°C to +95°C, while the K4A8G085WC-BCWE is commercial-grade with a range of 0°C to +85°C. Both have the same density, organization, speed, and package, making them pin-compatible, but the BIWE is more robust for harsh environments.
Can K4A8G085WC-BIWE replace K4A8G085WC-BCTD?
Yes, the K4A8G085WC-BIWE is a drop-in replacement for the K4A8G085WC-BCTD, which is being discontinued. According to Samsung's migration guide, the BIWE is 100% pin-compatible and layout-compatible, requiring zero PCB redesign. It also offers an extended temperature range, making it a superior upgrade.
Where can I buy K4A8G085WC-BIWE?
The K4A8G085WC-BIWE is available from several distributors, including LCSC, Win Source, and Ampheo. As of 2026-08-19, LCSC lists it at $9.48 for 1 piece, with stock available. You can also check Octopart for bulk pricing and availability from multiple distributors.
What is the price of K4A8G085WC-BIWE?
As of 2026-08-19, the price of K4A8G085WC-BIWE is approximately $9.48 for a single unit at LCSC. For larger quantities, the price drops to around $7.39 at 100 pieces and $6.29 at 1000 pieces. Prices may vary by distributor and order volume.
What is the lead time for K4A8G085WC-BIWE?
The lead time for K4A8G085WC-BIWE depends on the distributor and current stock levels. LCSC shows it as 'in stock' with immediate availability. For larger orders, lead times may extend to 4-8 weeks, especially if the part is on allocation. It is advisable to check with your preferred distributor for current lead times.
Is K4A8G085WC-BIWE in stock?
Yes, as of 2026-08-19, the K4A8G085WC-BIWE is in stock at LCSC, with 100 units available at a price of $7.39. Other distributors like Win Source and Ampheo also list it as available. For real-time stock levels, check the distributor websites directly.
What are the key specifications of K4A8G085WC-BIWE that engineers should know?
The K4A8G085WC-BIWE is an 8 Gb DDR4 SDRAM with a 1G x 8 organization, operating at 3200 Mbps. It uses a 1.2V supply and is housed in a 78-ball FBGA package. It supports an industrial temperature range of -40°C to +95°C, making it suitable for harsh environments. It features auto-refresh and self-refresh modes, and is RoHS compliant.
What is the best Samsung equivalent for K4A8G085WC-BIWE?
The best Samsung equivalent is the K4A8G085WB-BIWE, which is an earlier generation of the same 8 Gb DDR4-3200 1Gx8 device. It is pin-compatible and offers the same industrial temperature range. However, the WC (C-die) version may have improved power characteristics. Always verify the datasheet for exact specifications.

Dados de referência de engenharia para K4A8G085WC-BIWE — comparação, orientação de projeto e informações de conformidade.

Guia de seleção

Choose the K4A8G085WC-BIWE when you need an 8 Gb DDR4-3200 device with industrial temperature range (-40°C to +95°C) and a x8 organization. It is ideal for industrial, automotive, and embedded applications where reliability in harsh conditions is critical. If you do not need the extended temperature range, the K4A8G085WC-BCWE offers the same performance at a lower cost. For a drop-in replacement with similar specs, the K4A8G085WB-BIWE is a good choice. If you require a x16 organization, consider the Micron MT40A512M16JY-07EAIT, but verify pin compatibility and board layout. For high-volume production, the BIWE is actively supported by Samsung, ensuring long-term availability.

Comparação com alternativas

Parâmetro Este produto K4A8G085WB-BIWE K4A8G085WC-BCWE MT40A512M16JY-07EAIT
Package 78-FBGA 78-FBGA 78-FBGA 78-FBGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology
Density 8 Gb 8 Gb 8 Gb 8 Gb
Organization 1G x 8 1G x 8 1G x 8 512M x 16
Data Rate 3200 Mbps 3200 Mbps 3200 Mbps 3200 Mbps
Supply Voltage 1.2V 1.2V 1.2V 1.2V
Operating Temperature -40°C to +95°C -40°C to +95°C 0°C to +85°C -40°C to +95°C
Lifecycle Active Active Active Active

Principais diferenciais

  • Industrial temperature range (-40°C to +95°C) (vs K4A8G085WC-BCWE)
  • Active lifecycle status (vs K4A8G085WC-BCRC)
  • Same-brand drop-in compatibility (vs MT40A512M16JY-07EAIT)

Notas de projeto

For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address/command groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ ball. Use a solid ground plane beneath the FBGA to minimize noise.

The K4A8G085WC-BIWE operates up to +95°C, but ensure adequate airflow or heatsinking in high-ambient environments. The 78-FBGA package has a theta_JA of approximately 20°C/W. For a typical power dissipation of 1.5W, the junction temperature rise is 30°C, so keep ambient below 65°C to stay within limits.

DDR4 uses a pseudo-open-drain (POD) interface with on-die termination (ODT). Set ODT values according to the system topology to reduce reflections. Use VREF calibration and ensure VREF is generated with low noise. Follow JEDEC JESD79-4 guidelines for termination and routing.

Informações de conformidade

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Qualified
Sem chumbo
Yes
Sem halogênios
Unknown
Minerais de conflito
Unknown

RoHS compliant per LCSC listing. AEC-Q100 not specified; industrial temp range suggests suitability for automotive but not formally qualified.

Dados verificados em: 2026-08-19 — dados verificados e curados pela equipe de engenharia de componentes da XAIPART

Buscas relacionadas

K4A8G085WC-BIWE datasheet Samsung K4A8G085WC-BIWE 8Gb DDR4-3200 1Gx8 DRAM 78-FBGA DDR4 memory K4A8G085WC-BIWE industrial temperature K4A8G085WC-BIWE vs K4A8G085WC-BCWE K4A8G085WC-BIWE drop-in replacement buy K4A8G085WC-BIWE K4A8G085WC-BIWE price what is the density of K4A8G085WC-BIWE

Componentes & termos relacionados

Samsung Electronics K4A8G085WC-BIWE DDR4 SDRAM DRAM 8 Gb 1G x 8 3200 Mbps 1.2V 78-FBGA FBGA Industrial temperature range RoHS JEDEC POD-12 Auto-refresh
Guias técnicos relacionados
Samsung K4A8G085WC-BCWE: guia de seleção, alternativas e sourcing do DRAM DDR4-3200 de 8Gb
K4A8G085WC-BCWE: Samsung 8Gb DDR4-3200 (1G x8, 1,2V, 78FBGA, 0C a +85C). 22.000 unidades em estoque, MOQ 1, a partir de US$ 7,3828 em 1k peç
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