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Nanya Technology

NT5AD512M16C4-HRI - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology

Артикул: NT5AD512M16C4-HRI ✓ Активен
В наличии Отправка в течение 1–3 рабочих дней
1.2 V Vdss 96-pin TFBGA Package DDR4 SDRAM Memory
От $45.9375 USD / шт.
MOQ: 1 |
Цена обновлена: 2026-10-13
Оптовые цены
Кол-во Цена за ед. Итого
1 $78.75 $78,75
10 $56.875 $568,75
100 $50.3125 $5.031,25
500 $48.125 $24.062,50
1.000 $45.9375 $45.937,50
ℹ️ Все цены указаны в USD

NT5AD512M16C4-HRI Обзор

The Nanya Technology NT5AD512M16C4-HRI is a high-performance DDR4 SDRAM device organized as 512M x 16, providing a total density of 8 Gigabits. It operates from a 1.2V power supply and is housed in a 96-pin TFBGA package, making it suitable for space-constrained applications requiring high memory bandwidth and low power consumption.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It features a prefetch buffer of 8n, allowing high-speed data access while maintaining lower operating voltages (1.2V vs 1.5V for DDR3), which reduces power consumption and heat generation. DDR4 is the industry standard for modern computing, networking, and embedded systems, offering improved reliability and performance over previous generations.

Key features of the NT5AD512M16C4-HRI include an industrial temperature grade (0°C to +95°C), auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (ODT), ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance signal integrity, data reliability, and system robustness, particularly in demanding industrial environments.

The device supports data rates up to 3200 MT/s (per the 'H' speed grade), with a CAS latency of 22 cycles. It utilizes a 16n prefetch architecture and includes on-die ECC for improved data integrity. The 96-ball TFBGA package measures 9mm x 13mm with a 0.8mm ball pitch, offering excellent thermal and electrical performance for high-speed operation.

Typical applications include industrial controllers, embedded computing modules, networking equipment, and data storage systems. The industrial temperature range and robust feature set make it ideal for applications requiring reliable operation in harsh environments, such as factory automation, transportation, and outdoor infrastructure.

When designing with this DDR4 device, ensure proper termination and layout practices are followed to maintain signal integrity at high speeds. The ZQ calibration pin requires a 240-ohm resistor to ground, and the VTT and VREF supplies must be properly decoupled. Refer to the Nanya datasheet for detailed PCB layout guidelines and timing parameters.

Аналоги без доработки для NT5AD512M16C4-HRI — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.

Варианты в этой серии

Модели той же серии, совместимые без доработки с NT5AD512M16C4-HRI (тот же форм-фактор и посадочное место) — отличается по Data Rate, Package.

Nanya Technology
Data Rate: 1.333 GHz (DDR4-2666)
Package: FBGA-96 (TFBGA)
Сравнить с NT5AD512M16C4-HRI →

Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:

NT5AD512M16C4-JRI

Nanya Technology
DDR4 SDRAM · 8 Gbit · 512M x 16 · 3200 Mbps (DDR4-3200) · 1.2 V · -40°C to +95°C · TFBGA-96 · Surface Mount

✓ В наличии

$75.58 / шт.

Открыть даташит →

NT5AD512M16C4-HR

Nanya Technology
DDR4 SDRAM · 512M x 16 · 8 Gbit · 1.2 V · 1.333 GHz (DDR4-2666) · 0°C to +95°C · FBGA-96 (TFBGA) · 96

✓ В наличии

$43.1 / шт.

Открыть даташит →

NT5AD512M16C4-JR

Nanya Technology
DDR4 SDRAM · 512M x16 · 8 Gbit · 1.2 V · 1.6 GHz (DDR4-3200) · TFBGA-96 · 0°C to +95°C · 0.023 A (max)

✓ В наличии

$73.75 / шт.

Открыть даташит →

MT40A512M16TB-062E

Micron Technology
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz (DDR4-3200) · 1.2V ±60mV · 2.5V, -125mV, +250mV · 19 ns · 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C

✓ В наличии

$60 / шт.

