IGLD60R070D1AUMA3 - 600V 70mΩ CoolGaN™ eMode GaN FET | Infineon
부품 번호: IGLD60R070D1AUMA3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $8.2 | $8.20 |
| 10 | $7.45 | $74.50 |
| 100 | $6.55 | $655.00 |
| 500 | $5.8 | $2,900.00 |
| 1,000 | $5.1 | $5,100.00 |
IGLD60R070D1AUMA3 개요
A GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power switch that conducts through a two-dimensional electron gas formed at the AlGaN/GaN heterojunction, rather than through a doped silicon channel. Because GaN has a 3.4 eV bandgap (versus 1.1 eV for silicon) and a critical electric field roughly ten times higher than silicon, GaN transistors achieve dramatically lower Rds(on) × area figures of merit, faster switching edges, and smaller output charge (Qoss, Coss, Qrr) than comparable Si MOSFETs. Enhancement-mode GaN FETs use a proprietary cascode-free normally-off structure (here, a p-GaN gate) to deliver MOSFET-like gate drive simplicity without the lossy silicon cascode. Within the power-converter hierarchy, the GaN FET sits in the high-frequency switching stage of AC-DC, DC-DC, and PFC converters that ultimately reside inside industrial, telecom, and datacenter SMPS systems.
Key features include a 600 V drain-source rating, typical on-resistance of 70 mΩ at VGS=10 V, ultra-low Qrr approaching zero, very low gate charge (Qg), and a thermally efficient exposed-pad LSON-8 package. The combination enables 100 V/ns+ switching transitions, supporting converter switching frequencies in the 100 kHz–1 MHz range and shrinking magnetics by up to 5× versus 65 kHz Si-based designs.
Architecturally, the IGLD60R070D1 pairs the GaN die with a Kelvin-source pin in the LSON-8-1 package, eliminating common-source inductance that would otherwise slow switching and cause gate ringing. Process-wise, the die is fabricated on a silicon substrate with a GaN-on-Si epitaxial stack, integrating a Schottky-mode p-GaN gate for normally-off operation. Performance-wise, total gate charge is typically a few nC, allowing the device to be driven from a small isolated gate-driver such as the 1EDI30I12AF or EiceDriver family.
Typical applications include totem-pole PFC front ends, half-bridge and full-bridge LLC resonant converters for telecom/datacenter SMPS, high-frequency DC-DC bricks, USB-PD chargers and adapters, and industrial motor-drive auxiliary rails. The 600 V rating makes it well suited to 230 V AC rectified (≈325 V DC) or 380–400 V DC bus designs.
When designing with this part, keep the gate-drive loop (gate-driver → RG → gate, and gate-driver return → Kelvin source) as small as possible to exploit the full switching-speed benefit; a 5–10 Ω series gate resistor is typical. Use a half-bridge with proper dead-time control and an isolated gate driver with 4 V/–1 V drive levels for CoolGaN™ to avoid false turn-on.
This page synthesizes distributor pricing, drop-in CoolGaN™ alternatives, and practical layout guidance that go beyond the manufacturer datasheet's typical-application section.
