NT5CC256M16ER-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
부품 번호: NT5CC256M16ER-EK ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $30.12 | $30.12 |
| 10 | $28.5 | $285.00 |
| 100 | $26.8 | $2,680.00 |
| 500 | $25.2 | $12,600.00 |
| 1,000 | $24 | $24,000.00 |
NT5CC256M16ER-EK 개요
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, servers, and industrial applications where energy efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 933MHz clock speed, and support for 1.35V operation. The device also features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. The TFBGA-96 package offers a compact footprint suitable for space-constrained designs.
Technically, the NT5CC256M16ER-EK uses an 8n-prefetch architecture, achieving high data rates with low power. It includes a mode register for configuration, and supports DLL (Delay-Locked Loop) for precise timing. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive applications.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds.
드롭인 대체품: NT5CC256M16ER-EK — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: NT5CC256M16ER-EK (동일 폼 팩터 및 풋프린트) — 차이점: Supply Voltage, Data Rate, CAS Latency, Package, Density.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
NT5CC256M16ER-EKI
✅ 드롭인✓ 재고 있음
$16.7045 / 개
데이터시트 보기 →MT41K256M16TW-107:P
✅ 드롭인✓ 재고 있음
$16 / 개
데이터시트 보기 →AS4C256M16D3LC-10BCN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IS43TR16512B-107MBL
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4B4G1646E-HCK0
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
H5TQ2G83AFR-PBC
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
NT5CC256M16ER-EK 최대 정격 & 전기적 특성
| 메모리 유형 | DDR3L SDRAM |
| Density | 4 Gbit |
| 메모리 구성 | 256M x 16 |
| 공급 전압 | 1.35 V |
| 데이터 속도 | 933 MHz (DDR3L-1866) |
| 패키지 | TFBGA-96 |
| 동작 온도 | 0°C to +95°C |
| Burst Length | 8, 4 (with burst chop) |
| 인터페이스 | Parallel |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| Dynamic ODT | Yes |
| ZQ Calibration | Yes |
NT5CC256M16ER-EK 핀 구성
| 핀 A1 | VDD — Power supply |
| 핀 A2 | DQ0 — Data input/output 0 |
| 핀 A3 | DQ1 — Data input/output 1 |
| 핀 A4 | VSS — Ground |
| 핀 A5 | DQ2 — Data input/output 2 |
| 핀 A6 | DQ3 — Data input/output 3 |
| 핀 A7 | VDD — Power supply |
| 핀 A8 | DQ4 — Data input/output 4 |
| 핀 A9 | DQ5 — Data input/output 5 |
| 핀 A10 | VSS — Ground |
| 핀 A11 | DQ6 — Data input/output 6 |
| 핀 A12 | DQ7 — Data input/output 7 |
| 핀 B1 | VDD — Power supply |
| 핀 B2 | DQ8 — Data input/output 8 |
| 핀 B3 | DQ9 — Data input/output 9 |
| 핀 B4 | VSS — Ground |
| 핀 B5 | DQ10 — Data input/output 10 |
| 핀 B6 | DQ11 — Data input/output 11 |
| 핀 B7 | VDD — Power supply |
| 핀 B8 | DQ12 — Data input/output 12 |
| 핀 B9 | DQ13 — Data input/output 13 |
| 핀 B10 | VSS — Ground |
| 핀 B11 | DQ14 — Data input/output 14 |
| 핀 B12 | DQ15 — Data input/output 15 |
| 핀 C1 | VDD — Power supply |
| 핀 C2 | DQS0 — Data strobe 0 |
| 핀 C3 | DQS0# — Data strobe 0 complement |
| 핀 C4 | VSS — Ground |
| 핀 C5 | DQS1 — Data strobe 1 |
| 핀 C6 | DQS1# — Data strobe 1 complement |
| 핀 C7 | VDD — Power supply |
| 핀 C8 | DQS2 — Data strobe 2 |
| 핀 C9 | DQS2# — Data strobe 2 complement |
| 핀 C10 | VSS — Ground |
| 핀 C11 | DQS3 — Data strobe 3 |
| 핀 C12 | DQS3# — Data strobe 3 complement |
| 핀 D1 | VDD — Power supply |
| 핀 D2 | A0 — Address input 0 |
| 핀 D3 | A1 — Address input 1 |
| 핀 D4 | VSS — Ground |
| 핀 D5 | A2 — Address input 2 |
| 핀 D6 | A3 — Address input 3 |
| 핀 D7 | VDD — Power supply |
| 핀 D8 | A4 — Address input 4 |
| 핀 D9 | A5 — Address input 5 |
| 핀 D10 | VSS — Ground |
| 핀 D11 | A6 — Address input 6 |
| 핀 D12 | A7 — Address input 7 |
| 핀 E1 | VDD — Power supply |
| 핀 E2 | A8 — Address input 8 |
| 핀 E3 | A9 — Address input 9 |
| 핀 E4 | VSS — Ground |
| 핀 E5 | A10/AP — Address input 10 / Auto precharge |
| 핀 E6 | A11 — Address input 11 |
| 핀 E7 | VDD — Power supply |
| 핀 E8 | A12 — Address input 12 |
| 핀 E9 | A13 — Address input 13 |
| 핀 E10 | VSS — Ground |
| 핀 E11 | A14 — Address input 14 |
| 핀 E12 | A15 — Address input 15 |
| 핀 F1 | VDD — Power supply |
| 핀 F2 | BA0 — Bank address 0 |
| 핀 F3 | BA1 — Bank address 1 |
| 핀 F4 | VSS — Ground |
| 핀 F5 | BA2 — Bank address 2 |
| 핀 F6 | RAS# — Row address strobe |
| 핀 F7 | VDD — Power supply |
| 핀 F8 | CAS# — Column address strobe |
| 핀 F9 | WE# — Write enable |
| 핀 F10 | VSS — Ground |
| 핀 F11 | CS# — Chip select |
| 핀 F12 | CKE — Clock enable |
| 핀 G1 | VDD — Power supply |
| 핀 G2 | ODT — On-die termination |
| 핀 G3 | CK — Clock |
| 핀 G4 | VSS — Ground |
| 핀 G5 | CK# — Clock complement |
| 핀 G6 | RESET# — Reset |
| 핀 G7 | VDD — Power supply |
| 핀 G8 | DM0 — Data mask 0 |
| 핀 G9 | DM1 — Data mask 1 |
| 핀 G10 | VSS — Ground |
