IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
Référence : IS43QR16512B-062AABL ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.9 | $4 450,00 |
| 1 000 | $8.1 | $8 100,00 |
IS43QR16512B-062AABL Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It uses an 8n prefetch architecture, enabling high-speed data transfer while maintaining lower power consumption through a reduced supply voltage of 1.2V. DDR4 is the industry standard for main memory in servers, desktops, and embedded systems, offering improved speed, density, and reliability over previous generations.
Key features include a 1.2V power supply, 3200 MT/s data rate, 19ns tRCD (RAS-to-CAS delay), and a 96-ball TWBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is RoHS compliant and operates over a temperature range of 0°C to +95°C (case temperature).
The IS43QR16512B uses a high-speed CMOS process and an 8n prefetch architecture, which allows two data words to be transferred per clock cycle at the I/O pins. This design achieves high bandwidth while minimizing power consumption. The device includes a mode register for programming various operating modes, including burst length, CAS latency, and test modes. It also supports error correction code (ECC) for enhanced data integrity in critical applications.
Typical applications include high-performance servers, networking equipment (routers, switches), data centers, and industrial computing systems. The high density and speed make it suitable for memory-intensive tasks such as virtualization, real-time analytics, and high-frequency trading. Its low power consumption is beneficial for power-constrained embedded systems.
When designing with this DDR4 SDRAM, ensure proper signal integrity by maintaining controlled impedance traces and using appropriate termination. The device requires a stable 1.2V supply and a separate VTT termination voltage. Follow the manufacturer's layout guidelines for the 96-ball TWBGA package to minimize crosstalk and ensure reliable operation at 3200 MT/s.
Alternatives de remplacement direct pour IS43QR16512B-062AABL — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IS43QR16512B-062AABL (même facteur de forme et même empreinte) — différant par Data Rate, Package, CAS Latency, Operating Temperature, Interface.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IS43QR16512B-062AABL-TR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A512M16TB-062E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$60 / unité
Voir la fiche technique →K4A8G165WB-BCWE
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.55 / unité
Voir la fiche technique →H5AN8G6NDJR
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$35 / unité
Voir la fiche technique →AS4C512M16D4A-62BCN
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$7.2 / unité
Voir la fiche technique →IS43QR16512B-062AABL Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Taille de mémoire | 8 Gbit |
| Organisation de la mémoire | 512M x 16 |
| Tension d'alimentation | 1.2 V |
| Débit de données | 3200 MT/s |
| Latence CAS | 22-22-22 |
| tRCD | 19 ns |
| Boîtier | 96-TWBGA (7.5x13.5 mm) |
| Température de fonctionnement | 0°C to +95°C (case) |
| RoHS | Compliant |
| Type de montage | Surface Mount |
| Nombre de broches | 96 |
| Interface | POD (Pseudo Open Drain) |
| Clock Frequency | 1.6 GHz |
| Largeur du bus de données | 16 bit |
Configuration des broches de IS43QR16512B-062AABL
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
| Broche E1 | VDD — Power supply (1.2V) |
| Broche E2 | DQS0 — Data strobe 0 |
| Broche E3 | DQS0# — Data strobe 0 complement |
| Broche F1 | VSS — Ground |
| Broche F2 | DM0 — Data mask 0 |
| Broche F3 | VDDQ — I/O power supply |
| Broche G1 | A0 — Address input 0 |
| Broche G2 | A1 — Address input 1 |
| Broche G3 | A2 — Address input 2 |
| Broche H1 | A3 — Address input 3 |
| Broche H2 | A4 — Address input 4 |
| Broche H3 | A5 — Address input 5 |
| Broche J1 | A6 — Address input 6 |
| Broche J2 | A7 — Address input 7 |
| Broche J3 | A8 — Address input 8 |
| Broche K1 | A9 — Address input 9 |
| Broche K2 | A10/AP — Address input 10 / Auto-precharge |
| Broche K3 | A11 — Address input 11 |
| Broche L1 | A12 — Address input 12 |
| Broche L2 | A13 — Address input 13 |
| Broche L3 | A14 — Address input 14 |
| Broche M1 | BA0 — Bank address 0 |
| Broche M2 | BA1 — Bank address 1 |
| Broche M3 | BA2 — Bank address 2 |
| Broche N1 | BG0 — Bank group 0 |
| Broche N2 | BG1 — Bank group 1 |
| Broche N3 | VDD — Power supply (1.2V) |
| Broche P1 | CK — Clock input |
| Broche P2 | CK# — Clock input complement |
| Broche P3 | CKE — Clock enable |
| Broche R1 | CS# — Chip select |
| Broche R2 | ODT — On-die termination |
| Broche R3 | RAS# — Row address strobe |
| Broche T1 | CAS# — Column address strobe |
| Broche T2 | WE# — Write enable |
| Broche T3 | RESET# — Reset |
| Broche U1 | VSS — Ground |
| Broche U2 | VDDQ — I/O power supply |
| Broche U3 | VSSQ — I/O ground |
Applications typiques
IS43QR16512B-062AABL convient pour 6 applications: High-Performance Servers, Networking Equipment, Data Centers, Industrial Computing, Telecommunications, Automotive Infotainment.
