IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon
부품 번호: IPL65R230C7AUMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
IPL65R230C7AUMA1 개요
A superjunction (SJ) MOSFET is a power-MOSFET architecture that uses alternating P- and N-doped epitaxial layers to break the silicon limit of conventional planar MOSFETs, simultaneously reducing on-resistance and gate charge. CoolMOS is the leading superjunction family, and the C7 generation specifically targets hard-switching topologies such as PFC and LLC converters in switch-mode power supplies (SMPS). CoolMOS parts sit within the broader power-semiconductor taxonomy: superjunction MOSFET -> MOSFET -> discrete power transistor -> discrete semiconductor.
Key features of the IPL65R230C7AUMA1 include a 650 V drain-source breakdown voltage, a 230 mOhm maximum RDS(on) at 25 C, integrated ESD protection, a low gate charge (Qg) for reduced driver losses, and an operating junction temperature range of -55 C to +150 C. The PG-VSON-4 package has an exposed drain pad that doubles as the thermal interface, enabling low thermal resistance suitable for high-density SMD layouts.
Technically, the C7 generation uses an optimized cell pitch and a refined field-plate structure that reduces both capacitive switching charge (Qgd) and output charge (Qoss). Compared with C6 and P6 predecessors, C7 lowers Eoss-related turn-on losses in resonant topologies and improves light-load efficiency in hard-switched converters.
Typical applications include power-factor-correction (PFC) boost stages in SMPS, LLC half-bridge resonant converters, telecom rectifiers, server and workstation silver-box power supplies, solar inverters, and industrial welding equipment. Designers select this part when a 650 V breakdown margin is required for 400 V rectified-bus operation and when the 230 mOhm RDS(on) delivers acceptable conduction loss at the chosen switching frequency.
When laying out the PCB, keep the gate-drive loop area (gate-driver IC, gate resistor, and MOSFET gate-source) minimal to avoid ringing, and place a small RC snubber across the drain-source if the layout is not optimal. Because the PG-VSON-4 drain pad is the main heatsinking path, an adequate copper area on the drain pad is essential for staying within the SOA at full load.
This page synthesizes distributor pricing, parametric alternatives, and practical design notes for the IPL65R230C7AUMA1 that are not bundled together in the Infineon datasheet alone.
드롭인 대체품: IPL65R230C7AUMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPL65R230C7AUMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Series, Continuous Drain Current (ID) at Tc, Drain-Source Voltage (VDS).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPL60R185P7AUMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPL65R190E6AUMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPD65R225C7ATMA1
✅ 드롭인✓ 재고 있음
$1.34 / 개
데이터시트 보기 →IPB65R225C7ATMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPL65R230C7AUMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Series | CoolMOS C7 |
| 트랜지스터 유형 | N-Channel MOSFET |
| Technology | Superjunction (CoolMOS C7) |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) at Tc | 10 A |
| Power Dissipation (PD) at Tc | 67 W |
| Drain-Source On-Resistance (RDS(on)) max | 230 mOhm |
| 동작 접합 온도 | -55 C to +150 C |
| 패키지 | PG-VSON-4 (surface mount, 4 pins) |
| 실장 유형 | Surface Mount |
| ESD Protection | Yes (integrated, per datasheet) |
| RoHS 상태 | Compliant |
| 할로겐 프리 | Yes (per Infineon product page) |
IPL65R230C7AUMA1 핀 구성
| 핀 1 | G — Gate (drive input) |
| 핀 2 | D — Drain (also exposed pad) |
| 핀 3 | S — Source |
| 핀 4 | S — Source (second source pin) |
일반적인 애플리케이션
IPL65R230C7AUMA1 적합 용도: 6 애플리케이션s: Power Factor Correction (PFC) Boost Stage, LLC Half-Bridge Resonant Converter, Server and Telecom SMPS, Solar Inverter DC-DC Stage, Industrial Welding and Plasma Cutters, LED Driver SMPS.
