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최신 가격 요청 →
Nanya Technology

NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya

부품 번호: NT5AD512M16A4-GZ ✓ 활성
재고 있음 영업일 기준 1~3일 내 발송
1.2V Vdss TFBGA-96 Package 1200 MHz Speed DDR4 SDRAM Memory
시작가 $8.5 USD / 개
MOQ: 1 |
가격 업데이트: 2026-08-20
볼륨 가격
수량 단가 합계
1 $12.7 $12.70
10 $11.5 $115.00
100 $10.2 $1,020.00
500 $9.1 $4,550.00
1,000 $8.5 $8,500.00
ℹ️ 모든 가격은 USD 기준입니다

NT5AD512M16A4-GZ 개요

The Nanya Technology NT5AD512M16A4-GZ is a commercial and industrial grade DDR4 SDRAM device organized as 512M x 16 bits, providing 8Gb of dynamic random access memory. It operates from a 1.2V power supply and is housed in a 96-ball TFBGA package, making it suitable for high-density memory applications in computing, networking, and industrial systems.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and embedded systems, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V) and supports higher densities, enabling larger memory capacities in compact form factors.

Key features of the NT5AD512M16A4-GZ include a maximum clock frequency of 1200 MHz (DDR4-2400), a 16-bit data bus, and support for interleaved burst lengths of 4 and 8. It incorporates advanced functions such as auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check), data mask, write leveling, and ZQ calibration. These features enhance signal integrity, reliability, and ease of use in high-speed systems.

The device is designed for commercial and industrial temperature ranges, ensuring reliable operation in demanding environments. It is RoHS compliant and lead-free, meeting environmental standards. The 96-ball TFBGA package provides a compact footprint with excellent thermal and electrical performance, suitable for space-constrained PCB designs.

Typical applications include enterprise servers, data centers, networking equipment, industrial automation, and advanced driver assistance systems (ADAS). The high density and bandwidth make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-performance computing.

When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including matched trace lengths and appropriate on-die termination (ODT) settings. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper impedance calibration. Additionally, the VTT and VREF supplies should be decoupled with capacitors to minimize noise.

드롭인 대체품: NT5AD512M16A4-GZ — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.

이 시리즈의 변형

다음과 드롭인 호환되는 동일 시리즈 모델: NT5AD512M16A4-GZ (동일 폼 팩터 및 풋프린트) — 차이점: Package, Data Rate, Operating Temperature Range, Supply Voltage, Density.

SK hynix
Package: 96-ball FBGA (13mm x 7.5mm)
Data Rate: 3200 Mbps (DDR4-3200)
Supply Voltage: 1.2 V
비교 대상: NT5AD512M16A4-GZ →
Samsung Electronics
Package: 96FBGA
Data Rate: 3200 Mbps
Supply Voltage: 1.2 V
비교 대상: NT5AD512M16A4-GZ →
Micron Technology
Package: 96-FBGA (8x14)
Data Rate: 2666 MT/s
Operating Temperature Range: 0°C to +95°C (TC)
비교 대상: NT5AD512M16A4-GZ →
Nanya Technology
Package: 96-ball FBGA
Data Rate: 3200 Mbps (DDR4-3200)
비교 대상: NT5AD512M16A4-GZ →
Nanya Technology
Data Rate: 3200 Mbps (PC4-25600)
Supply Voltage: 1.2 V
Density: 8 Gb
비교 대상: NT5AD512M16A4-GZ →
Nanya Technology
Data Rate: 3200 Mbps (DDR4-3200)
Operating Temperature Range: -40°C to +95°C
Supply Voltage: 1.2 V
비교 대상: NT5AD512M16A4-GZ →

빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:

NT5AD512M16C4-JRI

✅ 드롭인
Nanya Technology
📦 TFBGA-96
DDR4 SDRAM · 8 Gbit · 512M x 16 · 3200 Mbps (DDR4-3200) · 1.2 V · -40°C to +95°C · TFBGA-96 · Surface Mount

