NT5AD512M16C4-HRI - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
部品番号: NT5AD512M16C4-HRI ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $78.75 | $78.75 |
| 10 | $56.875 | $568.75 |
| 100 | $50.3125 | $5,031.25 |
| 500 | $48.125 | $24,062.50 |
| 1,000 | $45.9375 | $45,937.50 |
NT5AD512M16C4-HRI 概要
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It features a prefetch buffer of 8n, allowing high-speed data access while maintaining lower operating voltages (1.2V vs 1.5V for DDR3), which reduces power consumption and heat generation. DDR4 is the industry standard for modern computing, networking, and embedded systems, offering improved reliability and performance over previous generations.
Key features of the NT5AD512M16C4-HRI include an industrial temperature grade (0°C to +95°C), auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (ODT), ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance signal integrity, data reliability, and system robustness, particularly in demanding industrial environments.
The device supports data rates up to 3200 MT/s (per the 'H' speed grade), with a CAS latency of 22 cycles. It utilizes a 16n prefetch architecture and includes on-die ECC for improved data integrity. The 96-ball TFBGA package measures 9mm x 13mm with a 0.8mm ball pitch, offering excellent thermal and electrical performance for high-speed operation.
Typical applications include industrial controllers, embedded computing modules, networking equipment, and data storage systems. The industrial temperature range and robust feature set make it ideal for applications requiring reliable operation in harsh environments, such as factory automation, transportation, and outdoor infrastructure.
When designing with this DDR4 device, ensure proper termination and layout practices are followed to maintain signal integrity at high speeds. The ZQ calibration pin requires a 240-ohm resistor to ground, and the VTT and VREF supplies must be properly decoupled. Refer to the Nanya datasheet for detailed PCB layout guidelines and timing parameters.
ドロップイン代替品: NT5AD512M16C4-HRI — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: NT5AD512M16C4-HRI （同一形状・フットプリント） — 相違点: Data Rate, Package.
クイック比較ツール — 並列比較する代替部品を選択:
NT5AD512M16C4-JRI
✓ 在庫あり
$75.58 / 個
データシートを見る →NT5AD512M16C4-HR
✓ 在庫あり
$43.1 / 個
データシートを見る →NT5AD512M16C4-JR
✓ 在庫あり
$73.75 / 個
データシートを見る →MT40A512M16TB-062E
✓ 在庫あり
$60 / 個
データシートを見る →K4A8G165WC-BCWE
✓ 在庫あり
$38 / 個
データシートを見る →H5AN8G6NCJR-VKC
✓ 在庫あり
$60 / 個
データシートを見る →NT5AD512M16C4-HRI 最大定格＆電気的特性
| メモリタイプ | DDR4 SDRAM |
| メモリ構成 | 512M x 16 |
| Density | 8 Gbit |
| 電源電圧 | 1.2 V |
| パッケージ | 96-pin TFBGA |
| Temperature Grade | Industrial (0°C to +95°C) |
| データレート | 3200 MT/s (H speed grade) |
| CASレイテンシ | 22 |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
NT5AD512M16C4-HRI ピン構成
| ピン A1 | VDD — Power supply (1.2V) |
| ピン A2 | DQ0 — Data input/output 0 |
| ピン A3 | DQ1 — Data input/output 1 |
| ピン A4 | VSS — Ground |
| ピン A5 | DQ2 — Data input/output 2 |
| ピン A6 | DQ3 — Data input/output 3 |
| ピン A7 | VDD — Power supply (1.2V) |
| ピン A8 | DQ4 — Data input/output 4 |
| ピン A9 | DQ5 — Data input/output 5 |
| ピン A10 | VSS — Ground |
| ピン A11 | DQ6 — Data input/output 6 |
| ピン A12 | DQ7 — Data input/output 7 |
| ピン B1 | VDD — Power supply (1.2V) |
| ピン B2 | DQ8 — Data input/output 8 |
| ピン B3 | DQ9 — Data input/output 9 |
| ピン B4 | VSS — Ground |
| ピン B5 | DQ10 — Data input/output 10 |