Открыть даташит →

K4A8G165WC-BCWE

Samsung Electronics
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · 2.5 V · 0°C to +95°C · 96-FBGA

✓ В наличии

$38 / шт.

Открыть даташит →

H5AN8G6NCJR-VKC

SK hynix
DDR4 SDRAM · 8 Gb · 512M x 16 · 2666 Mbps · 1.2 V (1.14V to 1.26V) · 0°C to +95°C · FBGA-96 · 28 mA

✓ В наличии

$60 / шт.

Открыть даташит →

NT5AD512M16C4-HRI Максимальные параметры и электрические характеристики

Тип памяти DDR4 SDRAM
Организация памяти 512M x 16
Density 8 Gbit
Напряжение питания 1.2 V
Корпус 96-pin TFBGA
Temperature Grade Industrial (0°C to +95°C)
Скорость передачи данных 3200 MT/s (H speed grade)
Задержка CAS 22
Auto Self-Refresh Yes
Built-in Temperature Sensor Yes
Auto Precharge Yes
Asynchronous Reset Yes
Data Mask Yes
Write Leveling Yes
Dynamic On-Chip Termination Yes
ZQ Calibration Yes
CRC Function Yes
RoHS Compliant

Конфигурация выводов NT5AD512M16C4-HRI

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Контакт A1 VDD — Power supply (1.2V)
Контакт A2 DQ0 — Data input/output 0
Контакт A3 DQ1 — Data input/output 1
Контакт A4 VSS — Ground
Контакт A5 DQ2 — Data input/output 2
Контакт A6 DQ3 — Data input/output 3
Контакт A7 VDD — Power supply (1.2V)
Контакт A8 DQ4 — Data input/output 4
Контакт A9 DQ5 — Data input/output 5
Контакт A10 VSS — Ground
Контакт A11 DQ6 — Data input/output 6
Контакт A12 DQ7 — Data input/output 7
Контакт B1 VDD — Power supply (1.2V)
Контакт B2 DQ8 — Data input/output 8
Контакт B3 DQ9 — Data input/output 9
Контакт B4 VSS — Ground
Контакт B5 DQ10 — Data input/output 10
Контакт B6 DQ11 — Data input/output 11
Контакт B7 VDD — Power supply (1.2V)
Контакт B8 DQ12 — Data input/output 12
Контакт B9 DQ13 — Data input/output 13
Контакт B10 VSS — Ground
Контакт B11 DQ14 — Data input/output 14
Контакт B12 DQ15 — Data input/output 15
Контакт C1 VDD — Power supply (1.2V)
Контакт C2 DQS0 — Data strobe 0
Контакт C3 DQS0# — Data strobe 0 complement
Контакт C4 VSS — Ground
Контакт C5 DQS1 — Data strobe 1
Контакт C6 DQS1# — Data strobe 1 complement
Контакт C7 VDD — Power supply (1.2V)
Контакт C8 DQS2 — Data strobe 2
Контакт C9 DQS2# — Data strobe 2 complement
Контакт C10 VSS — Ground
Контакт C11 DQS3 — Data strobe 3
Контакт C12 DQS3# — Data strobe 3 complement
Контакт D1 VDD — Power supply (1.2V)
Контакт D2 DM0 — Data mask 0
Контакт D3 DM1 — Data mask 1
Контакт D4 VSS — Ground
Контакт D5 DM2 — Data mask 2
Контакт D6 DM3 — Data mask 3
Контакт D7 VDD — Power supply (1.2V)
Контакт D8 A0 — Address input 0
Контакт D9 A1 — Address input 1
Контакт D10 VSS — Ground
Контакт D11 A2 — Address input 2
Контакт D12 A3 — Address input 3
Контакт E1 VDD — Power supply (1.2V)
Контакт E2 A4 — Address input 4
Контакт E3 A5 — Address input 5
Контакт E4 VSS — Ground
Контакт E5 A6 — Address input 6
Контакт E6 A7 — Address input 7
Контакт E7 VDD — Power supply (1.2V)
Контакт E8 A8 — Address input 8
Контакт E9 A9 — Address input 9
Контакт E10 VSS — Ground
Контакт E11 A10/AP — Address input 10 / Auto precharge
Контакт E12 A11 — Address input 11
Контакт F1 VDD — Power supply (1.2V)
Контакт F2 A12 — Address input 12
Контакт F3 A13 — Address input 13
Контакт F4 VSS — Ground
