H5CG48MEBDX018N - DDR5 16Gb SDRAM FCBGA | SK Hynix
부품 번호: H5CG48MEBDX018N ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1 | $1.00 |
| 10 | $1 | $10.00 |
| 100 | $1 | $100.00 |
| 500 | $1 | $500.00 |
| 1,000 | $1 | $1,000.00 |
H5CG48MEBDX018N 개요
DDR5 SDRAM is the fifth generation of Double Data Rate synchronous dynamic random-access memory, the dominant main-memory technology hierarchy that runs from DRAM cell arrays up through memory ICs to full memory modules (DIMMs) and, more broadly, semiconductor storage subsystems. Compared with DDR4, DDR5 doubles the bank groups, moves the power management IC (PMIC) onto the module, and lowers the per-pin operating voltage to 1.1V, enabling higher data rates with improved power efficiency.
Key features of this device include a 16Gb density organized as 2G x 8, an 8-bit data bus width, a nominal 1.1V supply, and family data rates spanning 4800 Mbps to 5600 Mbps. DDR5-specific features such as on-die ECC (ODECC), decision-feedback equalization (DFE), and same-bank refresh improve effective reliability and bandwidth utilization in high-density configurations.
Technically, the H5CG48MEBDX018N belongs to SK Hynix M-die DDR5 generation; the M-die variants (H5CG48MEBDX014N at 4800 Mbps) are widely documented as drop-in replacements for earlier A-die parts such as the H5CG48AGBDX018N at DDR5-5600, per published cross-reference guidance. Package ballout and command/address pin assignment follow the JEDEC DDR5 x8 component convention, allowing single-sourcing BOM flexibility within the family.
Typical applications include PC and workstation main memory, server and data center RDIMM/DIMM modules, embedded computing modules, industrial controllers, and network appliances requiring high-bandwidth main memory.
Design consideration: verify the exact data-rate bin and speed-grade suffix of your BOM line against the system memory controller DDR5 training range, since 4800 Mbps and 5600 Mbps variants share the package footprint but differ in timing parameters.
This page synthesizes distributor inventory, family cross-references, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: H5CG48MEBDX018N — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5CG48MEBDX018N (동일 폼 팩터 및 풋프린트) — 차이점: Organization, Data Rate, Density, Package, Operating Temperature.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5CG48AGBDX018N
✅ 드롭인✓ 재고 있음
$87.42 / 개
데이터시트 보기 →H5CG48AEBDX018N
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
H5CG48MEBDX014N
✅ 드롭인✓ 재고 있음
$41.68 / 개
데이터시트 보기 →H5CG48AGBDX014N
✅ 드롭인✓ 재고 있음
$70 / 개
데이터시트 보기 →H5CG46AGBDX017N
✅ 드롭인✓ 재고 있음
$91.73 / 개
데이터시트 보기 →H5CG48MEBDX018N 최대 정격 & 전기적 특성
| 메모리 유형 | DDR5 SDRAM |
| Density | 16Gb (2G x 8) |
| 메모리 구성 | 2G x 8 |
| Bus Width | 8 bit |
| 공급 전압 | 1.1 V |
| 패키지 | 78-ball FCBGA |
| 실장 유형 | Surface Mount |
| Die Generation | M-die (family: A-die and M-die variants exist) |
| 동작 온도 | 0C to +95C (LCSC listing for M-die family part) |
| 인터페이스 유형 | DDR5 parallel |
| On-Die ECC | Yes (DDR5 standard feature) |
H5CG48MEBDX018N 78-ball fcbga 핀 구성 가이드
H5CG48MEBDX018N(78-ball fcbga 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: H5CG48MEBDX018N.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
H5CG48MEBDX018N 적합 용도: 6 애플리케이션s: PC and Workstation Main Memory, Server and Data Center RDIMM Modules, Embedded Computing Modules, Industrial Controllers and Automation, Networking and Communication Equipment, Consumer Electronics and Set-Top Platforms.
PC and Workstation Main Memory
The H5CG48MEBDX018N serves as a core building block for desktop and workstation DDR5 memory subsystems, where its 16Gb 2G x 8 organization lets a two-module 32GB kit use sixteen x8 devices across both sides of two UDIMMs. At a 1.1V VDD with on-die ECC, the part reduces per-bit power versus DDR4-3200 at comparable bandwidth, and its 78-ball FCBGA footprint matches the standard DDR5 x8 component ball map used by module designers. Performance consideration: memory-controller training firmware must support the M-die generation; systems validated on A-die parts (H5CG48AGBDX018N, DDR5-5600) typically require a BIOS update or timing-table addition to train M-die components reliably at the target bin.
추천
Server and Data Center RDIMM Modules
In data center servers, 16Gb x8 DDR5 components such as the H5CG48MEBDX018N populate RDIMM and LRDIMM modules where capacity per socket drives virtualization density. The DDR5 architecture moves the PMIC onto the module and increases bank groups, letting 16Gb x8 parts sustain higher effective bandwidth than DDR4-3200 x8 predecessors at roughly 20% lower standby power per bit. The device's on-die ECC reduces uncorrectable-bit risk in high-population deployments. Design consideration: registered clock drivers (e.g., a DDR5 RCD companion IC) generate the CA bus for all x8 components on the module, so substituting this M-die part requires the RCD and SPD firmware tables to include its die generation and speed bin for reliable training at 4800-5600 Mbps.
