NXP Semiconductors
MWE6IC9100NR1 - 100W 26V GSM/EDGE RF LDMOS Amplifier | NXP
부품 번호: MWE6IC9100NR1 ✓ 활성
재고 있음
영업일 기준 1~3일 내 발송
26 V (Vdd), 28 V supply rating Vdss
TO-270 WB-14 (gull-wing, flat leads) Package
869 MHz to 960 MHz Speed
시작가 $118.5
USD / 개
MOQ: 1 |
가격 업데이트: 2026-10-15
볼륨 가격
| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $181.5 | $181.50 |
| 10 | $172.43 | $1,724.30 |
| 100 | $154.28 | $15,428.00 |
| 500 | $136.13 | $68,065.00 |
| 1,000 | $118.5 | $118,500.00 |
ℹ️ 모든 가격은 USD 기준입니다
MWE6IC9100NR1 개요
The NXP MWE6IC9100NR1 is a 100 W wideband integrated RF power amplifier engineered for GSM and EDGE base-station applications from 869 MHz to 960 MHz, housed in a TO-270 WB-14 (gull-wing) surface-mount package. This multi-stage LDMOS (Laterally Diffused Metal-Oxide Semiconductor) power IC integrates on-chip input and output matching, a gain of 33.5 dB at 960 MHz, and operates from a 26 V DC supply with a 28 V absolute supply rating. The part was originally introduced by Freescale Semiconductor and is now sold under NXP following the 2015 acquisition, and remains in active production as a building block for cellular infrastructure.
An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.
Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.
Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.
An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.
Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.
Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.
드롭인 대체품: MWE6IC9100NR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
이 제품에는 사용 가능한 드롭인 대체품이 없습니다.
대체품 요청MWE6IC9100NR1 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 869 MHz to 960 MHz |
| RF Type / Application | GSM, EDGE |
| Typical Output Power | 100 W (Pout, CW) |
| 동작 공급 전압 | 26 V (Vdd), 28 V supply rating |
| Maximum Supply Voltage | 32 V (rated) |
| Power Gain | 33.5 dB at 960 MHz |
| 패키지 / 케이스 | TO-270 WB-14 (gull-wing, flat leads) |
| 실장 유형 | Surface Mount |
| Packaging | Tape and Reel (TR) |
| Lead Configuration | Flat leads, gull-wing |
MWE6IC9100NR1 to-270 wb-14 (gull-wing, flat leads) 핀 구성 가이드
MWE6IC9100NR1(to-270 wb-14 (gull-wing, flat leads) 패키지)의 핀 구성입니다. 이 아날로그 부품에는 입력, 출력, 전원 공급 핀이 있습니다. 오프셋 널, 보상, 인에이블 핀 구성은 제조사 데이터시트를 참조하십시오. 신호 컨디셔닝 및 증폭기 회로에 이상적입니다.
다음에 대한 상세 핀아웃 데이터 없음: MWE6IC9100NR1.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
MWE6IC9100NR1 적합 용도: 3 애플리케이션s: 신호 컨디셔닝, 데이터 수집, 오디오 처리.
신호 컨디셔닝
MWE6IC9100NR1을(를) 사용한 센서 신호 증폭 및 필터링.
데이터 수집
MWE6IC9100NR1을(를) 사용한 디지털 처리를 위한 아날로그 신호 변환.
오디오 처리
MWE6IC9100NR1을(를) 사용한 오디오 신호 증폭 및 처리.
이 제품에 대한 FAQ가 없습니다.
엔지니어링 참조 데이터: MWE6IC9100NR1 — 비교, 설계 지침 및 규정 준수 정보.
규정 준수 정보
RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
무연
Unknown
무할로겐
Unknown
분쟁 광물
Unknown
Compliance data not present in the verified web data; confirm with NXP product page before design-in.
데이터 검증일: 2026-10-15
— XAIPART 부품 엔지니어링 팀이 검증하고 관리한 데이터
관련 부품 & 용어
NXP Semiconductors
Freescale Semiconductor
MWE6IC9100NR1
MW6IC9100N
MW7IC18100NR1
MD7IC2050GNR1
MWE6IC9080GNR1
RF Power Amplifier
RF PA
LDMOS
GSM
EDGE
TO-270 WB-14
Gull-wing package
Base station
Cellular repeater
869 MHz to 960 MHz
100 W output
26 V supply
33.5 dB gain
1 / 1