MWE6IC9100NR1 - 100W 26V GSM/EDGE RF LDMOS Amplifier | NXP
MPN: MWE6IC9100NR1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $181.5 | $181.50 |
| 10 | $172.43 | $1,724.30 |
| 100 | $154.28 | $15,428.00 |
| 500 | $136.13 | $68,065.00 |
| 1,000 | $118.5 | $118,500.00 |
MWE6IC9100NR1 Overview
An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.
Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.
Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.
Drop-in alternatives for MWE6IC9100NR1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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Request AlternativesMWE6IC9100NR1 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 869 MHz to 960 MHz |
| RF Type / Application | GSM, EDGE |
| Typical Output Power | 100 W (Pout, CW) |
| Operating Supply Voltage | 26 V (Vdd), 28 V supply rating |
| Maximum Supply Voltage | 32 V (rated) |
| Power Gain | 33.5 dB at 960 MHz |
| Package / Case | TO-270 WB-14 (gull-wing, flat leads) |
| Mounting Type | Surface Mount |
| Packaging | Tape and Reel (TR) |
| Lead Configuration | Flat leads, gull-wing |
MWE6IC9100NR1 to-270 wb-14 (gull-wing, flat leads) Pin Configuration Guide
Pin configuration for MWE6IC9100NR1 (to-270 wb-14 (gull-wing, flat leads) package). This analog component features input, output, and power supply pins. Refer to the manufacturer datasheet for offset null, compensation, and enable pin configurations. Ideal for signal conditioning and amplifier circuits.
No detailed pinout data available for MWE6IC9100NR1.
Refer to the datasheet for full pin configuration.
Typical Applications
MWE6IC9100NR1 is suitable for 3 applications: Signal Conditioning, Data Acquisition, Audio Processing.
Signal Conditioning
Amplifying and filtering sensor signals using MWE6IC9100NR1.
Data Acquisition
Converting analog signals for digital processing with MWE6IC9100NR1.
Audio Processing
Audio signal amplification and processing with MWE6IC9100NR1.
No FAQ available for this product.
Engineering reference data for MWE6IC9100NR1 — comparison, design guidance, and compliance information.
Compliance Information
Compliance data not present in the verified web data; confirm with NXP product page before design-in.
