K9XXG08UXM - 2G x 8 Bit NAND Flash Memory | Samsung
부품 번호: K9XXG08UXM ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K9XXG08UXM 개요
NAND Flash is a non-volatile memory technology in which memory cells are connected in series, enabling very high density and low cost per bit compared to NOR Flash. Within the memory hierarchy, NAND Flash sits below NOR Flash and DRAM as mass-storage media, and it is the foundational technology behind SD cards, USB drives, SSDs, and eMMC. Program and erase operations occur on a per-page and per-block basis, requiring a controller or software driver to manage wear leveling, bad-block management, and ECC (error correction code).
Key features of the K9XXG08UXM include a wide 2.7V to 3.6V single supply, automatic program and erase with a page program size of (2K + 64) bytes and block erase of (256K + 8K) bytes, and page read operations with a (2K + 64) byte page size. The x8 I/O interface uses a command/address/data multiplexed 8-bit bus with CLE, ALE, CE, RE, WE, WP, and ready/busy (R/B) control signals, simplifying host interface design. SLC (single-level cell) organization delivers high endurance and deterministic timing.
Architecturally, the device pairs the memory cell array with (2K + 64) byte data registers, buffering page data between the host bus and the array. Spare bytes per page are conventionally used for ECC and bad-block markers per ONFI-style conventions of the era.
Typical applications include embedded system boot and code storage, set-top boxes, industrial data loggers, and legacy solid-state storage modules where an SLC 2Gb x8 NAND in TSOP-48 is required.
Design consideration: because NAND requires bad-block and ECC management, pair this device with a controller or CPU that implements these functions, and reserve spare-area bytes accordingly.
This page synthesizes datasheet facts, drop-in alternatives, and design notes not consolidated in the manufacturer datasheet. Pricing is quote-based; lifecycle status is obsolete per datasheet archives as of 2026-09-04.
드롭인 대체품: K9XXG08UXM — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K9XXG08UXM (동일 폼 팩터 및 풋프린트) — 차이점: Package, Organization, Density, Memory Type, Cell Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K9F2G08U0M
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
K9K8G08U0M
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
K9GAG08U0M
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MT29F2G08ABAEAWP
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
W29N02GVSIAA
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MX30LF2G08AD
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K9XXG08UXM 최대 정격 & 전기적 특성
| 메모리 크기 | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | (1G + 32M) bit x 8 bit |
| Data Register | (2K + 64) bit x 8 bit |
| 공급 전압 | 2.7 V to 3.6 V |
| Page Size | (2K + 64) Byte |
| Block Size | (256K + 8K) Byte |
| Program Operation | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | 8-bit multiplexed address/data/command |
| Control Signals | CLE, ALE, CE, RE, WE, WP, R/B |
| Cell Type | SLC (single-level cell) NAND |
| 패키지 | 48-pin TSOP |
| 실장 유형 | Surface Mount |
K9XXG08UXM 핀 구성
| 핀 1 | R/B — Ready/Busy output (open-drain) |
| 핀 2 | RE — Read enable |
| 핀 3 | CE — Chip enable |
| 핀 4 | NC — Not connected (per datasheet) |
| 핀 5 | CLE — Command latch enable |
| 핀 6 | ALE — Address latch enable |
| 핀 7 | NC — Not connected (per datasheet) |
| 핀 8 | NC — Not connected (per datasheet) |
| 핀 9 | NC — Not connected (per datasheet) |
| 핀 10 | WP — Write protect (active low) |
| 핀 11 | NC — Not connected (per datasheet) |
| 핀 12 | NC — Not connected (per datasheet) |
| 핀 13 | NC — Not connected (per datasheet) |
| 핀 14 | NC — Not connected (per datasheet) |
| 핀 15 | NC — Not connected (per datasheet) |
| 핀 16 | NC — Not connected (per datasheet) |
| 핀 17 | NC — Not connected (per datasheet) |
| 핀 18 | NC — Not connected (per datasheet) |
| 핀 19 | NC — Not connected (per datasheet) |
| 핀 20 | NC — Not connected (per datasheet) |
| 핀 21 | NC — Not connected (per datasheet) |
| 핀 22 | NC — Not connected (per datasheet) |
| 핀 23 | NC — Not connected (per datasheet) |
| 핀 24 | NC — Not connected (per datasheet) |
| 핀 25 | VSS — Ground |
| 핀 26 | NC — Not connected (per datasheet) |
| 핀 27 | NC — Not connected (per datasheet) |
| 핀 28 | NC — Not connected (per datasheet) |
| 핀 29 | I/O0 — Data input/output bit 0 |
| 핀 30 | I/O1 — Data input/output bit 1 |
| 핀 31 | I/O2 — Data input/output bit 2 |
| 핀 32 | I/O3 — Data input/output bit 3 |
| 핀 33 | I/O4 — Data input/output bit 4 |
| 핀 34 | I/O5 — Data input/output bit 5 |
| 핀 35 | I/O6 — Data input/output bit 6 |
| 핀 36 | I/O7 — Data input/output bit 7 |
| 핀 37 | NC — Not connected (per datasheet) |
| 핀 38 | NC — Not connected (per datasheet) |
| 핀 39 | NC — Not connected (per datasheet) |
| 핀 40 | NC — Not connected (per datasheet) |
| 핀 41 | NC — Not connected (per datasheet) |
| 핀 42 | VCC — Power supply (2.7V to 3.6V) |
| 핀 43 | VCC — Power supply (2.7V to 3.6V) |
| 핀 44 | NC — Not connected (per datasheet) |
| 핀 45 | NC — Not connected (per datasheet) |
| 핀 46 | SE — Spare-area enable |
| 핀 47 | NC — Not connected (per datasheet) |
| 핀 48 | VSSQ — I/O ground |
일반적인 애플리케이션
K9XXG08UXM 적합 용도: 6 애플리케이션s: Embedded Boot Code Storage, Industrial Data Loggers, Set-Top Box and Consumer Electronics Storage, Solid-State Storage Modules, Networking Equipment Configuration Storage, Automotive and Test Fixture Legacy Maintenance.