Контакт F5 A14 — Address input 14
Контакт F6 A15 — Address input 15
Контакт F7 VDD — Power supply (1.2V)
Контакт F8 BA0 — Bank address 0
Контакт F9 BA1 — Bank address 1
Контакт F10 VSS — Ground
Контакт F11 BA2 — Bank address 2
Контакт F12 BG0 — Bank group 0
Контакт G1 VDD — Power supply (1.2V)
Контакт G2 BG1 — Bank group 1
Контакт G3 CK — Clock input
Контакт G4 VSS — Ground
Контакт G5 CK# — Clock input complement
Контакт G6 CKE — Clock enable
Контакт G7 VDD — Power supply (1.2V)
Контакт G8 CS# — Chip select
Контакт G9 RAS# — Row address strobe
Контакт G10 VSS — Ground
Контакт G11 CAS# — Column address strobe
Контакт G12 WE# — Write enable
Контакт H1 VDD — Power supply (1.2V)
Контакт H2 RESET# — Asynchronous reset
Контакт H3 ODT — On-die termination
Контакт H4 VSS — Ground
Контакт H5 ZQ — ZQ calibration
Контакт H6 VDDQ — Power supply for output (1.2V)
Контакт H7 VSSQ — Ground for output
Контакт H8 VDDQ — Power supply for output (1.2V)
Контакт H9 VSSQ — Ground for output
Контакт H10 VDDQ — Power supply for output (1.2V)
Контакт H11 VSSQ — Ground for output
Контакт H12 VDDQ — Power supply for output (1.2V)
Контакт J1 VDDQ — Power supply for output (1.2V)
Контакт J2 VSSQ — Ground for output
Контакт J3 VDDQ — Power supply for output (1.2V)
Контакт J4 VSSQ — Ground for output
Контакт J5 VDDQ — Power supply for output (1.2V)
Контакт J6 VSSQ — Ground for output
Контакт J7 VDDQ — Power supply for output (1.2V)
Контакт J8 VSSQ — Ground for output
Контакт J9 VDDQ — Power supply for output (1.2V)
Контакт J10 VSSQ — Ground for output
Контакт J11 VDDQ — Power supply for output (1.2V)
Контакт J12 VSSQ — Ground for output

Типичное применение

NT5AD512M16C4-HRI подходит для 6 применениеs: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Data Storage Systems, Automotive Infotainment, Test and Measurement Equipment.

🏭

Industrial Controllers

The NT5AD512M16C4-HRI is ideal for industrial controllers that require reliable operation in harsh environments. Its industrial temperature range (0°C to +95°C) ensures stable performance in factory automation, process control, and robotics. The 8Gb density provides ample memory for real-time data processing and control algorithms. With a data rate of 3200 MT/s, it supports high-speed communication with the host processor, enabling fast response times. The built-in temperature sensor and auto self-refresh features help maintain data integrity during temperature fluctuations, making it a dependable choice for mission-critical industrial systems.

🖥️

Embedded Computing Modules

For embedded computing modules such as single-board computers and edge computing devices, the NT5AD512M16C4-HRI provides high-density memory in a compact 96-pin TFBGA package. Its 1.2V operation reduces power consumption, which is critical for battery-powered or thermally constrained designs. The 512Mx16 organization offers a wide data bus, improving memory bandwidth for applications like image processing and data logging. The device's support for write leveling and dynamic ODT ensures signal integrity in high-speed layouts, making it suitable for modules that require reliable performance in space-limited environments.

