IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
料号： IS43QR16512B-062AABL ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.9 | $4,450.00 |
| 1,000 | $8.1 | $8,100.00 |
IS43QR16512B-062AABL 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It uses an 8n prefetch architecture, enabling high-speed data transfer while maintaining lower power consumption through a reduced supply voltage of 1.2V. DDR4 is the industry standard for main memory in servers, desktops, and embedded systems, offering improved speed, density, and reliability over previous generations.
Key features include a 1.2V power supply, 3200 MT/s data rate, 19ns tRCD (RAS-to-CAS delay), and a 96-ball TWBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is RoHS compliant and operates over a temperature range of 0°C to +95°C (case temperature).
The IS43QR16512B uses a high-speed CMOS process and an 8n prefetch architecture, which allows two data words to be transferred per clock cycle at the I/O pins. This design achieves high bandwidth while minimizing power consumption. The device includes a mode register for programming various operating modes, including burst length, CAS latency, and test modes. It also supports error correction code (ECC) for enhanced data integrity in critical applications.
Typical applications include high-performance servers, networking equipment (routers, switches), data centers, and industrial computing systems. The high density and speed make it suitable for memory-intensive tasks such as virtualization, real-time analytics, and high-frequency trading. Its low power consumption is beneficial for power-constrained embedded systems.
When designing with this DDR4 SDRAM, ensure proper signal integrity by maintaining controlled impedance traces and using appropriate termination. The device requires a stable 1.2V supply and a separate VTT termination voltage. Follow the manufacturer's layout guidelines for the 96-ball TWBGA package to minimize crosstalk and ensure reliable operation at 3200 MT/s.
直接替换替代料： IS43QR16512B-062AABL ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IS43QR16512B-062AABL （相同外形与封装尺寸） ——差异在于 Data Rate, Package, CAS Latency, Operating Temperature, Interface.
快速对比工具——选择替代料号进行并排对比：
IS43QR16512B-062AABL-TR
✅ 直接替换📋 参考替代料（不在目录中）
MT40A512M16TB-062E
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$60 / 个
查看数据手册 →K4A8G165WB-BCWE
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.55 / 个
查看数据手册 →H5AN8G6NDJR
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$35 / 个
查看数据手册 →AS4C512M16D4A-62BCN
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$7.2 / 个
查看数据手册 →IS43QR16512B-062AABL 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| 存储容量 | 8 Gbit |
| 存储组织 | 512M x 16 |
| 电源电压 | 1.2 V |
| 数据速率 | 3200 MT/s |
| CAS 延迟 | 22-22-22 |
| tRCD | 19 ns |
| 封装 | 96-TWBGA (7.5x13.5 mm) |
| 工作温度 | 0°C to +95°C (case) |
| RoHS | Compliant |
| 安装类型 | Surface Mount |
| 引脚数 | 96 |
| 接口 | POD (Pseudo Open Drain) |
| Clock Frequency | 1.6 GHz |
| 数据总线宽度 | 16 bit |
IS43QR16512B-062AABL 引脚配置
| 引脚 A1 | VDD — Power supply (1.2V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ2 — Data input/output 2 |
| 引脚 B3 | DQ3 — Data input/output 3 |
| 引脚 C1 | VDDQ — I/O power supply |
| 引脚 C2 | DQ4 — Data input/output 4 |
| 引脚 C3 | DQ5 — Data input/output 5 |
| 引脚 D1 | VSSQ — I/O ground |
| 引脚 D2 | DQ6 — Data input/output 6 |
| 引脚 D3 | DQ7 — Data input/output 7 |
| 引脚 E1 | VDD — Power supply (1.2V) |
| 引脚 E2 | DQS0 — Data strobe 0 |
| 引脚 E3 | DQS0# — Data strobe 0 complement |
| 引脚 F1 | VSS — Ground |
| 引脚 F2 | DM0 — Data mask 0 |
| 引脚 F3 | VDDQ — I/O power supply |
| 引脚 G1 | A0 — Address input 0 |
| 引脚 G2 | A1 — Address input 1 |
| 引脚 G3 | A2 — Address input 2 |
| 引脚 H1 | A3 — Address input 3 |
| 引脚 H2 | A4 — Address input 4 |
| 引脚 H3 | A5 — Address input 5 |
| 引脚 J1 | A6 — Address input 6 |
| 引脚 J2 | A7 — Address input 7 |
| 引脚 J3 | A8 — Address input 8 |
| 引脚 K1 | A9 — Address input 9 |
| 引脚 K2 | A10/AP — Address input 10 / Auto-precharge |
| 引脚 K3 | A11 — Address input 11 |
| 引脚 L1 | A12 — Address input 12 |
| 引脚 L2 | A13 — Address input 13 |
| 引脚 L3 | A14 — Address input 14 |
| 引脚 M1 | BA0 — Bank address 0 |
| 引脚 M2 | BA1 — Bank address 1 |
| 引脚 M3 | BA2 — Bank address 2 |
| 引脚 N1 | BG0 — Bank group 0 |
| 引脚 N2 | BG1 — Bank group 1 |
| 引脚 N3 | VDD — Power supply (1.2V) |
| 引脚 P1 | CK — Clock input |
| 引脚 P2 | CK# — Clock input complement |
| 引脚 P3 | CKE — Clock enable |
| 引脚 R1 | CS# — Chip select |
| 引脚 R2 | ODT — On-die termination |
| 引脚 R3 | RAS# — Row address strobe |
| 引脚 T1 | CAS# — Column address strobe |
| 引脚 T2 | WE# — Write enable |
| 引脚 T3 | RESET# — Reset |
| 引脚 U1 | VSS — Ground |
| 引脚 U2 | VDDQ — I/O power supply |
| 引脚 U3 | VSSQ — I/O ground |
典型应用
IS43QR16512B-062AABL 适用于 6 应用s: High-Performance Servers, Networking Equipment, Data Centers, Industrial Computing, Telecommunications, Automotive Infotainment.