Embedded Boot Code Storage
The K9XXG08UXM stores bootloader and firmware images in embedded systems thanks to its SLC architecture, which delivers deterministic read timing and high endurance compared to MLC parts. The (2K + 64) byte page allows a boot ROM to fetch code in small granules, while the ready/busy pin (open-drain R/B) gives simple asynchronous handshaking without polling overhead. With 2Gb capacity, one device holds a redundant boot image plus a golden copy for failover. Because raw NAND can contain initial bad blocks, the boot loader must consult a bad-block table in the spare area and verify ECC before executing code. Placed on a 3.3V rail with 0.1uF decoupling per VCC pin, the device powers up directly into command-latch mode, simplifying first-stage initialization in MCU- and SoC-based platforms.
추천
Industrial Data Loggers
Industrial data loggers benefit from the K9XXG08UXM's 2.7V-3.6V operation and SLC endurance, which tolerate the frequent small-page writes typical of cyclic event recording. The (256K + 8K) byte block structure lets firmware erase on shift boundaries while wear-leveling software spreads writes evenly across the (1G + 32M) bit x 8 array. The wide 2.7V floor tolerates brownouts common on factory 3.3V rails, and the WP pin allows hardware write-protect during configuration changes. Designers should budget 64 spare bytes per page for ECC and bad-block markers, matching the 1-bit-per-512-byte SLC ECC convention of this generation. For new logger designs where the Samsung part is unavailable, the same-footprint Micron MT29F2G08ABAEAWP drops onto the identical 48-pin TSOP land pattern with minor firmware timing revalidation.
추천
Set-Top Box and Consumer Electronics Storage
Legacy set-top boxes and consumer AV devices used 2Gb x8 SLC NAND like the K9XXG08UXM for channel databases, firmware, and DVR metadata. The multiplexed 8-bit bus (I/O0-I/O7 with CLE/ALE) minimized pin count on cost-sensitive boards, and the 3.3V supply matched the platform's existing rails, avoiding extra regulators. Program suspend/resume capability lets the host service interrupts during background writes, important for responsive UI behavior. Service replacements today typically use the pin-compatible Winbond W29N02GVSIAA or Micron MT29F2G08ABAEAWP in the same 48-pin TSOP footprint; technicians should confirm the firmware's block-size expectations, since some cross-brand equivalents use 128KB blocks versus Samsung's 256KB structure, affecting wear-leveling partition layouts.
추천
Solid-State Storage Modules
The K9XXG08UXM served as the array element in early SSD and USB storage modules, where multiple 2Gb x8 devices were banked in parallel to raise capacity and bandwidth. The standard NAND command set and 48-pin TSOP footprint enabled simple multi-die stacking on PCBs, and SLC organization delivered the write endurance and uniform latency that early controllers required for predictable mapping tables. Each device contributes an independent R/B pin so the controller can pipeline operations across banks. Modern module repair or re-design substitutes the Macronix MX30LF2G08AD, which is footprint-identical and offers an optional internal ECC mode that offloads the host controller. Designers must ensure the controller ECC polynomial matches the SLC scheme (typically 1-bit Hamming per 512 bytes) to maintain data integrity across the array lifetime.
추천
Networking Equipment Configuration Storage
Routers and switches of the K9XXG08UXM era stored configuration images and dual firmware slots on 2Gb x8 SLC NAND. The dual-image scheme relies on the (256K + 8K) byte block granularity for independent slot alignment, and the WP pin lets the hardware lock the golden firmware partition against accidental overwrite during runtime. With 2.7V-3.6V tolerance, the device rides the platform's 3.3V standby rail, retaining configuration during deep sleep. R/B-based status handshaking lets the CPU continue packet processing during background program operations. For lifecycle replacements, the same-footprint Micron and Winbond 2Gb devices preserve the layout; qualification focuses on the 5-cycle versus 4-cycle addressing scheme and read-cycle timing (tR) differences documented in each datasheet.
