NXP Semiconductors
MWE6IC9100NR1 - 100W 26V GSM/EDGE RF LDMOS Amplifier | NXP
料号： MWE6IC9100NR1 ✓ 量产中
有现货
1-3 个工作日内发货
26 V (Vdd), 28 V supply rating Vdss
TO-270 WB-14 (gull-wing, flat leads) Package
869 MHz to 960 MHz Speed
低至 $118.5
USD / 件
最小起订量： 1 |
价格更新于： 2026-10-15
批量定价
| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $181.5 | $181.50 |
| 10 | $172.43 | $1,724.30 |
| 100 | $154.28 | $15,428.00 |
| 500 | $136.13 | $68,065.00 |
| 1,000 | $118.5 | $118,500.00 |
ℹ️ 所有价格均以 USD 计价
MWE6IC9100NR1 概述
The NXP MWE6IC9100NR1 is a 100 W wideband integrated RF power amplifier engineered for GSM and EDGE base-station applications from 869 MHz to 960 MHz, housed in a TO-270 WB-14 (gull-wing) surface-mount package. This multi-stage LDMOS (Laterally Diffused Metal-Oxide Semiconductor) power IC integrates on-chip input and output matching, a gain of 33.5 dB at 960 MHz, and operates from a 26 V DC supply with a 28 V absolute supply rating. The part was originally introduced by Freescale Semiconductor and is now sold under NXP following the 2015 acquisition, and remains in active production as a building block for cellular infrastructure.
An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.
Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.
Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.
An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.
Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.
Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.
MWE6IC9100NR1 最大额定值与电气特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 869 MHz to 960 MHz |
| RF Type / Application | GSM, EDGE |
| Typical Output Power | 100 W (Pout, CW) |
| 工作电源电压 | 26 V (Vdd), 28 V supply rating |
| Maximum Supply Voltage | 32 V (rated) |
| Power Gain | 33.5 dB at 960 MHz |
| 封装 / 外壳 | TO-270 WB-14 (gull-wing, flat leads) |
| 安装类型 | Surface Mount |
| Packaging | Tape and Reel (TR) |
| Lead Configuration | Flat leads, gull-wing |
MWE6IC9100NR1 to-270 wb-14 (gull-wing, flat leads) 引脚配置指南
MWE6IC9100NR1（to-270 wb-14 (gull-wing, flat leads) 封装）的引脚配置。 该模拟元件具有输入、输出和电源引脚。请参阅制造商数据手册以了解失调调零、补偿和使能引脚配置。适用于信号调理和放大器电路。
暂无详细引脚数据： MWE6IC9100NR1.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MWE6IC9100NR1 适用于 3 应用s: 信号调理, 数据采集, 音频处理.
信号调理
使用 MWE6IC9100NR1 放大和滤波传感器信号。
数据采集
使用 MWE6IC9100NR1 将模拟信号转换为数字信号进行处理。
音频处理
使用 MWE6IC9100NR1 进行音频信号放大和处理。
该产品暂无常见问题。
工程参考数据： MWE6IC9100NR1 ——对比、设计指导和合规信息。
合规信息
RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
无铅
Unknown
无卤
Unknown
冲突矿物
Unknown
Compliance data not present in the verified web data; confirm with NXP product page before design-in.
数据核验日期： 2026-10-15
——数据由 XAIPART 元器件工程团队核验和整理
相关元器件 & 术语
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RF Power Amplifier
RF PA
LDMOS
GSM
EDGE
TO-270 WB-14
Gull-wing package
Base station
Cellular repeater
869 MHz to 960 MHz
100 W output
26 V supply
33.5 dB gain
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