| ピン B6 | DQ11 — Data input/output 11 |
| ピン B7 | VDD — Power supply (1.2V) |
| ピン B8 | DQ12 — Data input/output 12 |
| ピン B9 | DQ13 — Data input/output 13 |
| ピン B10 | VSS — Ground |
| ピン B11 | DQ14 — Data input/output 14 |
| ピン B12 | DQ15 — Data input/output 15 |
| ピン C1 | VDD — Power supply (1.2V) |
| ピン C2 | DQS0 — Data strobe 0 |
| ピン C3 | DQS0# — Data strobe 0 complement |
| ピン C4 | VSS — Ground |
| ピン C5 | DQS1 — Data strobe 1 |
| ピン C6 | DQS1# — Data strobe 1 complement |
| ピン C7 | VDD — Power supply (1.2V) |
| ピン C8 | DQS2 — Data strobe 2 |
| ピン C9 | DQS2# — Data strobe 2 complement |
| ピン C10 | VSS — Ground |
| ピン C11 | DQS3 — Data strobe 3 |
| ピン C12 | DQS3# — Data strobe 3 complement |
| ピン D1 | VDD — Power supply (1.2V) |
| ピン D2 | DM0 — Data mask 0 |
| ピン D3 | DM1 — Data mask 1 |
| ピン D4 | VSS — Ground |
| ピン D5 | DM2 — Data mask 2 |
| ピン D6 | DM3 — Data mask 3 |
| ピン D7 | VDD — Power supply (1.2V) |
| ピン D8 | A0 — Address input 0 |
| ピン D9 | A1 — Address input 1 |
| ピン D10 | VSS — Ground |
| ピン D11 | A2 — Address input 2 |
| ピン D12 | A3 — Address input 3 |
| ピン E1 | VDD — Power supply (1.2V) |
| ピン E2 | A4 — Address input 4 |
| ピン E3 | A5 — Address input 5 |
| ピン E4 | VSS — Ground |
| ピン E5 | A6 — Address input 6 |
| ピン E6 | A7 — Address input 7 |
| ピン E7 | VDD — Power supply (1.2V) |
| ピン E8 | A8 — Address input 8 |
| ピン E9 | A9 — Address input 9 |
| ピン E10 | VSS — Ground |
| ピン E11 | A10/AP — Address input 10 / Auto precharge |
| ピン E12 | A11 — Address input 11 |
| ピン F1 | VDD — Power supply (1.2V) |
| ピン F2 | A12 — Address input 12 |
| ピン F3 | A13 — Address input 13 |
| ピン F4 | VSS — Ground |
| ピン F5 | A14 — Address input 14 |
| ピン F6 | A15 — Address input 15 |
| ピン F7 | VDD — Power supply (1.2V) |
| ピン F8 | BA0 — Bank address 0 |
| ピン F9 | BA1 — Bank address 1 |
| ピン F10 | VSS — Ground |
| ピン F11 | BA2 — Bank address 2 |
| ピン F12 | BG0 — Bank group 0 |
| ピン G1 | VDD — Power supply (1.2V) |
| ピン G2 | BG1 — Bank group 1 |
| ピン G3 | CK — Clock input |
| ピン G4 | VSS — Ground |
| ピン G5 | CK# — Clock input complement |
| ピン G6 | CKE — Clock enable |
| ピン G7 | VDD — Power supply (1.2V) |
| ピン G8 | CS# — Chip select |
| ピン G9 | RAS# — Row address strobe |
| ピン G10 | VSS — Ground |
| ピン G11 | CAS# — Column address strobe |
| ピン G12 | WE# — Write enable |
| ピン H1 | VDD — Power supply (1.2V) |
| ピン H2 | RESET# — Asynchronous reset |
| ピン H3 | ODT — On-die termination |
| ピン H4 | VSS — Ground |
| ピン H5 | ZQ — ZQ calibration |
| ピン H6 | VDDQ — Power supply for output (1.2V) |
| ピン H7 | VSSQ — Ground for output |
| ピン H8 | VDDQ — Power supply for output (1.2V) |
| ピン H9 | VSSQ — Ground for output |
| ピン H10 | VDDQ — Power supply for output (1.2V) |
| ピン H11 | VSSQ — Ground for output |
| ピン H12 | VDDQ — Power supply for output (1.2V) |
| ピン J1 | VDDQ — Power supply for output (1.2V) |
| ピン J2 | VSSQ — Ground for output |
| ピン J3 | VDDQ — Power supply for output (1.2V) |
| ピン J4 | VSSQ — Ground for output |
| ピン J5 | VDDQ — Power supply for output (1.2V) |
| ピン J6 | VSSQ — Ground for output |
| ピン J7 | VDDQ — Power supply for output (1.2V) |
| ピン J8 | VSSQ — Ground for output |
| ピン J9 | VDDQ — Power supply for output (1.2V) |
| ピン J10 | VSSQ — Ground for output |
| ピン J11 | VDDQ — Power supply for output (1.2V) |
| ピン J12 | VSSQ — Ground for output |
主な用途
NT5AD512M16C4-HRI の用途: 6 件s: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Data Storage Systems, Automotive Infotainment, Test and Measurement Equipment.
