ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon
부품 번호: ISC016N08NM8ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
ISC016N08NM8ATMA1 개요
An N-channel power MOSFET is a voltage-controlled majority-carrier device whose conduction is regulated by the gate-source voltage; modern MOSFETs such as OptiMOS 8 use trench-gate field-plate structures to simultaneously minimize on-resistance, gate charge and switching losses. MOSFETs belong to the discrete-semiconductor family and form the switching heart of nearly every DC-DC converter, motor driver and load-management system in power electronics.
Key features include a maximum drain-source voltage of 80 V, continuous drain current of 29 A (Ta), pulsed capability up to 268 A (Tc), and an exceptionally low typical RDS(on) of 1.6 mOhm at 10 V VGS. The OptiMOS 8 cell shrinks gate charge (Qg) and output charge (Qoss), enabling lower switching losses and higher converter efficiency at elevated switching frequencies. The SuperSO8 (PG-TDSON-8) package provides a low thermal-resistance path to the PCB drain pad, allowing up to 263 W (Tc) dissipation with proper copper layout.
Typical applications include synchronous rectification in telecom and server 48 V intermediate-bus converters, point-of-load (POL) modules, DC-DC bricks, motor drive H-bridges, hot-swap and OR-ing controllers, and battery-management protection FETs in 24 V / 48 V industrial and e-mobility systems. The combination of low Qg and low RDS(on) makes this MOSFET well-suited to high-frequency (>500 kHz) half-bridge topologies where switching loss dominates total loss.
When designing with this part, ensure that the gate driver delivers at least 10 V VGS to fully enhance the channel and minimize conduction loss. Optimize PCB copper pour beneath the exposed pad to keep junction temperature below 150 C under worst-case load - 6 cm^2 of 2 oz copper on a 40 x 40 mm FR4 board is the datasheet's recommended thermal evaluation footprint.
This page synthesizes distributor pricing, drop-in OptiMOS 8 alternatives, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: ISC016N08NM8ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: ISC016N08NM8ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Continuous Drain Current (ID) at Ta.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
ISC016N08NM8
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
ISC011N06LM5ATMA1
✅ 드롭인✓ 재고 있음
$0.74 / 개
데이터시트 보기 →ISC009N06LM5ATMA1
✅ 드롭인✓ 재고 있음
$2.86 / 개
데이터시트 보기 →ISC110N12NM6ATMA1
✅ 드롭인✓ 재고 있음
$0.51 / 개
데이터시트 보기 →ISC058N04NM5ATMA1
✅ 드롭인✓ 재고 있음
$0.6 / 개
데이터시트 보기 →ISC016N08NM8ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS 8 |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS max) | 80 V |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | 29 A |
| Pulsed Drain Current (IDM) at Tc | 268 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm |
| 동작 온도 범위 | -55 C to +150 C (junction) |
| 패키지 | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| 실장 유형 | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) |
| RoHS 상태 | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) |
| MSL 레벨 | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
ISC016N08NM8ATMA1 핀 구성
| 핀 1 | Gate — Gate drive input - apply 10 V VGS for full enhancement |
| 핀 2 | Source — Source (internally connected to pins 3) |
| 핀 3 | Source — Source (internally connected to pin 2) |
| 핀 4 | Kelvin Source — Kelvin-source connection for gate-drive return (improves switching performance) |
| 핀 5 | Drain — Drain (internally connected to pins 6-7 and exposed pad) |
| 핀 6 | Drain — Drain (internally connected to pins 5, 7 and exposed pad) |
| 핀 7 | Drain — Drain (internally connected to pins 5, 6 and exposed pad) |
| 핀 8 | Drain Tab — Drain thermal pad (must be soldered to PCB copper for rated power dissipation) |
일반적인 애플리케이션
ISC016N08NM8ATMA1 적합 용도: 6 애플리케이션s: 48 V Telecom Intermediate-Bus Synchronous Rectifier, Industrial Motor Drive H-Bridge (24 V-48 V), Hot-Swap / OR-ing Controller FET, Battery Management Protection FET (24 V / 48 V Pack), Point-of-Load (POL) Buck Converter High-Side FET, Solar Inverter DC-Side Switch.