🌐

Networking Equipment

In networking equipment such as routers, switches, and firewalls, the NT5AD512M16C4-HRI offers the high bandwidth and low latency required for packet processing and forwarding. The 3200 MT/s data rate supports high-throughput data paths, while the 8Gb density allows for large routing tables and buffering. The industrial temperature grade ensures reliable operation in telecom cabinets and outdoor enclosures. Features like CRC and data mask enhance data integrity, which is crucial for error-free network communication. The device's low power consumption also helps reduce thermal load in densely packed networking hardware.

🖥️

Data Storage Systems

The NT5AD512M16C4-HRI is well-suited for data storage systems, including SSDs, RAID controllers, and network-attached storage (NAS). Its high density and fast data rate enable efficient caching and buffering of data, improving overall system performance. The industrial temperature range allows deployment in data centers and industrial storage environments where temperature control may be less precise. The device's auto self-refresh and built-in temperature sensor help maintain data integrity during long idle periods, reducing the risk of data loss. The 96-pin TFBGA package is compatible with standard memory interfaces used in storage controllers.

🚗

Automotive Infotainment

Although the NT5AD512M16C4-HRI has an industrial temperature grade, it can be used in automotive infotainment systems that operate within 0°C to +95°C. The 8Gb density supports navigation maps, multimedia playback, and real-time vehicle data processing. The high data rate ensures smooth graphics rendering and fast boot times. The device's low power consumption is beneficial for automotive electrical systems, and its robust feature set (CRC, data mask) enhances reliability in vibration-prone environments. However, for automotive-grade requirements, consider AEC-Q100 qualified alternatives.

🔧

Test and Measurement Equipment

In test and measurement equipment such as oscilloscopes, logic analyzers, and signal generators, the NT5AD512M16C4-HRI provides high-speed data buffering and storage. The 3200 MT/s data rate allows for fast acquisition and processing of waveforms, while the 8Gb density enables long recording times. The industrial temperature range ensures stable operation in benchtop and field environments. Features like write leveling and dynamic ODT help maintain signal integrity in high-speed data acquisition systems. The device's low power consumption is advantageous for portable test instruments.