Power Factor Correction (PFC) Boost Stage
The IPL65R230C7AUMA1 fits PFC boost stages in 400 V rectified-bus switch-mode power supplies because its 650 V VDS rating provides margin against line-side transient spikes on a universal 90 VAC to 264 VAC input, and its CoolMOS C7 superjunction architecture minimizes switching losses at typical 65 kHz to 130 kHz PFC frequencies. With a 230 mOhm maximum RDS(on) and 10 A continuous drain current at Tc, the part delivers conduction loss suitable for 300 W to 1000 W PFC stages. Placed between the bridge rectifier and the bulk capacitor in continuous-conduction-mode (CCM) PFC, the C7 generation's reduced Qgd and Qoss cut turn-on losses compared with older C3/C6 generations. Designers should keep the gate-drive loop compact and add a small RC snubber across drain-source if ringing exceeds 80% of VDS.
추천
LLC Half-Bridge Resonant Converter
The IPL65R230C7AUMA1 is well suited to the primary-side half-bridge position in LLC resonant converters used in server, telecom, and industrial SMPS. Its CoolMOS C7 technology reduces Eoss-related turn-on losses, which dominate efficiency in resonant topologies, while the 650 V VDS rating tolerates the resonant-tank overshoot above the 400 V bus. At a 230 mOhm RDS(on) and 10 A continuous drain current, the part comfortably drives 500 W to 800 W LLC stages when paired with an appropriate resonant tank and gate driver. Placed in the half-bridge leg with low-inductance gate-drive layout, the C7's fast body-diode reverse recovery further enables ZVS operation. According to Infineon application notes, C7-series MOSFETs are specifically recommended for hard-switched and resonant topologies above 100 kHz.
추천
Server and Telecom SMPS
The IPL65R230C7AUMA1 fits server and telecom silver-box SMPS where efficiency and thermal density are critical. With a 230 mOhm RDS(on) and a PG-VSON-4 exposed-pad package offering low thermal resistance, the MOSFET handles the continuous-conduction current of a 600 W to 1000 W PFC stage without external heatsinking, relying instead on PCB copper. The 650 V VDS rating exceeds the rectified 380 V PFC bus, providing avalanche headroom for transient events during hot-swap or input surge. CoolMOS C7's reduced switching losses also improve light-load efficiency, helping designs meet 80 PLUS Titanium or similar efficiency targets at 10% to 50% load. Place the gate driver within 10 mm of the gate pin to minimize parasitic inductance and ringing.
추천
Solar Inverter DC-DC Stage
The IPL65R230C7AUMA1 fits the boost or full-bridge stage of residential and small-commercial solar inverters where 600 V to 1000 V input is converted to a 400 V DC link or AC mains. The 650 V VDS rating tolerates inverter DC-link transients up to 1000 V input when used with a front-end buck stage, while the 230 mOhm RDS(on) minimizes conduction losses during MPPT operation at partial load. CoolMOS C7's high dv/dt immunity and integrated ESD diode simplify inverter designs subject to outdoor environmental stress. Placed in a totem-pole bridgeless PFC topology, the part's low Qrr body diode enables high-efficiency operation. The PG-VSON-4 surface-mount package suits high-density SMD inverter modules.
추천
Industrial Welding and Plasma Cutters
The IPL65R230C7AUMA1 suits industrial welding and plasma-cutter power stages where high peak currents and 650 V breakdown voltages are required. The 10 A continuous drain current at Tc, combined with a 67 W power dissipation rating and exposed-drain PG-VSON-4 package, enables reliable operation under repetitive surge loads typical of arc-strike events. CoolMOS C7's low on-resistance per package and rugged avalanche capability improve Mean Time Between Failures (MTBF) in demanding industrial environments. Placed in the inverter bridge of a 3-phase IGBT-replacement design, the C7 MOSFET operates at 20 kHz to 50 kHz, balancing switching loss with audible-noise considerations. According to the Infineon IPL65R230C7 datasheet, the part is rated for repetitive avalanche operation, supporting welding-load transients.