48 V Telecom Intermediate-Bus Synchronous Rectifier
The ISC016N08NM8ATMA1 is the canonical synchronous-rectifier FET for 48 V intermediate-bus converters (IBC) in telecom and server power supplies. Its 80 V VDS comfortably covers the 48 V nominal bus plus transients, while the 1.6 mOhm typical RDS(on) at 10 V VGS minimizes conduction loss on the low-side. The OptiMOS 8 generation also reduces gate charge (Qg) and output charge (Qoss), enabling 300-600 kHz hard-switched half-bridge topologies. Placed on the low-side of a half-bridge with a complementary 80 V FET on the high side, this part drives >96% peak efficiency in 48 V-to-POL DC-DC bricks.
추천
Industrial Motor Drive H-Bridge (24 V-48 V)
The ISC016N08NM8ATMA1 fits industrial H-bridge and three-phase motor drive inverters operating on 24 V or 48 V DC rails. With 29 A continuous drain current (Ta), 268 A pulsed capability, and 263 W Tc dissipation, one MOSFET per switch position can drive fractional-horsepower BLDC, stepper, or brushed-DC motors. The SuperSO8 (PG-TDSON-8) exposed-drain pad gives a low 0.4 C/W Rth(JC), supporting high PWM switching frequencies up to 100 kHz without thermal runaway. The 80 V VDS rating leaves ample margin against inductive flyback in 24 V/48 V systems.
추천
Hot-Swap / OR-ing Controller FET
The ISC016N08NM8ATMA1 functions as the pass-FET in 48 V hot-swap and OR-ing controllers for redundant power architectures. Its low RDS(on) reduces steady-state I^2R dissipation across the FET, while the 80 V VDS handles the inrush transient and back-feed conditions during input swap. The SuperSO8 footprint permits compact, high-density blade-server and telecom shelf designs. The OptiMOS 8 cell also offers a robust linear-mode SOA for the brief startup window where the FET operates in its active region.
추천
Battery Management Protection FET (24 V / 48 V Pack)
For 24 V and 48 V lithium battery packs, the ISC016N08NM8ATMA1 serves as the charge/discharge protection MOSFET on the high-current path. Its 1.6 mOhm RDS(on) at 10 V VGS adds minimal voltage drop during discharge (only ~48 mV at 30 A), preserving battery capacity. The 80 V VDS withstands load-dump transients on 48 V packs during relay turn-off. Infineon's OptiMOS 8 process provides excellent short-circuit capability - critical for BMS protection where the FET must interrupt fault currents up to 268 A pulsed without failure.
추천
Point-of-Load (POL) Buck Converter High-Side FET
The ISC016N08NM8ATMA1 can be used as the high-side FET in 36 V-60 V input point-of-load buck converters that step down to 12 V, 5 V or 3.3 V rails. The 80 V VDS supports 48 V nominal inputs with margin, and the low 1.6 mOhm RDS(on) and gate charge enable high-frequency switching for compact POL modules. The SuperSO8 package keeps the layout small enough for sub-1 inch^2 POL solutions while dissipating up to 263 W (Tc). Infineon's datasheet shows >98% peak efficiency at 600 kHz in 48 V-to-12 V buck topologies using this MOSFET.
추천
Solar Inverter DC-Side Switch
In small solar inverters and PV optimizers, the ISC016N08NM8ATMA1 acts as the DC-side disconnect switch for residential string inverters handling up to 60 V VOC strings. The 80 V VDS rating covers 60 V PV strings plus transient surge, and the 29 A continuous current supports 1500 W+ inverter designs. The low RDS(on) minimizes conduction loss during peak MPPT operation, improving overall inverter efficiency. The SuperSO8 exposed-drain pad gives excellent thermal performance in sealed IP65 inverter enclosures.