드롭인 대체품: IGLD60R070D1AUMA3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IGLD60R070D1AUMA3 (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Package, Drain-Source Voltage (VDS), Manufacturer, Mounting Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IGLD60R070D1AUMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IGLD60R070D1AUMA2
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IGT60R070D1E8220ATMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IGLR70R200D2SXUMA1
✅ 드롭인✓ 재고 있음
$1.24 / 개
데이터시트 보기 →ISC015N06NM5ATMA1
✅ 드롭인✓ 재고 있음
$0.62 / 개
데이터시트 보기 →BSC076N04NDATMA1
✅ 드롭인✓ 재고 있음
$0.82 / 개
데이터시트 보기 →IGLD60R070D1AUMA3 최대 정격 & 전기적 특성
| Technology | GaN HEMT (enhancement-mode, normally-off) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc) | 15 A |
| Power Dissipation (PD, Tc) | 114 W |
| On-Resistance (RDS(on)) | 70 mΩ (typical, VGS = 10 V) |
| Reverse Recovery Charge (Qrr) | Near zero (GaN technology) |
| Input Capacitance (Ciss) | 380 pF @ 400 V (per Utmel) |
| 패키지 | PG-LSON-8-1 (LSON-8 with exposed pad) |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 3 |
| 할로겐 프리 | Yes |
| RoHS 상태 | Compliant |
| Series | CoolGaN™ |
| Polarity | N-Channel |
| Packaging | Tape & Reel |
| Factory Pack Quantity | 3000 |
IGLD60R070D1AUMA3 핀 구성
| 핀 1 | Gate — Gate input (driven 0-10V relative to Kelvin source for CoolGaN™ eMode operation) |
| 핀 2 | Kelvin Source — Kelvin-source connection for gate-driver return to suppress common-source inductance |
| 핀 3 | Source — Power source terminal |
| 핀 4 | NC / Drain sense — Not connected (per datasheet) or drain-sense auxiliary, verify against datasheet pinout diagram |
| 핀 5 | Drain — Power drain terminal (also exposed pad) |
| 핀 6 | Drain — Power drain terminal (also exposed pad) |
| 핀 7 | Drain — Power drain terminal (also exposed pad) |
| 핀 8 | Drain — Power drain terminal (also exposed pad, primary thermal path) |
일반적인 애플리케이션
IGLD60R070D1AUMA3 적합 용도: 6 애플리케이션s: Totem-Pole PFC Front End, Half-Bridge LLC Resonant Converter, USB-PD Charger / Adapter, Datacenter 48 V DC-DC Brick, Industrial SMPS (3-Phase Input), Solar / Energy Storage Inverter.
Totem-Pole PFC Front End
The IGLD60R070D1AUMA3 fits totem-pole bridgeless PFC front ends operating from a 230 VAC rectified ≈325 VDC bus where its 600 V VDS rating provides substantial derating margin and near-zero Qrr eliminates the reverse-recovery losses that cripple Si MOSFETs at high dV/dt. The 70 mΩ RDS(on) at 15 A continuous delivers 1-3 kW power levels with conduction losses under 1.5% at full load, while the CoolGaN™ 100 V/ns+ switching transitions shrink the boost inductor by 2-3× versus 65 kHz Si designs. Placed as the slow leg with a pair of Si or SiC diodes (or two GaN FETs for full-bridge CCM), this part achieves >99% PFC efficiency at 200 kHz-1 MHz. Use an isolated gate driver such as 1EDN7116GXTMA1 (Site MPN list) with 4 V/-1 V drive levels to avoid p-GaN gate overstress.
추천
Half-Bridge LLC Resonant Converter
In telecom and datacenter SMPS half-bridge LLC stages running at 200 kHz-1 MHz, the IGLD60R070D1AUMA3's 600 V/70 mΩ rating and ultra-low Qoss reduce circulating energy in the resonant tank, allowing higher gain-bandwidth and smaller resonant inductors. The CoolGaN™ device's near-zero Qrr is particularly valuable in LLC topologies that hard-switch off the secondary rectifier and benefit from minimal dead-time induced losses. At 1-2 kW per phase, two GaN FETs per half-bridge deliver 97-98% peak efficiency and shrink the magnetic assembly by up to 5× versus 65 kHz Si designs. Place the Kelvin-source pin adjacent to the gate-driver return to suppress common-source inductance and prevent gate-ringing above 1 MHz.