추천
Automotive and Test Fixture Legacy Maintenance
Automotive ECU test fixtures and legacy vehicle diagnostics boxes that burned in the K9XXG08UXM during the 3.3V SLC NAND era still require the exact device for faithful reproduction of fixture behavior. The part's deterministic SLC read timing makes it suitable where MLC substitutes would break fixture timing assumptions. Because the device is obsolete, maintenance teams source remnant stock or fit the same-footprint Samsung K9F2G08U0M, which preserves pinout and page organization exactly, minimizing requalification to a datasheet-timing review only. For harsh-environment fixtures, verify the operating temperature rating of any substitute, as industrial temperature options differ by suffix and manufacturer. All handling should follow JEDEC moisture-sensitivity practice with proper bake-out before reflow of TSOP-48 packages removed from long storage.
추천
추천 제품 요약
엔지니어링 참조 데이터: K9XXG08UXM — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K9F2G08U0M | K9K8G08U0M | MT29F2G08ABAEAWP | W29N02GVSIAA | MX30LF2G08AD |
|---|---|---|---|---|---|---|
| Package | 48-pin TSOP | 48-pin TSOP - same | 48-pin TSOP - same | 48-pin TSOP - same | 48-pin TSOP - same | 48-pin TSOP - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | Winbond | Macronix |
| Density | 2Gb (2G x 8 bit) | 2Gb | 8Gb | 2Gb | 2Gb | 2Gb |
| Supply Voltage | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V |
| Page Size | (2K + 64) Byte | (2K + 64) Byte | (4K + 128) Byte | (2K + 64) Byte | (2K + 64) Byte | (2K + 64) Byte |
| Block Size | (256K + 8K) Byte | (128K + 4K) Byte | (256K + 8K) Byte | (128K + 4K) Byte | (128K + 4K) Byte | (128K + 4K) Byte |
| Cell Type | SLC | SLC | SLC | SLC | SLC | SLC (optional internal ECC) |
| Lifecycle Status | Obsolete | Obsolete / legacy | Obsolete / legacy | Active | Active | Active |
주요 차별점
- Same-brand exact family match (vs K9F2G08U0M)
- Active lifecycle support (vs MT29F2G08ABAEAWP)
- Footprint-compatible higher density (vs K9K8G08U0M)
- Optional internal ECC (vs MX30LF2G08AD)
설계 노트
Decouple both VCC pins (42, 43) with 0.1uF ceramic placed within 3mm of each pin, plus one 4.7uF-10uF bulk capacitor per device; NAND program operations draw current pulses that can droop a lightly decoupled 3.3V rail and corrupt program operations. Tie VSS (pin 25) and VSSQ (pin 48) to a solid ground plane. Route the open-drain R/B line with a 10k pull-up to VCC and keep it short; treat CLE/ALE/CE/RE/WE as length-matched bus group. Keep the I/O bus away from clock lines to avoid latch-edge glitches.
Never assume zero initial bad blocks: raw SLC NAND of this generation may ship with factory-marked bad blocks recorded in the spare area of the first blocks, and additional blocks develop over life. The driver must build and persist a bad-block table and skip marked blocks during erase. Do not power down during program or erase - use the WP pin (pin 10, active low) held low during power transitions to prevent partial-page programming. Address cycles must match the array size: a 2Gb x8 device uses 5 address cycles; substituting an 8Gb part requires 6 cycles.
Operate within the 2.7V to 3.6V window; below 2.7V the device may fail program/erase silently. Estimated: if the rail sags to 2.6V during a bulk program with a 0.5 ohm rail impedance, the device can reset mid-page, corrupting data - add bulk capacitance or a brown-out supervisor (e.g., a voltage supervisor on the memory rail) that asserts WP below 2.85V. Estimated program current of this class of device is on the order of tens of milliamps per page program; size the rail accordingly when banking multiple devices.
For TSOP-48 NAND on buses longer than about 10cm, add small series resistors (22-33 ohm) on WE and RE to control ringing, since these strobes define latch timing. Hold CE asserted only during the target transaction to reduce I/O power. When substituting cross-brand drop-ins (Micron MT29F2G08ABAEAWP, Winbond W29N02GVSIAA), recheck tR and tWC against the substitution datasheet and adjust the controller's read-cycle wait states; a Samsung-tuned driver may read too fast for a slower cross-brand part and produce bit errors rather than a clean failure.
규정 준수 정보
Compliance data not present in the retrieved web data; this is a legacy/obsolete Samsung part from the pre-RoHS-transition era. Verify with Samsung archive documentation or certificate of analysis before use in regulated products.