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Embedded Computing Modules
Embedded computing modules (COM Express, SMARC, and custom SBCs) use soldered-down 16Gb DDR5 components like the H5CG48MEBDX018N to achieve 2-4GB RAM per x8 device without SO-DIMM sockets, improving vibration tolerance and reducing profile. The 78-ball FCBGA package supports standard DDR5 fly-by or point-to-point routing; in point-to-point designs the memory controller can train this part directly. Its 1.1V rail simplifies power-tree design with a single DDR5 PMIC. Trade-off: soldered DRAM is not field-upgradable, so multi-sourcing at layout time - qualifying both this M-die part and the A-die H5CG48AGBDX018N on the same land pattern - protects against allocation gaps documented across the DDR5 supply chain in 2026.
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Industrial Controllers and Automation
Industrial programmable controllers, vision systems, and edge gateways need DRAM capacity for frame buffers and real-time data logging, making the 16Gb H5CG48MEBDX018N a fit where eMMC alone is too slow for working memory. The LCSC family listing specifies 0C to +95C operation, covering most factory-floor enclosures with forced or convection cooling. On-die ECC improves data integrity in electrically noisy environments, and the 1.1V FCBGA package keeps thermal density manageable: at typical DDR5-4800 active currents, a four-device bank dissipates on the order of 2-4W total (estimate based on family-class power figures, not a datasheet value for this MPN). Verify conduction cooling and copper pour under the BGA land pattern for sustained 85C ambient applications.
추천
Networking and Communication Equipment
Enterprise switches, routers, and 5G small-cell platforms use banks of 16Gb DDR5 x8 components such as the H5CG48MEBDX018N as packet-buffer and control-plane memory for network processors and CPUs. The 8-bit bus organization allows wide, flexibly banked subsystems (e.g., eight devices forming a 64-bit plus ECC channel), and DDR5's on-die ECC plus controller-side link ECC address the soft-error sensitivity of high-density packet buffers. Bandwidth at the family's 4800-5600 Mbps bins supports multi-gigabit line-rate forwarding with headroom. Design consideration: long fly-by traces on switch boards benefit from the DDR5 DFE and equalization on this generation; confirm the SoC memory-reference code includes M-die training profiles before layout release.
추천
Consumer Electronics and Set-Top Platforms
Smart TV SoCs, set-top boxes, and gaming peripherals deploy soldered 16Gb DDR5 components to reach 4-8GB unified memory in minimal board area, and the H5CG48MEBDX018N's 78-ball FCBGA and 1.1V supply match these cost- and power-sensitive designs. DDR5's lower VDD reduces standby power, a key metric for always-on consumer devices, while 4800-5600 Mbps bins give SoC integrators frequency options for cost-tiered product lines using one PCB footprint. Supply-chain note: consumer DRAM demand swings create allocation; the validated M-die/A-die interchangeability (documented in the April 2026 cross-reference guidance) lets consumer OEMs alternate between H5CG48MEBDX018N, H5CG48MEBDX014N, and H5CG48AGBDX018N as spot availability shifts, provided firmware training tables cover both die generations.
추천
추천 제품 요약
엔지니어링 참조 데이터: H5CG48MEBDX018N — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5CG48AGBDX018N | H5CG48AEBDX018N | H5CG48MEBDX014N | H5CG48AGBDX014N |
|---|---|---|---|---|---|
| Package | 78-ball FCBGA | 78-ball FCBGA - same | 78-ball FCBGA - same | 78-ball FCBGA - same | 78-ball FCBGA - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density / Organization | 16Gb / 2G x 8 | 16Gb / 2G x 8 | 16Gb / 2G x 8 | 16Gb / 2G x 8 | 16Gb / 2G x 8 |
| Die Generation | M-die | A-die | A-die | M-die | A-die |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
주요 차별점
- M-die supply-resilience generation (vs H5CG48AGBDX018N)
- Identical footprint across die generations (vs H5CG48AEBDX018N)
- Trade-off: lower proven speed-bin availability than A-die (vs H5CG48AGBDX018N)
설계 노트
DDR5 x8 components require per-byte DQS timing and read/write training at the memory controller. When substituting between A-die (H5CG48AGBDX018N) and M-die parts on the same 78-ball FCBGA footprint, confirm the SoC or RCD firmware includes training profiles for both die generations; published cross-reference guidance notes that M-die parts are validated drop-ins for A-die only after controller support is confirmed. Maintain matched trace lengths within a byte lane and follow the DDR5 fly-by CA routing rules from the platform design guide.
The device runs from a 1.1V VDD (plus VDDQ rails per DDR5 specification). For soldered-down banks of four or more devices, budget power using the datasheet IDD currents for the specific speed bin, and place the DDR5 PMIC (with per-rail sense lines) close to the DRAM bank to control droop during simultaneous read/write bursts. Estimated: a four-device bank at DDR5-4800-class active currents dissipates roughly 2-4W total; verify against the actual datasheet IDD values rather than this estimate for thermal sign-off.
The 78-ball FCBGA needs a land pattern per the manufacturer datasheet ball map and an adequate via-in-pad or dog-bone escape strategy on 0.8mm-class ball pitch. Place a solid return plane directly under the DRAM bank, keep DQ/DQS routing on layers adjacent to that plane, and provide multiple GND balls to plane connections with short, wide vias. For thermal reliability above 2W per device, extend copper pour on the board side beneath the BGA; DRAM BGAs have no exposed thermal pad, so heat exits primarily through the balls.
Do not assume all H5CG48 suffixes are interchangeable in timing: the 014N suffix denotes DDR5-4800 while 018N corresponds to a faster bin, and mixing bins on a shared memory channel forces the entire channel to the slowest common bin. Also confirm the operating temperature grade of your exact MPN - LCSC lists 0C to +95C for one family member but 0C to +85C for another - before deploying in enclosed industrial environments.
규정 준수 정보
Compliance status not stated in the provided web data; request manufacturer compliance certificates from SK Hynix for the exact MPN.
