IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
N.º de pieza: IS43QR16512B-062AABL ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.9 | $4.450,00 |
| 1.000 | $8.1 | $8.100,00 |
IS43QR16512B-062AABL Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It uses an 8n prefetch architecture, enabling high-speed data transfer while maintaining lower power consumption through a reduced supply voltage of 1.2V. DDR4 is the industry standard for main memory in servers, desktops, and embedded systems, offering improved speed, density, and reliability over previous generations.
Key features include a 1.2V power supply, 3200 MT/s data rate, 19ns tRCD (RAS-to-CAS delay), and a 96-ball TWBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is RoHS compliant and operates over a temperature range of 0°C to +95°C (case temperature).
The IS43QR16512B uses a high-speed CMOS process and an 8n prefetch architecture, which allows two data words to be transferred per clock cycle at the I/O pins. This design achieves high bandwidth while minimizing power consumption. The device includes a mode register for programming various operating modes, including burst length, CAS latency, and test modes. It also supports error correction code (ECC) for enhanced data integrity in critical applications.
Typical applications include high-performance servers, networking equipment (routers, switches), data centers, and industrial computing systems. The high density and speed make it suitable for memory-intensive tasks such as virtualization, real-time analytics, and high-frequency trading. Its low power consumption is beneficial for power-constrained embedded systems.
When designing with this DDR4 SDRAM, ensure proper signal integrity by maintaining controlled impedance traces and using appropriate termination. The device requires a stable 1.2V supply and a separate VTT termination voltage. Follow the manufacturer's layout guidelines for the 96-ball TWBGA package to minimize crosstalk and ensure reliable operation at 3200 MT/s.
Alternativas directas para IS43QR16512B-062AABL — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IS43QR16512B-062AABL (mismo factor de forma y huella) — difiere en Data Rate, Package, CAS Latency, Operating Temperature, Interface.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IS43QR16512B-062AABL-TR
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT40A512M16TB-062E
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$60 / unidad
Ver hoja de datos →K4A8G165WB-BCWE
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$6.55 / unidad
Ver hoja de datos →H5AN8G6NDJR
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$35 / unidad
Ver hoja de datos →AS4C512M16D4A-62BCN
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$7.2 / unidad
Ver hoja de datos →IS43QR16512B-062AABL Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Tamaño de memoria | 8 Gbit |
| Organización de memoria | 512M x 16 |
| Tensión de alimentación | 1.2 V |
| Velocidad de datos | 3200 MT/s |
| Latencia CAS | 22-22-22 |
| tRCD | 19 ns |
| Encapsulado | 96-TWBGA (7.5x13.5 mm) |
| Temperatura de funcionamiento | 0°C to +95°C (case) |
| RoHS | Compliant |
| Tipo de montaje | Surface Mount |
| Número de pines | 96 |
| Interfaz | POD (Pseudo Open Drain) |
| Clock Frequency | 1.6 GHz |
| Ancho del bus de datos | 16 bit |
Configuración de pines de IS43QR16512B-062AABL
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — I/O power supply |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — I/O ground |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
| Pin E1 | VDD — Power supply (1.2V) |
| Pin E2 | DQS0 — Data strobe 0 |
| Pin E3 | DQS0# — Data strobe 0 complement |
| Pin F1 | VSS — Ground |
| Pin F2 | DM0 — Data mask 0 |
| Pin F3 | VDDQ — I/O power supply |
| Pin G1 | A0 — Address input 0 |
| Pin G2 | A1 — Address input 1 |
| Pin G3 | A2 — Address input 2 |
| Pin H1 | A3 — Address input 3 |
| Pin H2 | A4 — Address input 4 |
| Pin H3 | A5 — Address input 5 |
| Pin J1 | A6 — Address input 6 |
| Pin J2 | A7 — Address input 7 |
| Pin J3 | A8 — Address input 8 |
| Pin K1 | A9 — Address input 9 |
| Pin K2 | A10/AP — Address input 10 / Auto-precharge |
| Pin K3 | A11 — Address input 11 |
| Pin L1 | A12 — Address input 12 |
| Pin L2 | A13 — Address input 13 |
| Pin L3 | A14 — Address input 14 |
| Pin M1 | BA0 — Bank address 0 |
| Pin M2 | BA1 — Bank address 1 |
| Pin M3 | BA2 — Bank address 2 |
| Pin N1 | BG0 — Bank group 0 |
| Pin N2 | BG1 — Bank group 1 |
| Pin N3 | VDD — Power supply (1.2V) |
| Pin P1 | CK — Clock input |
| Pin P2 | CK# — Clock input complement |
| Pin P3 | CKE — Clock enable |
| Pin R1 | CS# — Chip select |
| Pin R2 | ODT — On-die termination |
| Pin R3 | RAS# — Row address strobe |
| Pin T1 | CAS# — Column address strobe |
| Pin T2 | WE# — Write enable |
| Pin T3 | RESET# — Reset |
| Pin U1 | VSS — Ground |
| Pin U2 | VDDQ — I/O power supply |
| Pin U3 | VSSQ — I/O ground |
Aplicaciones típicas
IS43QR16512B-062AABL es adecuado para 6 aplicacións: High-Performance Servers, Networking Equipment, Data Centers, Industrial Computing, Telecommunications, Automotive Infotainment.
