ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
부품 번호: ISC058N04NM5ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.85 | $8.50 |
| 100 | $0.75 | $75.00 |
| 500 | $0.68 | $340.00 |
| 1,000 | $0.6 | $600.00 |
ISC058N04NM5ATMA1 개요
A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between drain and source. Within the broader taxonomy, the ISC058N04NM5ATMA1 belongs to N-channel enhancement-mode MOSFETs -> power MOSFETs -> discrete semiconductors. The OptiMOS 5 process from Infineon uses trench-gate technology to minimize Rds(on) x Qg figure-of-merit, which directly translates into lower conduction and switching losses in SMPS, BLDC, and OR-ing applications.
Key specifications include VDS = 40V, Rds(on) max = 5.8 mOhm at VGS = 10V and ID = 31A, ID max = 63A at TC, VGS(th) = 3.4V (typical/normal level), and a SuperSO8 5x6 exposed-pad package for low thermal resistance. The lead-free, RoHS-compliant, MSL-rated part ships in Tape & Reel (T&R) and is qualified for industrial and consumer power-conversion designs.
Typical applications include synchronous rectification in 12V-24V DC-DC converters, BLDC motor drives, battery management systems (BMS), load switching in power distribution, and high-current USB-PD power paths. The SuperSO8 footprint is widely second-sourced, simplifying multi-vendor sourcing. When designing with this device, ensure the gate-drive voltage is at least 10V for full enhancement, place the gate-source resistor close to the GS pins to prevent inadvertent turn-on from dv/dt, and verify SOA at the operating point using the datasheet curves.
드롭인 대체품: ISC058N04NM5ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: ISC058N04NM5ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
ISC015N04NM5ATMA1
✅ 드롭인✓ 재고 있음
$0.98 / 개
데이터시트 보기 →BSC059N04LSGATMA1
✅ 드롭인✓ 재고 있음
$0.39 / 개
데이터시트 보기 →BSZ024N04LS6ATMA1
✅ 드롭인✓ 재고 있음
$0.46 / 개
데이터시트 보기 →BSC040N08NS5ATMA1
✅ 드롭인✓ 재고 있음
$1.15 / 개
데이터시트 보기 →BSC0902NSATMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →ISC058N04NM5ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 40V Normal Level |
| 트랜지스터 유형 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 63 A |
| Continuous Drain Current (ID, Ta=25C) | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | 3.4 V |
| Power Dissipation (TA=25C) | 3 W |
| Power Dissipation (TC=25C) | 42 W |
| 패키지 | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET |
| 동작 온도 범위 | -55C to +175C |
| RoHS Compliance | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 |
| Gate Drive Level | Normal Level (10V VGS recommended) |
ISC058N04NM5ATMA1 핀 구성
| 핀 1 | S — Source |
| 핀 2 | S — Source |
| 핀 3 | S — Source |
| 핀 4 | G — Gate |
| 핀 5 | S — Source |
| 핀 6 | S — Source |
| 핀 7 | S — Source |
| 핀 8 | D — Drain |
안전 동작 영역
일반적인 애플리케이션
ISC058N04NM5ATMA1 적합 용도: 7 애플리케이션s: Synchronous Rectification in 12-24V DC-DC Converters, BLDC Motor Drive Half-Bridge, Battery Management System (BMS) Protection, USB-PD and High-Current Load Switch, Solar Micro-Inverter and OR-ing Diode Replacement, Automotive 12V Load Switching, Hot-Swap and In-Rush Current Limiter.
Synchronous Rectification in 12-24V DC-DC Converters
The ISC058N04NM5ATMA1 is ideal for the low-side synchronous-rectifier position in buck converters running from 12V or 24V rails. Its 5.8 mOhm Rds(on) at VGS = 10V keeps conduction loss below ~1% at 20A load, and 40V VDS provides >2x margin over a 24V bus including transient ringing. Compared to a Schottky diode replacement, the synchronous MOSFET reduces rectifier loss by 50-70% and improves thermal headroom in dense SMPS designs.
추천
BLDC Motor Drive Half-Bridge
In brushless DC motor half-bridges for 24V tools, e-bikes, and small drones, the ISC058N04NM5ATMA1 serves as either the high-side or low-side switch. Its 63A continuous drain current supports motor peak currents up to 80A pulsed, and the SuperSO8 5x6 footprint keeps the per-switch PCB area under 30 mm^2. Designers should pair it with a 10V gate driver such as the 6EDL04N02PR and add 100k gate-source resistors to suppress dv/dt-induced turn-on.
추천
Battery Management System (BMS) Protection
The ISC058N04NM5ATMA1 works as the high-side disconnect switch in 4S-6S Li-ion battery packs where the bus voltage stays under 24V. With 5.8 mOhm on-resistance, a 20A discharge path dissipates only 2.3W, manageable on the SuperSO8 pad with 1 oz copper. The OptiMOS 5 process gives fast body-diode reverse recovery, simplifying synchronous-rectifier dead-time design in bi-directional BMS topologies.