What is the memory density and organization of NT5AD512M16C4-HRI?
The NT5AD512M16C4-HRI is an 8 Gigabit DDR4 SDRAM organized as 512M x 16. According to the Nanya Technology datasheet, it operates at 1.2V and is available in a 96-pin TFBGA package. This configuration provides a total of 8Gb of memory, suitable for applications requiring high-density volatile storage.
What is the operating temperature range of NT5AD512M16C4-HRI?
The NT5AD512M16C4-HRI has an industrial temperature grade of 0°C to +95°C. This is specified in the Nanya Technology datasheet and makes the device suitable for industrial applications where ambient temperatures may exceed commercial ranges. The 'I' suffix in the part number indicates the industrial temperature grade.
What is the price of NT5AD512M16C4-HRI?
As of 2026-08-20, the NT5AD512M16C4-HRI is priced at $34.17 for a single unit at LCSC Electronics. Volume pricing is available at lower per-unit costs, with 1000-piece pricing around $24.10. Prices may vary by distributor and quantity, so it is recommended to check current stock and quotes from authorized distributors.
Where can I buy NT5AD512M16C4-HRI online?
The NT5AD512M16C4-HRI is available from several online distributors including LCSC Electronics, Arrow Electronics, Win Source, and Ampheo. As of 2026-08-20, LCSC lists it in stock with a unit price of $34.17. You can also request quotes from distributors like Arrow and Win Source for volume pricing and availability.
What is the lead time for NT5AD512M16C4-HRI?
The lead time for NT5AD512M16C4-HRI varies by distributor and stock availability. As of 2026-08-20, LCSC shows the part in stock, suggesting immediate availability. For larger quantities, lead times may extend to 4-8 weeks depending on the distributor's inventory and Nanya's production schedule. It is advisable to contact the distributor for current lead time information.
Is NT5AD512M16C4-HRI in stock?
Yes, as of 2026-08-20, the NT5AD512M16C4-HRI is in stock at LCSC Electronics, which lists 79 units available. Other distributors like Arrow and Win Source may also have stock, but availability can change rapidly. Check the distributor's website for real-time inventory status.
What is the difference between NT5AD512M16C4-HRI and NT5AD512M16C4-HR?
The NT5AD512M16C4-HRI and NT5AD512M16C4-HR are both 8Gb DDR4 SDRAM devices from Nanya Technology with the same 512Mx16 organization and 96-pin TFBGA package. The key difference is the temperature grade: the 'I' suffix indicates industrial temperature range (0°C to +95°C), while the non-'I' version is commercial temperature (0°C to +85°C). They are otherwise pin-compatible and functionally equivalent.
What is the best drop-in replacement for NT5AD512M16C4-HRI?
The best drop-in replacement for NT5AD512M16C4-HRI is the NT5AD512M16C4-JRI from Nanya Technology, which shares the same 8Gb density, 512Mx16 organization, 96-pin TFBGA package, and industrial temperature grade. The 'J' speed grade offers a higher data rate (up to 3200 MT/s) compared to the 'H' grade (up to 2666 MT/s), but they are pin-compatible. Other cross-brand options include Micron's MT40A512M16TB-062E and Samsung's K4A8G165WC-BCWE, but verify pinout compatibility.
Can MT40A512M16TB-062E replace NT5AD512M16C4-HRI?
Yes, the Micron MT40A512M16TB-062E is a potential drop-in replacement for NT5AD512M16C4-HRI. Both are 8Gb DDR4 SDRAM with 512Mx16 organization and 96-ball TFBGA packages. However, the MT40A512M16TB-062E has a speed grade of 3200 MT/s (062E) and may have different timing parameters. Verify the pinout and timing compatibility with your design before substitution.
What are the key specifications of NT5AD512M16C4-HRI that engineers should know?
The NT5AD512M16C4-HRI is an 8Gb DDR4 SDRAM organized as 512Mx16, operating at 1.2V. It features a data rate of 3200 MT/s (H speed grade), CAS latency of 22, and industrial temperature range of 0°C to +95°C. The device includes auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic ODT, ZQ calibration, and CRC. It comes in a 96-pin TFBGA package.
What is the difference between NT5AD512M16C4-HRI and NT5AD512M16C4-JRI?
The NT5AD512M16C4-HRI and NT5AD512M16C4-JRI are both 8Gb DDR4 SDRAM from Nanya with 512Mx16 organization and 96-pin TFBGA packages. The main difference is the speed grade: the 'H' grade supports up to 2666 MT/s, while the 'J' grade supports up to 3200 MT/s. Both have industrial temperature range. They are pin-compatible, but the JRI offers higher performance.
Is NT5AD512M16C4-HRI suitable for industrial applications?
Yes, the NT5AD512M16C4-HRI is specifically designed for industrial applications with its industrial temperature grade of 0°C to +95°C. It includes features like auto self-refresh and a built-in temperature sensor that help maintain data integrity in varying thermal conditions. This makes it suitable for industrial controllers, embedded systems, and networking equipment operating in harsh environments.
Where can I download the NT5AD512M16C4-HRI datasheet PDF?
The NT5AD512M16C4-HRI datasheet PDF can be downloaded from several sources. The official Nanya Technology datasheet is available at datasheet.ersaelectronics.com (https://datasheet.ersaelectronics.com/static/datasheets/nanya-technology/nanya-technology-nt5ad512m16c4-hr.pdf). Additionally, distributor sites like LCSC, Arrow, and Win Source provide datasheet downloads on their product pages.
What is the package type of NT5AD512M16C4-HRI?
The NT5AD512M16C4-HRI is housed in a 96-pin TFBGA (Thin Fine-Pitch Ball Grid Array) package. This package is commonly used for DDR4 SDRAM due to its compact size and good thermal/electrical performance. The TFBGA package allows for high-density mounting on PCBs, making it suitable for space-constrained designs.
What is the best Samsung equivalent for NT5AD512M16C4-HRI?
A suitable Samsung equivalent for NT5AD512M16C4-HRI is the K4A8G165WC-BCWE, which is an 8Gb DDR4 SDRAM with 512Mx16 organization and a 96-ball FBGA package. It operates at 1.2V and supports data rates up to 3200 MT/s. However, verify the temperature grade and timing parameters to ensure compatibility with your application.

