NT5AD512M16C4-HRI - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
Référence : NT5AD512M16C4-HRI ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $78.75 | $78,75 |
| 10 | $56.875 | $568,75 |
| 100 | $50.3125 | $5 031,25 |
| 500 | $48.125 | $24 062,50 |
| 1 000 | $45.9375 | $45 937,50 |
NT5AD512M16C4-HRI Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It features a prefetch buffer of 8n, allowing high-speed data access while maintaining lower operating voltages (1.2V vs 1.5V for DDR3), which reduces power consumption and heat generation. DDR4 is the industry standard for modern computing, networking, and embedded systems, offering improved reliability and performance over previous generations.
Key features of the NT5AD512M16C4-HRI include an industrial temperature grade (0°C to +95°C), auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (ODT), ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance signal integrity, data reliability, and system robustness, particularly in demanding industrial environments.
The device supports data rates up to 3200 MT/s (per the 'H' speed grade), with a CAS latency of 22 cycles. It utilizes a 16n prefetch architecture and includes on-die ECC for improved data integrity. The 96-ball TFBGA package measures 9mm x 13mm with a 0.8mm ball pitch, offering excellent thermal and electrical performance for high-speed operation.
Typical applications include industrial controllers, embedded computing modules, networking equipment, and data storage systems. The industrial temperature range and robust feature set make it ideal for applications requiring reliable operation in harsh environments, such as factory automation, transportation, and outdoor infrastructure.
When designing with this DDR4 device, ensure proper termination and layout practices are followed to maintain signal integrity at high speeds. The ZQ calibration pin requires a 240-ohm resistor to ground, and the VTT and VREF supplies must be properly decoupled. Refer to the Nanya datasheet for detailed PCB layout guidelines and timing parameters.
Alternatives de remplacement direct pour NT5AD512M16C4-HRI — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5AD512M16C4-HRI (même facteur de forme et même empreinte) — différant par Data Rate, Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5AD512M16C4-JRI
✓ En stock
$75.58 / unité
Voir la fiche technique →NT5AD512M16C4-HR
✓ En stock
$43.1 / unité
Voir la fiche technique →NT5AD512M16C4-JR
✓ En stock
$73.75 / unité
Voir la fiche technique →MT40A512M16TB-062E
✓ En stock
$60 / unité
Voir la fiche technique →K4A8G165WC-BCWE
✓ En stock
$38 / unité
Voir la fiche technique →H5AN8G6NCJR-VKC
✓ En stock
$60 / unité
Voir la fiche technique →NT5AD512M16C4-HRI Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Organisation de la mémoire | 512M x 16 |
| Density | 8 Gbit |
| Tension d'alimentation | 1.2 V |
| Boîtier | 96-pin TFBGA |
| Temperature Grade | Industrial (0°C to +95°C) |
| Débit de données | 3200 MT/s (H speed grade) |
| Latence CAS | 22 |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Configuration des broches de NT5AD512M16C4-HRI
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply (1.2V) |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VDD — Power supply (1.2V) |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VSS — Ground |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VDD — Power supply (1.2V) |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VSS — Ground |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDD — Power supply (1.2V) |
| Broche C2 | DQS0 — Data strobe 0 |
| Broche C3 | DQS0# — Data strobe 0 complement |
| Broche C4 | VSS — Ground |
| Broche C5 | DQS1 — Data strobe 1 |
| Broche C6 | DQS1# — Data strobe 1 complement |
| Broche C7 | VDD — Power supply (1.2V) |
| Broche C8 | DQS2 — Data strobe 2 |
| Broche C9 | DQS2# — Data strobe 2 complement |
