NXP Semiconductors
MWE6IC9100NR1 - 100W 26V GSM/EDGE RF LDMOS Amplifier | NXP
部品番号: MWE6IC9100NR1 ✓ 生産中
在庫あり
1〜3営業日以内に発送
26 V (Vdd), 28 V supply rating Vdss
TO-270 WB-14 (gull-wing, flat leads) Package
869 MHz to 960 MHz Speed
開始価格 $118.5
USD / 個
MOQ: 1 |
価格更新日: 2026-10-15
ボリューム価格
| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $181.5 | $181.50 |
| 10 | $172.43 | $1,724.30 |
| 100 | $154.28 | $15,428.00 |
| 500 | $136.13 | $68,065.00 |
| 1,000 | $118.5 | $118,500.00 |
ℹ️ すべての価格はUSDです
MWE6IC9100NR1 概要
The NXP MWE6IC9100NR1 is a 100 W wideband integrated RF power amplifier engineered for GSM and EDGE base-station applications from 869 MHz to 960 MHz, housed in a TO-270 WB-14 (gull-wing) surface-mount package. This multi-stage LDMOS (Laterally Diffused Metal-Oxide Semiconductor) power IC integrates on-chip input and output matching, a gain of 33.5 dB at 960 MHz, and operates from a 26 V DC supply with a 28 V absolute supply rating. The part was originally introduced by Freescale Semiconductor and is now sold under NXP following the 2015 acquisition, and remains in active production as a building block for cellular infrastructure.
An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.
Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.
Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.
An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.
Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.
Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.
ドロップイン代替品: MWE6IC9100NR1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
この製品に利用可能なドロップイン代替品はありません。
代替品をリクエストMWE6IC9100NR1 最大定格＆電気的特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 869 MHz to 960 MHz |
| RF Type / Application | GSM, EDGE |
| Typical Output Power | 100 W (Pout, CW) |
| 動作電源電圧 | 26 V (Vdd), 28 V supply rating |
| Maximum Supply Voltage | 32 V (rated) |
| Power Gain | 33.5 dB at 960 MHz |
| パッケージ / ケース | TO-270 WB-14 (gull-wing, flat leads) |
| 実装タイプ | Surface Mount |
| Packaging | Tape and Reel (TR) |
| Lead Configuration | Flat leads, gull-wing |
MWE6IC9100NR1 to-270 wb-14 (gull-wing, flat leads) ピン配置ガイド
MWE6IC9100NR1 (to-270 wb-14 (gull-wing, flat leads) パッケージ) のピン配置。 このアナログコンポーネントは、入力、出力、および電源ピンを備えています。オフセットナル、補償、イネーブルピンの設定については、メーカーのデータシートを参照してください。信号調整やアンプ回路に最適です。
詳細なピン配置データはありません: MWE6IC9100NR1.
詳細は データシート をご参照ください。
主な用途
MWE6IC9100NR1 の用途: 3 件s: 信号コンディショニング, データ収集, オーディオ処理.
信号コンディショニング
MWE6IC9100NR1を使用したセンサー信号の増幅とフィルタリング。
データ収集
MWE6IC9100NR1によるデジタル処理用のアナログ信号変換。
オーディオ処理
MWE6IC9100NR1によるオーディオ信号の増幅と処理。
この製品に関するFAQはありません。
エンジニアリング参考データ: MWE6IC9100NR1 — 比較、設計ガイダンス、コンプライアンス情報。
コンプライアンス情報
RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
鉛フリー
Unknown
ハロゲンフリー
Unknown
紛争鉱物
Unknown
Compliance data not present in the verified web data; confirm with NXP product page before design-in.
データ検証日: 2026-10-15
— データはXAIPARTの部品エンジニアリングチームによって検証・管理されています
関連部品&用語
NXP Semiconductors
Freescale Semiconductor
MWE6IC9100NR1
MW6IC9100N
MW7IC18100NR1
MD7IC2050GNR1
MWE6IC9080GNR1
RF Power Amplifier
RF PA
LDMOS
GSM
EDGE
TO-270 WB-14
Gull-wing package
Base station
Cellular repeater
869 MHz to 960 MHz
100 W output
26 V supply
33.5 dB gain
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