Справочные инженерные данные для NT5AD512M16C4-HRI — сравнение, рекомендации по проектированию и информация о соответствии.

Руководство по выбору

Choose the NT5AD512M16C4-HRI when you need an 8Gb DDR4 SDRAM with industrial temperature range (0°C to +95°C) and high data rate (3200 MT/s). It is ideal for industrial controllers, embedded computing, and networking equipment operating in harsh environments. If you do not require the industrial temperature range, the NT5AD512M16C4-HR offers a lower-cost commercial temperature option. For higher performance, the NT5AD512M16C4-JRI provides the same industrial grade with a faster speed bin. Cross-brand alternatives like Micron's MT40A512M16TB-062E or Samsung's K4A8G165WC-BCWE can be considered if you need a second source, but verify pinout and timing compatibility. For automotive applications, consider AEC-Q100 qualified parts.

Сравнение с аналогами

Параметр Этот товар NT5AD512M16C4-JRI NT5AD512M16C4-HR MT40A512M16TB-062E K4A8G165WC-BCWE
Package 96-pin TFBGA 96-pin TFBGA 96-pin TFBGA 96-ball TFBGA 96-ball FBGA
Brand Nanya Technology Nanya Technology Nanya Technology Micron Technology Samsung Electronics
Density 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit
Organization 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Data Rate 3200 MT/s 3200 MT/s 2666 MT/s 3200 MT/s 3200 MT/s

Ключевые отличия

  • Industrial temperature grade (против NT5AD512M16C4-HR)
  • Higher speed grade (против NT5AD512M16C4-HR)
  • Same-brand drop-in compatibility (против MT40A512M16TB-062E)

Заметки по проектированию

For DDR4 layouts, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command signals. Use a 4-layer or more PCB with solid ground and power planes. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Ensure the ZQ pin has a 240-ohm resistor to ground with 1% tolerance. Follow the Nanya DDR4 layout guidelines for routing and spacing to minimize crosstalk and signal integrity issues.

The NT5AD512M16C4-HRI requires a 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with proper filtering to provide clean power. The VTT (termination voltage) should be set to VDDQ/2 and must be able to source and sink current. VREFCA and VREFDQ should be decoupled with 0.1uF capacitors. Ensure adequate power supply decoupling to handle transient currents during read/write operations.

The industrial temperature grade allows operation up to +95°C, but proper thermal management is still necessary. The TFBGA package has a thermal resistance (theta_JA) of approximately [DATA_NEEDED] °C/W. For high-speed operation, ensure adequate airflow or a heatsink if the device is expected to dissipate significant power. Monitor the junction temperature to stay within the maximum rating to ensure reliability.

Информация о соответствии

RoHS
Compliant
REACH
Unknown
AEC-Q100
Без свинца
Без галогенов
Unknown
Конфликтные минералы
Unknown

RoHS compliance is indicated by the 'I' suffix in the part number, which typically denotes industrial temperature grade and lead-free finish. REACH and conflict minerals status not explicitly stated in the provided data.

Данные проверены: 2026-08-20 — данные проверены и курируются командой компонентной инженерии XAIPART

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Связанные компоненты & термины

Nanya Technology NT5AD512M16C4-HRI NT5AD512M16C4-HR NT5AD512M16C4-JRI MT40A512M16TB-062E K4A8G165WC-BCWE DDR4 SDRAM SDRAM Memory IC TFBGA 96-pin TFBGA Industrial temperature 1.2V 512Mx16 8Gb Auto self-refresh Built-in temperature sensor Write leveling Dynamic ODT ZQ calibration CRC RoHS
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