High-Performance Servers
The IS43QR16512B-062AABL provides 8Gb density and 3200 MT/s speed, making it ideal for server main memory. Its high bandwidth supports multi-core processors and virtualization workloads. The 1.2V supply reduces power consumption in data centers, and the 96-ball TWBGA package enables high-density board designs. With a CAS latency of 22-22-22, it balances speed and latency for enterprise applications.
推荐
Networking Equipment
In routers and switches, the IS43QR16512B-062AABL offers high-speed data buffering and packet processing. Its 3200 MT/s data rate ensures low latency for network traffic, while the 8Gb capacity supports large routing tables and flow caches. The 1.2V operation minimizes heat generation in compact chassis, and the TWBGA package allows for space-efficient layouts. This DDR4 SDRAM is essential for maintaining throughput in 100GbE and higher systems.
推荐
Data Centers
The IS43QR16512B-062AABL is suited for data center applications requiring high memory bandwidth and capacity. Its 8Gb density and 3200 MT/s speed support large-scale data analytics, cloud computing, and AI workloads. The low 1.2V supply reduces power and cooling costs, while the 96-ball TWBGA package enables high-density DIMM designs. With a case temperature range up to 95°C, it can operate reliably in dense server environments.
推荐
Industrial Computing
For industrial PCs and embedded systems, the IS43QR16512B-062AABL provides reliable memory with a wide temperature range (0°C to +95°C). Its 8Gb capacity and 3200 MT/s speed handle real-time control and data acquisition. The 1.2V supply is compatible with industrial power rails, and the TWBGA package withstands vibration and thermal cycling. This DDR4 SDRAM is ideal for factory automation, robotics, and test equipment.
推荐
Telecommunications
In telecom infrastructure, the IS43QR16512B-062AABL supports high-speed signal processing and buffering. Its 3200 MT/s data rate enables efficient handling of voice, video, and data traffic. The 8Gb density provides ample storage for call records and network management data. The 1.2V supply reduces power consumption in base stations and switches, and the TWBGA package is suitable for compact line cards.
推荐
Automotive Infotainment
The IS43QR16512B-062AABL can be used in automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. Its 8Gb capacity and 3200 MT/s speed support smooth graphics and fast data access. The 1.2V supply is efficient for automotive power systems, and the TWBGA package is robust for under-hood or cabin environments. However, for automotive-grade (AEC-Q100) requirements, consider ISSI's automotive-qualified variants.
推荐
推荐产品汇总
工程参考数据： IS43QR16512B-062AABL ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IS43QR16512B-062AABL-TR | MT40A512M16TB-062E | K4A8G165WB-BCWE | H5AN8G6NDJR | AS4C512M16D4A-62BCN |
|---|---|---|---|---|---|---|
| Package | 96-TWBGA (7.5x13.5 mm) | 96-TWBGA (7.5x13.5 mm) | 96-TWBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) |
| Brand | ISSI | ISSI | Micron | Samsung | SK Hynix | Alliance Memory |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| CAS Latency | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C (industrial) |
关键差异点
- ISSI brand reliability and supply chain security （对比 MT40A512M16TB-062E)
- Industrial temperature grade option （对比 MT40A512M16TB-062E)
- Pin-compatible with major brands （对比 K4A8G165WB-BCWE)
设计说明
For reliable operation at 3200 MT/s, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command traces. Use a 4-layer or more PCB with solid ground and power planes. Keep trace lengths matched within +/- 10 mils for data groups to minimize skew. Follow JEDEC DDR4 layout guidelines for the 96-ball TWBGA package.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the balls. Use a dedicated 1.2V power plane and a separate VTT termination voltage (0.6V) for the address/command bus. Ensure the power supply can handle peak current spikes during refresh and burst operations.
The maximum case temperature is 95°C. For high-density DIMMs, ensure adequate airflow or heatsinking. The TWBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Monitor the case temperature in high-ambient environments to avoid exceeding the limit.
合规信息
RoHS compliant per Mouser and DigiKey listings. No AEC-Q100 qualification for this standard part.