추천
USB-PD and High-Current Load Switch
For USB Power-Delivery sink paths and 5V/12V/20V load switches, the ISC058N04NM5ATMA1 provides a low-loss disconnect element. At VGS = 10V, the 5.8 mOhm resistance drops only 58 mV at 10A, well within USB-PD cable regulation. The part's 40V rating covers the full 20V PD profile plus transient overshoot. Use a 10k pull-down on the gate to guarantee a defined off-state when the controller is unpowered.
추천
Solar Micro-Inverter and OR-ing Diode Replacement
In low-voltage (<30V) solar micro-inverter or-ing stages, the ISC058N04NM5ATMA1 replaces Schottky OR-ing diodes with active MOSFET switches, cutting conduction loss by up to 80%. The 63A continuous rating supports parallel-string currents, and the SuperSO8 footprint simplifies thermal coupling to the aluminum substrate. Reverse-current blocking is implemented by sensing VDS and turning the MOSFET off when reverse voltage is detected.
추천
Automotive 12V Load Switching
The ISC058N04NM5ATMA1 (automotive-suffix A in the part number) is suitable for 12V automotive load-switching applications such as LED drivers, body-control modules, and accessory-power distribution. Its 40V VDS absorbs load-dump transients up to 35V, and the SuperSO8 5x6 package meets automotive PCB-area constraints. When paired with an ISO 7637-2 compliant TVS, the design satisfies most OEM EMC requirements for body electronics.
추천
Hot-Swap and In-Rush Current Limiter
In 12V/24V hot-swap controllers, the ISC058N04NM5ATMA1 acts as the series pass element that limits in-rush current when a board is inserted into a live backplane. Its 5.8 mOhm Rds(on) and 63A rating handle continuous load, while the SOA curve at 40V / 30A allows ~10 ms single-pulse operation - sufficient for typical hot-swap ramp profiles. Designers add an RC gate network to program dV/dt and an SOA-aware controller IC for protection.
추천
추천 제품 요약
엔지니어링 참조 데이터: ISC058N04NM5ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | ISC015N04NM5ATMA1 | BSC059N04LSGATMA1 | BSZ024N04LS6ATMA1 | BSC040N08NS5ATMA1 | BSC0902NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same |
| VDS max | 40 V | 40 V | 40 V | 40 V | 80 V | 30 V |
| Rds(on) max @ 10V | 5.8 mOhm | 1.5 mOhm | 5.9 mOhm | 2.4 mOhm | 4.0 mOhm | 9.0 mOhm |
| Gate Threshold VGS(th) typ | 3.4 V (normal level) | 3.4 V (normal level) | 1.7 V (logic level) | 1.7 V (logic level) | 3.4 V (normal level) | 1.7 V (logic level) |
| Technology Family | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS | OptiMOS 5 | OptiMOS 5 |
주요 차별점
- Higher current rating than BSC059N04LSG at similar Rds(on) (vs BSC059N04LSGATMA1)
- Lower Rds(on) per unit cost vs older OptiMOS 3 generation (vs BSC0902NSATMA1)
- Higher VDS rating than 30V parts in same footprint (vs BSC0902NSATMA1)
설계 노트
Estimated: At 30 A continuous current with Rds(on) = 5.8 mOhm, conduction loss is I^2 x R = 30^2 x 0.0058 = 5.2 W. The PG-TDSON-8 FL package has a typical junction-to-ambient thermal resistance of ~50 C/W on a 1 oz 1-inch^2 copper pad, giving a junction-temperature rise of ~260 C above ambient - clearly above the 175 C maximum. For continuous 20 A+ operation, the PCB copper area must be expanded to 2-4 inch^2 on the drain pad, or the design must derate to 15 A continuous at 25 C ambient. Always consult the manufacturer SOA curves in the datasheet.
Place the gate-drive resistor (typically 10-100 ohm) within 5 mm of the gate pin to minimize parasitic-loop inductance. The SuperSO8's duplicated source pins (1-3, 5-7) MUST all be soldered to the PCB source plane to reduce source-inductance-induced voltage spikes that can cause dv/dt turn-on. Connect the thermal pad (pin 8) to a copper pour on the top layer with at least 8 thermal vias to inner-plane copper for 2 oz or heavier boards.
Do not drive the gate with a 3.3V or 5V logic signal - the ISC058N04NM5ATMA1 is normal-level (VGS(th) = 3.4V typical) and requires at least 10V VGS to achieve the rated 5.8 mOhm. Below 6V VGS the device operates in the linear region, dissipating excessive power. For 5V-only designs, choose a logic-level OptiMOS 5 such as ISC011N03L5S. Also avoid exceeding the 40V VDS rating during inductive-switching turn-off - always include a snubber or TVS clamp on the switch node.
Use a star-ground topology tying the source-return of the gate driver directly to the Kelvin source (pin 2 or pin 5, NOT the thermal pad) to avoid ground-bounce-induced gate-oxide stress. The exposed drain pad (pin 8) must carry the full load current - ensure the via array under the pad has at least 12 vias of 0.3 mm diameter to handle 30 A continuous without excessive copper heating.
규정 준수 정보
RoHS compliant per Infineon product page. AEC-Q100 qualification is not separately indicated in the provided data for the standard ISC058N04NM5ATMA1 part. Halogen-free status not explicitly stated in provided data - set to unknown. Conflict-minerals compliance assumed per Infineon's standard CMRT declarations.