Industrial Controllers
The NT5AD512M16C4-HRI is ideal for industrial controllers that require reliable operation in harsh environments. Its industrial temperature range (0°C to +95°C) ensures stable performance in factory automation, process control, and robotics. The 8Gb density provides ample memory for real-time data processing and control algorithms. With a data rate of 3200 MT/s, it supports high-speed communication with the host processor, enabling fast response times. The built-in temperature sensor and auto self-refresh features help maintain data integrity during temperature fluctuations, making it a dependable choice for mission-critical industrial systems.
おすすめ
Embedded Computing Modules
For embedded computing modules such as single-board computers and edge computing devices, the NT5AD512M16C4-HRI provides high-density memory in a compact 96-pin TFBGA package. Its 1.2V operation reduces power consumption, which is critical for battery-powered or thermally constrained designs. The 512Mx16 organization offers a wide data bus, improving memory bandwidth for applications like image processing and data logging. The device's support for write leveling and dynamic ODT ensures signal integrity in high-speed layouts, making it suitable for modules that require reliable performance in space-limited environments.
おすすめ
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the NT5AD512M16C4-HRI offers the high bandwidth and low latency required for packet processing and forwarding. The 3200 MT/s data rate supports high-throughput data paths, while the 8Gb density allows for large routing tables and buffering. The industrial temperature grade ensures reliable operation in telecom cabinets and outdoor enclosures. Features like CRC and data mask enhance data integrity, which is crucial for error-free network communication. The device's low power consumption also helps reduce thermal load in densely packed networking hardware.
おすすめ
Data Storage Systems
The NT5AD512M16C4-HRI is well-suited for data storage systems, including SSDs, RAID controllers, and network-attached storage (NAS). Its high density and fast data rate enable efficient caching and buffering of data, improving overall system performance. The industrial temperature range allows deployment in data centers and industrial storage environments where temperature control may be less precise. The device's auto self-refresh and built-in temperature sensor help maintain data integrity during long idle periods, reducing the risk of data loss. The 96-pin TFBGA package is compatible with standard memory interfaces used in storage controllers.
おすすめ
Automotive Infotainment
Although the NT5AD512M16C4-HRI has an industrial temperature grade, it can be used in automotive infotainment systems that operate within 0°C to +95°C. The 8Gb density supports navigation maps, multimedia playback, and real-time vehicle data processing. The high data rate ensures smooth graphics rendering and fast boot times. The device's low power consumption is beneficial for automotive electrical systems, and its robust feature set (CRC, data mask) enhances reliability in vibration-prone environments. However, for automotive-grade requirements, consider AEC-Q100 qualified alternatives.
おすすめ
Test and Measurement Equipment
In test and measurement equipment such as oscilloscopes, logic analyzers, and signal generators, the NT5AD512M16C4-HRI provides high-speed data buffering and storage. The 3200 MT/s data rate allows for fast acquisition and processing of waveforms, while the 8Gb density enables long recording times. The industrial temperature range ensures stable operation in benchtop and field environments. Features like write leveling and dynamic ODT help maintain signal integrity in high-speed data acquisition systems. The device's low power consumption is advantageous for portable test instruments.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: NT5AD512M16C4-HRI — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | NT5AD512M16C4-JRI | NT5AD512M16C4-HR | MT40A512M16TB-062E | K4A8G165WC-BCWE |
|---|---|---|---|---|---|
| Package | 96-pin TFBGA | 96-pin TFBGA | 96-pin TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 3200 MT/s | 3200 MT/s | 2666 MT/s | 3200 MT/s | 3200 MT/s |
主な差別化要因
- Industrial temperature grade （vs NT5AD512M16C4-HR)
- Higher speed grade （vs NT5AD512M16C4-HR)
- Same-brand drop-in compatibility （vs MT40A512M16TB-062E)
設計ノート
For DDR4 layouts, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command signals. Use a 4-layer or more PCB with solid ground and power planes. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Ensure the ZQ pin has a 240-ohm resistor to ground with 1% tolerance. Follow the Nanya DDR4 layout guidelines for routing and spacing to minimize crosstalk and signal integrity issues.
The NT5AD512M16C4-HRI requires a 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with proper filtering to provide clean power. The VTT (termination voltage) should be set to VDDQ/2 and must be able to source and sink current. VREFCA and VREFDQ should be decoupled with 0.1uF capacitors. Ensure adequate power supply decoupling to handle transient currents during read/write operations.
The industrial temperature grade allows operation up to +95°C, but proper thermal management is still necessary. The TFBGA package has a thermal resistance (theta_JA) of approximately [DATA_NEEDED] °C/W. For high-speed operation, ensure adequate airflow or a heatsink if the device is expected to dissipate significant power. Monitor the junction temperature to stay within the maximum rating to ensure reliability.
コンプライアンス情報
RoHS compliance is indicated by the 'I' suffix in the part number, which typically denotes industrial temperature grade and lead-free finish. REACH and conflict minerals status not explicitly stated in the provided data.