| Broche C10 | VSS — Ground |
| Broche C11 | DQS3 — Data strobe 3 |
| Broche C12 | DQS3# — Data strobe 3 complement |
| Broche D1 | VDD — Power supply (1.2V) |
| Broche D2 | DM0 — Data mask 0 |
| Broche D3 | DM1 — Data mask 1 |
| Broche D4 | VSS — Ground |
| Broche D5 | DM2 — Data mask 2 |
| Broche D6 | DM3 — Data mask 3 |
| Broche D7 | VDD — Power supply (1.2V) |
| Broche D8 | A0 — Address input 0 |
| Broche D9 | A1 — Address input 1 |
| Broche D10 | VSS — Ground |
| Broche D11 | A2 — Address input 2 |
| Broche D12 | A3 — Address input 3 |
| Broche E1 | VDD — Power supply (1.2V) |
| Broche E2 | A4 — Address input 4 |
| Broche E3 | A5 — Address input 5 |
| Broche E4 | VSS — Ground |
| Broche E5 | A6 — Address input 6 |
| Broche E6 | A7 — Address input 7 |
| Broche E7 | VDD — Power supply (1.2V) |
| Broche E8 | A8 — Address input 8 |
| Broche E9 | A9 — Address input 9 |
| Broche E10 | VSS — Ground |
| Broche E11 | A10/AP — Address input 10 / Auto precharge |
| Broche E12 | A11 — Address input 11 |
| Broche F1 | VDD — Power supply (1.2V) |
| Broche F2 | A12 — Address input 12 |
| Broche F3 | A13 — Address input 13 |
| Broche F4 | VSS — Ground |
| Broche F5 | A14 — Address input 14 |
| Broche F6 | A15 — Address input 15 |
| Broche F7 | VDD — Power supply (1.2V) |
| Broche F8 | BA0 — Bank address 0 |
| Broche F9 | BA1 — Bank address 1 |
| Broche F10 | VSS — Ground |
| Broche F11 | BA2 — Bank address 2 |
| Broche F12 | BG0 — Bank group 0 |
| Broche G1 | VDD — Power supply (1.2V) |
| Broche G2 | BG1 — Bank group 1 |
| Broche G3 | CK — Clock input |
| Broche G4 | VSS — Ground |
| Broche G5 | CK# — Clock input complement |
| Broche G6 | CKE — Clock enable |
| Broche G7 | VDD — Power supply (1.2V) |
| Broche G8 | CS# — Chip select |
| Broche G9 | RAS# — Row address strobe |
| Broche G10 | VSS — Ground |
| Broche G11 | CAS# — Column address strobe |
| Broche G12 | WE# — Write enable |
| Broche H1 | VDD — Power supply (1.2V) |
| Broche H2 | RESET# — Asynchronous reset |
| Broche H3 | ODT — On-die termination |
| Broche H4 | VSS — Ground |
| Broche H5 | ZQ — ZQ calibration |
| Broche H6 | VDDQ — Power supply for output (1.2V) |
| Broche H7 | VSSQ — Ground for output |
| Broche H8 | VDDQ — Power supply for output (1.2V) |
| Broche H9 | VSSQ — Ground for output |
| Broche H10 | VDDQ — Power supply for output (1.2V) |
| Broche H11 | VSSQ — Ground for output |
| Broche H12 | VDDQ — Power supply for output (1.2V) |
| Broche J1 | VDDQ — Power supply for output (1.2V) |
| Broche J2 | VSSQ — Ground for output |
| Broche J3 | VDDQ — Power supply for output (1.2V) |
| Broche J4 | VSSQ — Ground for output |
| Broche J5 | VDDQ — Power supply for output (1.2V) |
| Broche J6 | VSSQ — Ground for output |
| Broche J7 | VDDQ — Power supply for output (1.2V) |
| Broche J8 | VSSQ — Ground for output |
| Broche J9 | VDDQ — Power supply for output (1.2V) |
| Broche J10 | VSSQ — Ground for output |
| Broche J11 | VDDQ — Power supply for output (1.2V) |
| Broche J12 | VSSQ — Ground for output |
Applications typiques
NT5AD512M16C4-HRI convient pour 6 applications: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Data Storage Systems, Automotive Infotainment, Test and Measurement Equipment.
Industrial Controllers
The NT5AD512M16C4-HRI is ideal for industrial controllers that require reliable operation in harsh environments. Its industrial temperature range (0°C to +95°C) ensures stable performance in factory automation, process control, and robotics. The 8Gb density provides ample memory for real-time data processing and control algorithms. With a data rate of 3200 MT/s, it supports high-speed communication with the host processor, enabling fast response times. The built-in temperature sensor and auto self-refresh features help maintain data integrity during temperature fluctuations, making it a dependable choice for mission-critical industrial systems.