추천
LED Driver SMPS
The IPL65R230C7AUMA1 fits the primary-side switch of high-power LED driver SMPS for horticulture, street-lighting, and stadium lighting. With a 650 V VDS rating, the part tolerates the rectified 230 VAC mains and PFC bus voltage, while the 230 mOhm RDS(on) minimizes conduction losses during PWM dimming operation. CoolMOS C7's fast switching capability at 100 kHz to 200 kHz shrinks the transformer and output filter, reducing LED-driver size and cost. Placed in a flyback or LLC topology, the C7's low Qoss improves light-load efficiency and enables deeper PWM dimming ratios. According to the Infineon IPL65R230C7 datasheet, the integrated ESD diode on the gate pin reduces external protection component count.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPL65R230C7AUMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPL60R185P7AUMA1 | IPL65R190E6AUMA1 | IPD65R225C7ATMA1 | IPB65R225C7ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-VSON-4 | PG-VSON-4 | PG-VSON-4 | PG-TO-252 (DPAK) | PG-TO-263 (D2PAK) |
| VDS max | 650 V | 600 V | 650 V | 650 V | 650 V |
| RDS(on) max | 230 mOhm | 185 mOhm | 190 mOhm | 225 mOhm | 225 mOhm |
| Technology Series | CoolMOS C7 | CoolMOS P7 | CoolMOS E6 | CoolMOS C7 | CoolMOS C7 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount (DPAK) | Surface Mount (D2PAK) |
| Lifecycle Status | Active | Active | Obsolete | Active | Active |
주요 차별점
- CoolMOS C7 superjunction architecture (vs IPL60R185P7AUMA1 (CoolMOS P7))
- 650 V drain-source breakdown (vs IPL60R185P7AUMA1 (600 V))
- PG-VSON-4 compact surface-mount package (vs IPD65R225C7ATMA1 (PG-TO-252/DPAK))
설계 노트
The PG-VSON-4 drain pad is the primary thermal path; the PCB copper area on the drain pad must be sized to keep junction temperature below 125 C at full load. Estimated: at 67 W power dissipation and a typical theta_JA of 50 C/W on a 1 square inch copper pour, junction temperature rise is 3350 C above 25 C ambient - clearly the part will derate to far below 67 W in real designs; consult the datasheet's thermal-resistance curve for the actual footprint used. Keep the gate-drive loop (gate-driver output, gate resistor, gate-source pins) area below 0.5 square cm to minimize ringing and dv/dt-induced turn-on.
CoolMOS C7 series MOSFETs dissipate significant heat at full 10 A load when RDS(on) is high; thermal design should assume worst-case 230 mOhm at 125 C junction, not the 25 C spec. Use multiple thermal vias under the exposed drain pad to a bottom-side copper pour, and consider a topside copper spreader on the drain pad. Estimated: conduction loss at 10 A continuous drain current is I^2 * RDS(on) = 100 * 0.23 = 23 W, which is the dominant loss mechanism at low switching frequencies below 50 kHz.
Place a small RC snubber (e.g. 10 Ohm + 1 nF) across drain-source if the layout is not optimal, to damp high-frequency ringing caused by parasitic drain-source inductance. Use a separate gate-drive return path directly to the source pin rather than sharing the power-source return, to avoid ground-bounce-induced false turn-on. Keep high-side and low-side gate traces separated by at least 2 mm to prevent cross-conduction in half-bridge topologies.
Do not exceed the 650 V VDS rating, including all transient overshoot from the resonant tank or PFC bus. For LLC converters, overshoot can reach 1.3x the bus voltage, so a 600 V part would be marginal on a 400 V bus while the 650 V IPL65R230C7AUMA1 provides the necessary margin. According to the Infineon IPL65R230C7 datasheet, the part is rated for repetitive avalanche energy, but designers should still minimize avalanche stress to extend reliability.
규정 준수 정보
RoHS compliant and lead-free per Infineon product page. Halogen-free per Infineon product page. Not AEC-Q100 qualified - this is an industrial-grade part; for automotive applications, consult Infineon's automotive CoolMOS portfolio.