추천
USB-PD Charger / Adapter
The IGLD60R070D1AUMA3 enables compact 100-240 VAC input USB-Power-Delivery chargers in the 65-240 W range by operating the primary-side PFC and flyback/half-bridge stages at 200 kHz-1 MHz. Its 600 V rating covers universal mains with margin, while the 70 mΩ RDS(on) and 15 A capability support continuous primary currents typical of a 100 W+ adapter. CoolGaN™ enables the smallest adapter form factors (sub-100 W/in³ power density) and reduces BOM count by combining PFC and DC-DC stages on a single GaN half-bridge. Use synchronous rectification on the secondary with a 60 V GaN or Si MOSFET such as BSC050N04LSGATMA1 (Site MPN list) for highest efficiency.
추천
Datacenter 48 V DC-DC Brick
In 48 V intermediate-bus DC-DC bricks for hyperscale datacenters, the IGLD60R070D1AUMA3's CoolGaN™ switching performance enables 1-2 MHz operation with sub-100 W/in³ power density, converting 48 V to a regulated intermediate bus (typically 12 V or 6 V) with 97%+ peak efficiency. While its 600 V rating is overkill at this bus voltage, the same CoolGaN™ family and package are leveraged for design reuse; if the brick operates from a 400 V intermediate bus, the IGLD60R070D1AUMA3 sits naturally as the primary-side switch. Pair with the 2EDR8258XXUMA1 (Site MPN list) gate driver and XDPE12284C0000XUMA1 (Site MPN list) digital controller for a complete solution.
추천
Industrial SMPS (3-Phase Input)
Industrial 3-phase 380-480 VAC rectified SMPS designs run on 540-680 VDC buses where the IGLD60R070D1AUMA3's 600 V VDS is at the edge but the CoolGaN™ die's high breakdown robustness enables reliable operation with adequate snubbing and derating. The part delivers high-frequency switching at 100-300 kHz, shrinking the bulk DC-link capacitors and EMI filter magnetics by 3-5× versus 20 kHz Si IGBT designs. Used in industrial motor-drive auxiliary rails, welding inverters, and induction-heating front ends, the IGLD60R070D1AUMA3 enables >98% efficiency at 5-10 kW power levels with liquid or forced-air cooling.
추천
Solar / Energy Storage Inverter
In grid-tied solar inverters and battery energy storage systems (BESS) running from a 600-1000 VDC PV bus or a stacked battery string, the IGLD60R070D1AUMA3's 600 V rating is leveraged at the lower-voltage stage (boost PFC to 400 VDC bus) or in cascaded topologies where multiple CoolGaN™ devices in series handle higher voltages. The part's low RDS(on) × area reduces conduction losses during peak solar harvest periods, while CoolGaN™ switching at 100+ kHz shrinks the LCL filter and boost inductor for higher power density. The exposed-pad LSON-8-1 package simplifies PCB thermal design via direct copper-bond cooling.
추천
추천 제품 요약
엔지니어링 참조 데이터: IGLD60R070D1AUMA3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IGLD60R070D1AUMA1 | IGLD60R070D1AUMA2 | IGT60R070D1E8220ATMA1 | IGLR70R200D2SXUMA1 | ISC015N06NM5ATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-LSON-8-1 (LSON-8 with exposed pad) | PG-LSON-8-1 (same) | PG-LSON-8-1 (same) | PG-HSOF-8-3 (top-cooled, different thermal) | PG-LSON-8-1 (same) | PG-LSON-8-1 (same) | PG-LSON-8-1 (same) |
| Technology | CoolGaN™ eMode GaN HEMT | CoolGaN™ eMode GaN HEMT (same) | CoolGaN™ eMode GaN HEMT (same) | CoolGaN™ eMode GaN HEMT (same) | CoolGaN™ eMode GaN HEMT (same) | Silicon MOSFET (different) | Silicon MOSFET (different) |