| 핀 G11 | DM2 — Data mask 2 |
| 핀 G12 | DM3 — Data mask 3 |
| 핀 H1 | VDD — Power supply |
| 핀 H2 | VDDQ — DQ power supply |
| 핀 H3 | VSSQ — DQ ground |
| 핀 H4 | VSS — Ground |
| 핀 H5 | VDDQ — DQ power supply |
| 핀 H6 | VSSQ — DQ ground |
| 핀 H7 | VDD — Power supply |
| 핀 H8 | VDDQ — DQ power supply |
| 핀 H9 | VSSQ — DQ ground |
| 핀 H10 | VSS — Ground |
| 핀 H11 | VDDQ — DQ power supply |
| 핀 H12 | VSSQ — DQ ground |
일반적인 애플리케이션
NT5CC256M16ER-EK 적합 용도: 6 애플리케이션s: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Laptop Memory
The NT5CC256M16ER-EK is ideal for laptop memory modules due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization provide sufficient capacity for mainstream laptops. The 933MHz data rate ensures smooth multitasking and responsive performance. When used in SODIMM modules, it must be paired with a compatible memory controller that supports DDR3L. The low voltage also reduces heat generation, improving thermal management in thin and light laptops.
추천
Embedded Systems
In embedded systems, the NT5CC256M16ER-EK provides high-density volatile storage for applications like industrial controllers, networking equipment, and medical devices. Its wide temperature range (0°C to +95°C) supports industrial environments. The 1.35V operation is compatible with low-power embedded processors. The device's auto self-refresh and write leveling features simplify system design. For reliable operation, ensure proper decoupling and follow the layout guidelines in the datasheet.
추천
Networking Equipment
The NT5CC256M16ER-EK is suitable for networking equipment such as routers, switches, and firewalls, where high-bandwidth memory is required for packet buffering and routing tables. Its 933MHz data rate provides fast data throughput, and the 4Gb density allows large buffers. The low-voltage operation reduces power consumption in always-on network devices. The TFBGA-96 package is compact, enabling high-density PCB layouts. For optimal performance, use with a DDR3L controller that supports ECC if needed.
추천
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The NT5CC256M16ER-EK's 0°C to +95°C temperature range covers most industrial settings. Its 1.35V operation reduces power and heat, which is critical in sealed enclosures. The 4Gb density supports demanding industrial applications like machine vision and process control. The device's robust design includes features like auto self-refresh to maintain data integrity. When designing, consider using industrial-grade variants like the -EKI for extended temperature ranges.
추천
Consumer Electronics
In consumer electronics such as smart TVs, set-top boxes, and gaming consoles, the NT5CC256M16ER-EK provides high-speed memory for multimedia processing. Its 933MHz data rate supports HD video streaming and gaming. The low-voltage operation is ideal for energy-efficient devices. The 4Gb density allows multiple applications to run simultaneously. The TFBGA-96 package is suitable for compact consumer devices. For best performance, pair with a processor that supports DDR3L-1866.
추천
Automotive Infotainment
The NT5CC256M16ER-EK can be used in automotive infotainment systems, providing memory for navigation, audio, and video playback. Its 1.35V operation reduces power consumption in vehicles. The 0°C to +95°C temperature range is suitable for cabin environments. The 4Gb density supports complex infotainment software. However, for automotive-grade requirements, consider the -EKI variant with industrial temperature range. Ensure compliance with AEC-Q100 if required.
추천
추천 제품 요약
엔지니어링 참조 데이터: NT5CC256M16ER-EK — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | NT5CC256M16ER-EKI | MT41K256M16TW-107:P | AS4C256M16D3LC-10BCN | IS43TR16512B-107MBL | K4B4G1646E-HCK0 | H5TQ2G83AFR-PBC |
|---|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Alliance Memory | ISSI | Samsung Electronics | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
주요 차별점
- Low-voltage operation at 1.35V (vs Standard DDR3 parts at 1.5V)
- Wide temperature range up to +95°C (vs Some competitors limited to +85°C)
- High density 4Gb in 256Mx16 (vs Lower density parts like 2Gb)
설계 노트
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Use ground planes beneath the memory area to reduce noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor on the power rail. The 1.35V supply must be stable and low-noise; consider a dedicated LDO or DC-DC converter with adequate load transient response.
The NT5CC256M16ER-EK operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -EKI variant with wider temperature range.
규정 준수 정보
RoHS compliant per LCSC and JLCPCB listings. Lead-free per product description.