High-Performance Servers
The IS43QR16512B-062AABL provides 8Gb density and 3200 MT/s speed, making it ideal for server main memory. Its high bandwidth supports multi-core processors and virtualization workloads. The 1.2V supply reduces power consumption in data centers, and the 96-ball TWBGA package enables high-density board designs. With a CAS latency of 22-22-22, it balances speed and latency for enterprise applications.
Recommandé
Networking Equipment
In routers and switches, the IS43QR16512B-062AABL offers high-speed data buffering and packet processing. Its 3200 MT/s data rate ensures low latency for network traffic, while the 8Gb capacity supports large routing tables and flow caches. The 1.2V operation minimizes heat generation in compact chassis, and the TWBGA package allows for space-efficient layouts. This DDR4 SDRAM is essential for maintaining throughput in 100GbE and higher systems.
Recommandé
Data Centers
The IS43QR16512B-062AABL is suited for data center applications requiring high memory bandwidth and capacity. Its 8Gb density and 3200 MT/s speed support large-scale data analytics, cloud computing, and AI workloads. The low 1.2V supply reduces power and cooling costs, while the 96-ball TWBGA package enables high-density DIMM designs. With a case temperature range up to 95°C, it can operate reliably in dense server environments.
Recommandé
Industrial Computing
For industrial PCs and embedded systems, the IS43QR16512B-062AABL provides reliable memory with a wide temperature range (0°C to +95°C). Its 8Gb capacity and 3200 MT/s speed handle real-time control and data acquisition. The 1.2V supply is compatible with industrial power rails, and the TWBGA package withstands vibration and thermal cycling. This DDR4 SDRAM is ideal for factory automation, robotics, and test equipment.
Recommandé
Telecommunications
In telecom infrastructure, the IS43QR16512B-062AABL supports high-speed signal processing and buffering. Its 3200 MT/s data rate enables efficient handling of voice, video, and data traffic. The 8Gb density provides ample storage for call records and network management data. The 1.2V supply reduces power consumption in base stations and switches, and the TWBGA package is suitable for compact line cards.
Recommandé
Automotive Infotainment
The IS43QR16512B-062AABL can be used in automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. Its 8Gb capacity and 3200 MT/s speed support smooth graphics and fast data access. The 1.2V supply is efficient for automotive power systems, and the TWBGA package is robust for under-hood or cabin environments. However, for automotive-grade (AEC-Q100) requirements, consider ISSI's automotive-qualified variants.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IS43QR16512B-062AABL — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IS43QR16512B-062AABL-TR | MT40A512M16TB-062E | K4A8G165WB-BCWE | H5AN8G6NDJR | AS4C512M16D4A-62BCN |
|---|---|---|---|---|---|---|
| Package | 96-TWBGA (7.5x13.5 mm) | 96-TWBGA (7.5x13.5 mm) | 96-TWBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) |
| Brand | ISSI | ISSI | Micron | Samsung | SK Hynix | Alliance Memory |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| CAS Latency | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C (industrial) |
Principaux différenciateurs
- ISSI brand reliability and supply chain security (vs MT40A512M16TB-062E)
- Industrial temperature grade option (vs MT40A512M16TB-062E)
- Pin-compatible with major brands (vs K4A8G165WB-BCWE)
Notes de conception
For reliable operation at 3200 MT/s, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command traces. Use a 4-layer or more PCB with solid ground and power planes. Keep trace lengths matched within +/- 10 mils for data groups to minimize skew. Follow JEDEC DDR4 layout guidelines for the 96-ball TWBGA package.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the balls. Use a dedicated 1.2V power plane and a separate VTT termination voltage (0.6V) for the address/command bus. Ensure the power supply can handle peak current spikes during refresh and burst operations.
The maximum case temperature is 95°C. For high-density DIMMs, ensure adequate airflow or heatsinking. The TWBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Monitor the case temperature in high-ambient environments to avoid exceeding the limit.
Informations de conformité
RoHS compliant per Mouser and DigiKey listings. No AEC-Q100 qualification for this standard part.