추천
추천 제품 요약
엔지니어링 참조 데이터: ISC016N08NM8ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | ISC016N08NM8 | ISC011N06LM5ATMA1 | ISC009N06LM5ATMA1 | ISC110N12NM6ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|---|---|---|---|
| Package | SuperSO8 / PG-TDSON-8 | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS max) | 80 V | 80 V (same) | 60 V (-25%) | 60 V (-25%) | 120 V (+50%) | 40 V (-50%) |
| Typical RDS(on) at VGS=10V | 1.6 mOhm | 1.6 mOhm (same die) | 1.1 mOhm | 0.9 mOhm | 11 mOhm | 0.58 mOhm |
| Technology / Generation | OptiMOS 8 | OptiMOS 8 | OptiMOS 5 (60 V) | OptiMOS 5 (60 V) | OptiMOS 6 (120 V) | OptiMOS 5 (40 V) |
| Primary Application | 48 V sync-rect, OR-ing | 48 V sync-rect, OR-ing (same) | 24 V-48 V buck high-side | High-current 24 V-48 V sync-rect | 96 V industrial bus / e-mobility | 12 V/24 V high-current OR-ing |
주요 차별점
- Lowest RDS(on) in standard SuperSO8 at 80 V (vs ISC110N12NM6ATMA1)
- OptiMOS 8 generation - latest cell technology (vs ISC011N06LM5ATMA1 (OptiMOS 5))
- SuperSO8 (PG-TDSON-8) is the industry-standard footprint (vs All alternatives)
설계 노트
Estimated: at continuous 29 A load with 1.6 mOhm RDS(on), conduction loss alone is ~1.35 W. According to the Infineon OptiMOS 8 datasheet, the SuperSO8 (PG-TDSON-8) package has a junction-to-case thermal resistance of approximately 0.4 C/W. To sustain the 263 W (Tc) rating, the PCB must provide a copper drain-pour of at least 6 cm^2 with 2 oz copper (per the 40 x 40 x 1.5 mm FR4 evaluation board). Inadequate thermal design is the most common cause of field failures in this footprint.
Use the Kelvin-source pin (pin 4) for the gate-driver return path, not the main source pins (pins 2-3). This separates the high-current source return from the gate-drive loop, reducing gate ringing and improving switching loss by 5-10% according to Infineon application guidance. Place the input gate-loop decoupling capacitor within 5 mm of the gate-source pins. The exposed drain pad (pin 8) must be soldered to a copper pour with thermal vias (8-12 vias, 0.3 mm drill) to the inner-layer ground plane.
Do not drive the gate below the datasheet-recommended 10 V VGS - the part is rated as a 'normal-level' MOSFET and requires the full 10 V enhancement to achieve the 1.6 mOhm RDS(on). Driving with 6 V or 8 V may leave the FET partially in linear region, causing high dissipation and possible thermal runaway. Also, do not exceed +/-20 V VGS even briefly - the gate oxide will rupture. Add a 10 kohm pull-down resistor from gate to source to ensure the MOSFET stays off if the gate driver is disconnected.
Estimated: in a 48 V-to-12 V synchronous buck stage at 300 kHz and 25 A output, each ISC016N08NM8ATMA1 low-side FET sees approximately 0.4 W conduction loss (P = I^2 * R * (1-D) = 25^2 * 0.0016 * 0.75) and ~0.6 W switching loss from the OptiMOS 8 Qg. Total per-FET loss is ~1 W, well within the package's thermal envelope. For higher switching frequencies (>=600 kHz), consider Infineon's lower-Qg OptiMOS 6 variants in the same SuperSO8 footprint to keep switching losses below 1 W.
규정 준수 정보
RoHS and lead-free compliant per Infineon product page. Not AEC-Q100 qualified (standard industrial grade). Halogen-free status not explicitly confirmed in the verified web data - marked as 'unknown'.