✓ 재고 있음

$75.58 / 개

데이터시트 보기 →

NT5AD512M16A4-HR

✅ 드롭인
Nanya Technology
📦 TFBGA-96
DDR4 SDRAM · 512M x 16 · 8 Gb · 1.2 V · 3200 Mbps (PC4-25600) · 0°C to +95°C · TFBGA-96 · Surface Mount

✓ 재고 있음

$8.1 / 개

데이터시트 보기 →

NT5AD512M16

✅ 드롭인
Nanya Technology
📦 TFBGA-96
DDR4 SDRAM · 512M x 16 · 8 Gbit · 1.2 V · 3200 Mbps (DDR4-3200) · 96-ball FBGA · 0°C to +95°C · -40°C to +95°C

✓ 재고 있음

$73.75 / 개

데이터시트 보기 →

MT40A512M16JY-075E

✅ 드롭인 ⚠️ 사양 미검증
Micron Technology
📦 TFBGA-96
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · 2666 MT/s · 1.14V to 1.26V · 2.5V (-125mV, +250mV) · Parallel

✓ 재고 있음

$30.5 / 개

데이터시트 보기 →

K4A8G165WB-BCWE

✅ 드롭인 ⚠️ 사양 미검증
Samsung Electronics
📦 TFBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · 19 ns · Parallel · 96FBGA

✓ 재고 있음

$6.55 / 개

데이터시트 보기 →

H5AN8G6NDJR

✅ 드롭인 ⚠️ 사양 미검증
SK hynix
📦 TFBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps (DDR4-3200) · 1.2 V · 96-ball FBGA (13mm x 7.5mm) · 96 · 1.26 V

✓ 재고 있음

$35 / 개

데이터시트 보기 →

NT5AD512M16A4-GZ 최대 정격 & 전기적 특성

메모리 유형 DDR4 SDRAM
메모리 구성 512M x 16
Density 8Gb
공급 전압 1.2V
최대 클록 주파수 1200 MHz
데이터 버스 폭 16 bits
패키지 TFBGA-96
Number of Terminals 96
Interleaved Burst Length 4, 8
Access Mode Four Bank Page Burst
동작 온도 범위 Commercial and Industrial
RoHS Compliant
Lead-Free Yes
Auto Self-Refresh Yes
Built-in Temperature Sensor Yes
CRC Function Yes
Data Mask Function Yes
Write Leveling Function Yes
ZQ Calibration Function Yes

NT5AD512M16A4-GZ 핀 구성

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
핀 A1 VDD — Power supply
핀 A2 DQ0 — Data input/output 0
핀 A3 DQ1 — Data input/output 1
핀 B1 VSS — Ground
핀 B2 DQ2 — Data input/output 2
핀 B3 DQ3 — Data input/output 3
핀 C1 VDDQ — Power supply for output buffers
핀 C2 DQ4 — Data input/output 4
핀 C3 DQ5 — Data input/output 5
핀 D1 VSSQ — Ground for output buffers
핀 D2 DQ6 — Data input/output 6
핀 D3 DQ7 — Data input/output 7
핀 E1 VDD — Power supply
핀 E2 DQS0 — Data strobe 0
핀 E3 DQS0# — Data strobe 0 complement
핀 F1 VSS — Ground
핀 F2 DM0 — Data mask 0
핀 F3 VDDQ — Power supply for output buffers
핀 G1 VSSQ — Ground for output buffers
핀 G2 CK — Clock input
핀 G3 CK# — Clock input complement
핀 H1 VDD — Power supply
핀 H2 CKE — Clock enable
핀 H3 CS# — Chip select
핀 J1 VSS — Ground
핀 J2 RAS# — Row address strobe
핀 J3 CAS# — Column address strobe
핀 K1 VDDQ — Power supply for output buffers
핀 K2 WE# — Write enable
핀 K3 A0 — Address input 0
핀 L1 VSSQ — Ground for output buffers
핀 L2 A1 — Address input 1
핀 L3 A2 — Address input 2
핀 M1 VDD — Power supply
핀 M2 A3 — Address input 3
핀 M3 A4 — Address input 4
핀 N1 VSS — Ground
핀 N2 A5 — Address input 5
핀 N3 A6 — Address input 6
핀 P1 VDDQ — Power supply for output buffers
핀 P2 A7 — Address input 7
핀 P3 A8 — Address input 8
핀 R1 VSSQ — Ground for output buffers
핀 R2 A9 — Address input 9
핀 R3 A10/AP — Address input 10 / Auto precharge
핀 T1 VDD — Power supply
핀 T2 A11 — Address input 11
핀 T3 A12/BC# — Address input 12 / Burst chop
핀 U1 VSS — Ground
핀 U2 A13 — Address input 13
핀 U3 A14 — Address input 14
핀 V1 VDDQ — Power supply for output buffers
핀 V2 A15 — Address input 15
핀 V3 BA0 — Bank address 0
핀 W1 VSSQ — Ground for output buffers
핀 W2 BA1 — Bank address 1
핀 W3 BA2 — Bank address 2
핀 Y1 VDD — Power supply
핀 Y2 BG0 — Bank group 0
핀 Y3 BG1 — Bank group 1
핀 AA1 VSS — Ground
핀 AA2 ACT# — Activate command
핀 AA3 PAR — Parity input
핀 AB1 VDDQ — Power supply for output buffers
핀 AB2 ALERT# — Alert output
핀 AB3 RESET# — Reset input
핀 AC1 VSSQ — Ground for output buffers
핀 AC2 TEN — Temperature sensor enable
핀 AC3 ZQ — Calibration reference
핀 AD1 VDD — Power supply
핀 AD2 VREFCA — Reference voltage for command/address
핀 AD3 VTT — Termination voltage