Recommandé
Embedded Computing Modules
For embedded computing modules such as single-board computers and edge computing devices, the NT5AD512M16C4-HRI provides high-density memory in a compact 96-pin TFBGA package. Its 1.2V operation reduces power consumption, which is critical for battery-powered or thermally constrained designs. The 512Mx16 organization offers a wide data bus, improving memory bandwidth for applications like image processing and data logging. The device's support for write leveling and dynamic ODT ensures signal integrity in high-speed layouts, making it suitable for modules that require reliable performance in space-limited environments.
Recommandé
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the NT5AD512M16C4-HRI offers the high bandwidth and low latency required for packet processing and forwarding. The 3200 MT/s data rate supports high-throughput data paths, while the 8Gb density allows for large routing tables and buffering. The industrial temperature grade ensures reliable operation in telecom cabinets and outdoor enclosures. Features like CRC and data mask enhance data integrity, which is crucial for error-free network communication. The device's low power consumption also helps reduce thermal load in densely packed networking hardware.
Recommandé
Data Storage Systems
The NT5AD512M16C4-HRI is well-suited for data storage systems, including SSDs, RAID controllers, and network-attached storage (NAS). Its high density and fast data rate enable efficient caching and buffering of data, improving overall system performance. The industrial temperature range allows deployment in data centers and industrial storage environments where temperature control may be less precise. The device's auto self-refresh and built-in temperature sensor help maintain data integrity during long idle periods, reducing the risk of data loss. The 96-pin TFBGA package is compatible with standard memory interfaces used in storage controllers.
Recommandé
Automotive Infotainment
Although the NT5AD512M16C4-HRI has an industrial temperature grade, it can be used in automotive infotainment systems that operate within 0°C to +95°C. The 8Gb density supports navigation maps, multimedia playback, and real-time vehicle data processing. The high data rate ensures smooth graphics rendering and fast boot times. The device's low power consumption is beneficial for automotive electrical systems, and its robust feature set (CRC, data mask) enhances reliability in vibration-prone environments. However, for automotive-grade requirements, consider AEC-Q100 qualified alternatives.
Recommandé
Test and Measurement Equipment
In test and measurement equipment such as oscilloscopes, logic analyzers, and signal generators, the NT5AD512M16C4-HRI provides high-speed data buffering and storage. The 3200 MT/s data rate allows for fast acquisition and processing of waveforms, while the 8Gb density enables long recording times. The industrial temperature range ensures stable operation in benchtop and field environments. Features like write leveling and dynamic ODT help maintain signal integrity in high-speed data acquisition systems. The device's low power consumption is advantageous for portable test instruments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5AD512M16C4-HRI — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5AD512M16C4-JRI | NT5AD512M16C4-HR | MT40A512M16TB-062E | K4A8G165WC-BCWE |
|---|---|---|---|---|---|
| Package | 96-pin TFBGA | 96-pin TFBGA | 96-pin TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 3200 MT/s | 3200 MT/s | 2666 MT/s | 3200 MT/s | 3200 MT/s |
Principaux différenciateurs
- Industrial temperature grade (vs NT5AD512M16C4-HR)
- Higher speed grade (vs NT5AD512M16C4-HR)
- Same-brand drop-in compatibility (vs MT40A512M16TB-062E)
Notes de conception
For DDR4 layouts, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command signals. Use a 4-layer or more PCB with solid ground and power planes. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Ensure the ZQ pin has a 240-ohm resistor to ground with 1% tolerance. Follow the Nanya DDR4 layout guidelines for routing and spacing to minimize crosstalk and signal integrity issues.
The NT5AD512M16C4-HRI requires a 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with proper filtering to provide clean power. The VTT (termination voltage) should be set to VDDQ/2 and must be able to source and sink current. VREFCA and VREFDQ should be decoupled with 0.1uF capacitors. Ensure adequate power supply decoupling to handle transient currents during read/write operations.
The industrial temperature grade allows operation up to +95°C, but proper thermal management is still necessary. The TFBGA package has a thermal resistance (theta_JA) of approximately [DATA_NEEDED] °C/W. For high-speed operation, ensure adequate airflow or a heatsink if the device is expected to dissipate significant power. Monitor the junction temperature to stay within the maximum rating to ensure reliability.
Informations de conformité
RoHS compliance is indicated by the 'I' suffix in the part number, which typically denotes industrial temperature grade and lead-free finish. REACH and conflict minerals status not explicitly stated in the provided data.