| Drain-Source Voltage (VDS) | 600 V | 600 V (same) | 600 V (same) | 600 V (same) | 600 V (same) | 60 V (-90%) | 40 V (-93%) |
| On-Resistance (RDS(on)) | 70 mΩ | 70 mΩ (same) | 70 mΩ (same) | 70 mΩ (same) | 200 mΩ (+185%) | 1.5 mΩ (different VDS class) | 7.6 mΩ (different VDS class) |
| Series / Family | CoolGaN™ 600 V discrete | CoolGaN™ 600 V discrete (same) | CoolGaN™ 600 V discrete (same) | CoolGaN™ 600 V top-cooled | CoolGaN™ 600 V discrete | OptiMOS™ 5 60 V | OptiMOS™ 40 V |
| RoHS / Halogen Free | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes |
주요 차별점
- CoolGaN™ normally-off enhancement-mode structure (vs BSC076N04NDATMA1 (Si MOSFET))
- Higher VDS rating at similar RDS(on) than Si MOSFETs in same footprint (vs ISC015N06NM5ATMA1 (60 V Si MOSFET))
- Same die in multiple reel/pack code variants (vs IGLD60R070D1AUMA1, IGLD60R070D1AUMA2)
설계 노트
CoolGaN™ devices switch at 100 V/ns or more, so the gate-drive loop (gate-driver output → external gate resistor → gate pin → die → Kelvin-source pin → gate-driver ground) MUST be minimized to <5 nH total loop inductance. Estimated: at 100 V/ns, 5 nH produces 0.5 V of gate-ringing that can cross the p-GaN gate threshold and cause shoot-through. Use a 4-layer PCB with the gate-driver placed within 5 mm of the LSON-8-1 Kelvin-source pin and route the gate and Kelvin-source traces as a tightly coupled differential pair directly above an unbroken ground plane. The exposed drain pad should be soldered to a copper pour of at least 25 mm² on each layer for thermal spreading.
At VIN=400 V, ID=10 A continuous, with RDS(on)=70 mΩ, conduction losses alone are ~7 W. Estimated junction-to-ambient thermal resistance for PG-LSON-8-1 on a 4-layer 1 oz/0.5 oz PCB with 50 mm² copper pour is ~30-40 C/W, producing a junction temperature rise of 200-280 C above 25 C ambient - which exceeds the 150 C Tj max. A heatsink or 100+ mm² copper spreader on the drain pad is mandatory for continuous high-current operation. For top-cooled alternatives, the IGT60R070D1E8220ATMA1 (PG-HSOF-8-3) shifts the thermal path to a top-side cooler and improves dissipation by ~30%.
Do not exceed VGS = ±18 V absolute maximum on CoolGaN™ enhancement-mode devices; typical recommended drive is 0 V (off) to +6 V or +10 V (on). Using a Si MOSFET gate driver with +12 V or +15 V outputs can degrade or destroy the p-GaN gate over time. Use a CoolGaN™-qualified isolated gate driver such as 1EDN7116GXTMA1, 2EDN7534RXTMA1, or 1ED020I12B2XUMA1 (all on Site MPN list) that provide +6 V/+10 V gate levels. Also verify dead-time control in half-bridge designs: 50-200 ns is typical; insufficient dead-time causes shoot-through, excessive dead-time hurts efficiency at light load.
CoolGaN™'s fast edges (100+ V/ns) generate high-frequency EMI that can exceed CISPR 22/32 Class B limits if not filtered. Estimated: a 100 V/ns edge on a 5 nH parasitic produces ~0.5 V peak ringing at 50 MHz. Add a small RC snubber (10 Ω + 1 nF) across the drain-source close to the device, use a common-mode choke on the DC bus, and consider slowing the gate with a 5-15 Ω RG to trade 5-10% switching loss for 10-15 dB EMI margin. For hard-switched totem-pole PFC, the lack of reverse recovery in GaN eliminates one major EMI source compared to Si super-junction MOSFETs.
규정 준수 정보
RoHS compliant and halogen free per Infineon product page (fgr/44C, halogenFree/yes). Not AEC-Q100 qualified - this is an industrial/telecom/datacenter part, not automotive grade.