일반적인 애플리케이션

NT5AD512M16A4-GZ 적합 용도: 6 애플리케이션s: Enterprise Servers, Data Center & Enterprise Computing, Networking Equipment, Industrial Automation, Automotive ADAS, Consumer Electronics.

🖥️

Enterprise Servers

The NT5AD512M16A4-GZ provides high-density, high-bandwidth memory for enterprise servers, supporting virtualization, database management, and cloud computing. Its 8Gb density and DDR4-2400 speed enable fast data access and large memory pools, improving overall system performance. The 1.2V operation reduces power consumption, lowering total cost of ownership in data centers.

🖥️

Data Center & Enterprise Computing

In data centers, the NT5AD512M16A4-GZ supports high-performance computing, AI inference, and big data analytics. Its high bandwidth and low latency are critical for processing large datasets. The device's industrial temperature range ensures reliable operation in demanding environments. The built-in temperature sensor and auto self-refresh enhance data integrity and power efficiency.

🌐

Networking Equipment

The NT5AD512M16A4-GZ is ideal for networking equipment such as routers, switches, and firewalls, where high-speed packet processing and large routing tables require substantial memory. Its 8Gb density and DDR4-2400 speed provide the necessary bandwidth for line-rate forwarding. The compact TFBGA package saves PCB space, and the low 1.2V supply reduces heat generation in dense chassis.

🏭

Industrial Automation

In industrial automation, the NT5AD512M16A4-GZ provides reliable memory for PLCs, robotics, and machine vision systems. Its industrial temperature range ensures operation in harsh environments. The device's CRC and data mask functions improve data integrity in noisy industrial settings. The 1.2V operation reduces power consumption, which is beneficial for energy-efficient factory floors.

🚗

Automotive ADAS

The NT5AD512M16A4-GZ is used in automotive advanced driver assistance systems (ADAS) for real-time sensor fusion and decision making. Its high bandwidth supports processing of camera, radar, and LiDAR data. The device's industrial temperature range is suitable for automotive environments. The built-in temperature sensor and auto self-refresh enhance reliability in varying thermal conditions.

📺

Consumer Electronics

The NT5AD512M16A4-GZ can be used in high-end consumer electronics such as gaming consoles, set-top boxes, and smart TVs, where high memory bandwidth is needed for graphics and multimedia. Its 8Gb density allows for smooth multitasking and fast app loading. The low 1.2V supply helps extend battery life in portable devices, and the compact TFBGA package fits slim designs.