High-Performance Servers
The IS43QR16512B-062AABL provides 8Gb density and 3200 MT/s speed, making it ideal for server main memory. Its high bandwidth supports multi-core processors and virtualization workloads. The 1.2V supply reduces power consumption in data centers, and the 96-ball TWBGA package enables high-density board designs. With a CAS latency of 22-22-22, it balances speed and latency for enterprise applications.
Recomendado
Networking Equipment
In routers and switches, the IS43QR16512B-062AABL offers high-speed data buffering and packet processing. Its 3200 MT/s data rate ensures low latency for network traffic, while the 8Gb capacity supports large routing tables and flow caches. The 1.2V operation minimizes heat generation in compact chassis, and the TWBGA package allows for space-efficient layouts. This DDR4 SDRAM is essential for maintaining throughput in 100GbE and higher systems.
Recomendado
Data Centers
The IS43QR16512B-062AABL is suited for data center applications requiring high memory bandwidth and capacity. Its 8Gb density and 3200 MT/s speed support large-scale data analytics, cloud computing, and AI workloads. The low 1.2V supply reduces power and cooling costs, while the 96-ball TWBGA package enables high-density DIMM designs. With a case temperature range up to 95°C, it can operate reliably in dense server environments.
Recomendado
Industrial Computing
For industrial PCs and embedded systems, the IS43QR16512B-062AABL provides reliable memory with a wide temperature range (0°C to +95°C). Its 8Gb capacity and 3200 MT/s speed handle real-time control and data acquisition. The 1.2V supply is compatible with industrial power rails, and the TWBGA package withstands vibration and thermal cycling. This DDR4 SDRAM is ideal for factory automation, robotics, and test equipment.
Recomendado
Telecommunications
In telecom infrastructure, the IS43QR16512B-062AABL supports high-speed signal processing and buffering. Its 3200 MT/s data rate enables efficient handling of voice, video, and data traffic. The 8Gb density provides ample storage for call records and network management data. The 1.2V supply reduces power consumption in base stations and switches, and the TWBGA package is suitable for compact line cards.
Recomendado
Automotive Infotainment
The IS43QR16512B-062AABL can be used in automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. Its 8Gb capacity and 3200 MT/s speed support smooth graphics and fast data access. The 1.2V supply is efficient for automotive power systems, and the TWBGA package is robust for under-hood or cabin environments. However, for automotive-grade (AEC-Q100) requirements, consider ISSI's automotive-qualified variants.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IS43QR16512B-062AABL — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IS43QR16512B-062AABL-TR | MT40A512M16TB-062E | K4A8G165WB-BCWE | H5AN8G6NDJR | AS4C512M16D4A-62BCN |
|---|---|---|---|---|---|---|
| Package | 96-TWBGA (7.5x13.5 mm) | 96-TWBGA (7.5x13.5 mm) | 96-TWBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) |
| Brand | ISSI | ISSI | Micron | Samsung | SK Hynix | Alliance Memory |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| CAS Latency | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C (industrial) |
Diferenciadores clave
- ISSI brand reliability and supply chain security (frente a MT40A512M16TB-062E)
- Industrial temperature grade option (frente a MT40A512M16TB-062E)
- Pin-compatible with major brands (frente a K4A8G165WB-BCWE)
Notas de diseño
For reliable operation at 3200 MT/s, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command traces. Use a 4-layer or more PCB with solid ground and power planes. Keep trace lengths matched within +/- 10 mils for data groups to minimize skew. Follow JEDEC DDR4 layout guidelines for the 96-ball TWBGA package.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the balls. Use a dedicated 1.2V power plane and a separate VTT termination voltage (0.6V) for the address/command bus. Ensure the power supply can handle peak current spikes during refresh and burst operations.
The maximum case temperature is 95°C. For high-density DIMMs, ensure adequate airflow or heatsinking. The TWBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Monitor the case temperature in high-ambient environments to avoid exceeding the limit.
Información de cumplimiento
RoHS compliant per Mouser and DigiKey listings. No AEC-Q100 qualification for this standard part.