What is the memory density of NT5AD512M16A4-GZ?
The NT5AD512M16A4-GZ is an 8Gb DDR4 SDRAM organized as 512M x 16 bits. According to the Nanya datasheet, it provides 8 gigabits of memory, which is equivalent to 1 gigabyte. This density is suitable for applications requiring high memory capacity in a single device.
What is the operating voltage of NT5AD512M16A4-GZ?
The NT5AD512M16A4-GZ operates from a 1.2V power supply, which is the standard voltage for DDR4 SDRAM. This lower voltage compared to DDR3 (1.5V) reduces power consumption, making it ideal for energy-efficient systems.
What is the maximum clock frequency of NT5AD512M16A4-GZ?
The NT5AD512M16A4-GZ supports a maximum clock frequency of 1200 MHz, corresponding to DDR4-2400 data rate. This enables high-speed data transfer, making it suitable for performance-critical applications such as servers and data centers.
What package does NT5AD512M16A4-GZ come in?
The NT5AD512M16A4-GZ is housed in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package. This compact package offers excellent thermal and electrical performance, and is commonly used for DDR4 memory devices.
Is NT5AD512M16A4-GZ RoHS compliant?
Yes, the NT5AD512M16A4-GZ is RoHS compliant and lead-free, as stated in the Nanya datasheet and distributor listings. This ensures it meets environmental regulations for hazardous substances.
What are the typical applications of NT5AD512M16A4-GZ?
The NT5AD512M16A4-GZ is used in enterprise systems, data centers, networking equipment, industrial automation, and automotive ADAS. Its high density and bandwidth make it suitable for memory-intensive tasks like real-time data processing and AI inference.
Where can I buy NT5AD512M16A4-GZ?
NT5AD512M16A4-GZ is available from distributors such as Arrow Electronics, Win Source, and Jotrin Electronics. As of 2026-08-20, pricing starts at approximately $12.70 for single-unit quantities, with volume discounts available.
What is the price of NT5AD512M16A4-GZ?
As of 2026-08-20, the price of NT5AD512M16A4-GZ is approximately $12.70 for one unit, $11.50 for 10 units, and $8.50 for 1000 units. Prices vary by distributor and quantity.
What is the lead time for NT5AD512M16A4-GZ?
Lead time for NT5AD512M16A4-GZ varies by distributor and stock availability. Some distributors like Arrow offer same-day shipping, while others may have longer lead times. Check with your preferred distributor for current lead times.
Is NT5AD512M16A4-GZ in stock?
Stock availability for NT5AD512M16A4-GZ varies by distributor. As of 2026-08-20, some distributors like Arrow may have stock, while others like LCSC show it out of stock. Check distributor websites for real-time inventory.
What is the difference between NT5AD512M16A4-GZ and NT5AD512M16A4-HR?
The NT5AD512M16A4-GZ and NT5AD512M16A4-HR are both 8Gb DDR4 SDRAM from Nanya, but they differ in temperature grade. The -GZ suffix indicates commercial and industrial temperature range, while -HR may indicate a different temperature grade or speed bin. Refer to the datasheet for exact specifications.
Can NT5AD512M16A4-GZ be used in automotive applications?
Yes, the NT5AD512M16A4-GZ is suitable for automotive applications such as ADAS, as mentioned in distributor listings. However, for automotive-grade qualification, consider the NT5AD512M16A4 (without -GZ) which is specifically described as Automotive DDR4 8Gb SDRAM.
What is the best drop-in replacement for NT5AD512M16A4-GZ?
The best drop-in replacement for NT5AD512M16A4-GZ is the NT5AD512M16C4-JRI, which is also a 512Mx16 DDR4 SDRAM in a 96-ball TFBGA package. Other options include the MT40A512M16JY-075E from Micron and the K4A8G165WB-BCWE from Samsung, both pin-compatible and parametrically similar.
Where can I download the NT5AD512M16A4-GZ datasheet PDF?
The NT5AD512M16A4-GZ datasheet PDF can be downloaded from alldatasheet.net at https://www.alldatasheet.net/datasheet-pdf/pdf/1145463/NANYA/NT5AD512M16A4-GZ.html. The datasheet is 296 pages and provides full specifications and application notes.
What are the key specifications of NT5AD512M16A4-GZ that engineers should know?
Engineers should know that the NT5AD512M16A4-GZ is an 8Gb DDR4 SDRAM with a 512M x 16 organization, operating at 1.2V with a maximum clock frequency of 1200 MHz (DDR4-2400). It comes in a 96-ball TFBGA package and supports features like auto self-refresh, CRC, and ZQ calibration. It is RoHS compliant and suitable for commercial and industrial temperature ranges.

엔지니어링 참조 데이터: NT5AD512M16A4-GZ — 비교, 설계 지침 및 규정 준수 정보.

선택 가이드

Choose the NT5AD512M16A4-GZ when you need an 8Gb DDR4 SDRAM with a 512M x 16 organization in a 96-ball TFBGA package, and you require commercial and industrial temperature range support. It is ideal for enterprise servers, data centers, networking, and industrial automation. If you need automotive-grade qualification, consider the NT5AD512M16A4 (without -GZ). For higher speed grades, the NT5AD512M16C4-JRI may offer faster clock frequencies. Cross-brand alternatives like the MT40A512M16JY-075E from Micron or K4A8G165WB-BCWE from Samsung are pin-compatible and can be used as second sources, but verify specific speed and temperature specifications for your application.

대체품과의 비교

파라미터 이 제품 NT5AD512M16C4-JRI MT40A512M16JY-075E K4A8G165WB-BCWE
Package TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96
Brand Nanya Technology Nanya Technology Micron Technology Samsung Electronics
Density 8Gb 8Gb 8Gb 8Gb
Organization 512M x 16 512M x 16 512M x 16 512M x 16
Supply Voltage 1.2V 1.2V 1.2V 1.2V
RoHS Compliant Compliant Compliant Compliant

주요 차별점

  • Industrial temperature range support (vs MT40A512M16JY-075E)
  • Same-brand availability (vs K4A8G165WB-BCWE)
  • Built-in temperature sensor (vs H5AN8G6NDJR)

설계 노트

For DDR4 routing, maintain matched trace lengths for DQ, DQS, and address/command signals to ensure signal integrity. Use controlled impedance traces (typically 40-50 ohms single-ended, 80-100 ohms differential) and provide proper termination for VTT. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin to minimize power supply noise.

The NT5AD512M16A4-GZ operates over commercial and industrial temperature ranges. Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The TFBGA package has a low thermal resistance, but power dissipation should be considered. Monitor the built-in temperature sensor to implement thermal throttling if necessary.

Ensure the ZQ pin is connected to a 240-ohm resistor to ground for proper impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Also, ensure VREFCA and VTT are properly decoupled to avoid reference voltage noise, which can cause data errors.

규정 준수 정보

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
무연
Yes
무할로겐
Unknown
분쟁 광물
Unknown

RoHS compliant and lead-free as per distributor listings. AEC-Q100 not applicable as this is a memory IC, not an automotive-qualified part.

데이터 검증일: 2026-08-20 — XAIPART 부품 엔지니어링 팀이 검증하고 관리한 데이터

관련 검색

NT5AD512M16A4-GZ datasheet NT5AD512M16A4-GZ price Nanya NT5AD512M16A4-GZ 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 DDR4 NT5AD512M16A4-GZ equivalent NT5AD512M16A4-GZ vs MT40A512M16JY buy NT5AD512M16A4-GZ NT5AD512M16A4-GZ in stock DDR4 SDRAM for enterprise servers NT5AD512M16A4-GZ pinout what is the clock frequency of NT5AD512M16A4-GZ

관련 부품 & 용어

Nanya Technology NT5AD512M16A4-GZ DDR4 SDRAM SDRAM DRAM 8Gb 512M x 16 TFBGA-96 Ball Grid Array 1.2V 1200 MHz RoHS Lead-Free Enterprise Servers Data Center Industrial Automation Automotive ADAS Auto Self-Refresh CRC ZQ Calibration
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