NT5CC256M16ER-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
Référence : NT5CC256M16ER-EK ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $30.12 | $30,12 |
| 10 | $28.5 | $285,00 |
| 100 | $26.8 | $2 680,00 |
| 500 | $25.2 | $12 600,00 |
| 1 000 | $24 | $24 000,00 |
NT5CC256M16ER-EK Présentation
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, servers, and industrial applications where energy efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 933MHz clock speed, and support for 1.35V operation. The device also features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. The TFBGA-96 package offers a compact footprint suitable for space-constrained designs.
Technically, the NT5CC256M16ER-EK uses an 8n-prefetch architecture, achieving high data rates with low power. It includes a mode register for configuration, and supports DLL (Delay-Locked Loop) for precise timing. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive applications.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds.
Alternatives de remplacement direct pour NT5CC256M16ER-EK — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CC256M16ER-EK (même facteur de forme et même empreinte) — différant par Supply Voltage, Data Rate, CAS Latency, Package, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CC256M16ER-EKI
✅ Remplacement direct✓ En stock
$16.7045 / unité
Voir la fiche technique →MT41K256M16TW-107:P
✅ Remplacement direct✓ En stock
$16 / unité
Voir la fiche technique →AS4C256M16D3LC-10BCN
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IS43TR16512B-107MBL
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4B4G1646E-HCK0
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
H5TQ2G83AFR-PBC
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
NT5CC256M16ER-EK Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gbit |
| Organisation de la mémoire | 256M x 16 |
| Tension d'alimentation | 1.35 V |
| Débit de données | 933 MHz (DDR3L-1866) |
| Boîtier | TFBGA-96 |
| Température de fonctionnement | 0°C to +95°C |
| Burst Length | 8, 4 (with burst chop) |
| Interface | Parallel |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| Dynamic ODT | Yes |
| ZQ Calibration | Yes |
Configuration des broches de NT5CC256M16ER-EK
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VDD — Power supply |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VSS — Ground |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VDD — Power supply |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VSS — Ground |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDD — Power supply |
| Broche C2 | DQS0 — Data strobe 0 |
| Broche C3 | DQS0# — Data strobe 0 complement |
| Broche C4 | VSS — Ground |
| Broche C5 | DQS1 — Data strobe 1 |
| Broche C6 | DQS1# — Data strobe 1 complement |
| Broche C7 | VDD — Power supply |
| Broche C8 | DQS2 — Data strobe 2 |
| Broche C9 | DQS2# — Data strobe 2 complement |
| Broche C10 | VSS — Ground |
| Broche C11 | DQS3 — Data strobe 3 |
| Broche C12 | DQS3# — Data strobe 3 complement |
| Broche D1 | VDD — Power supply |
| Broche D2 | A0 — Address input 0 |
| Broche D3 | A1 — Address input 1 |
| Broche D4 | VSS — Ground |
| Broche D5 | A2 — Address input 2 |
| Broche D6 | A3 — Address input 3 |
| Broche D7 | VDD — Power supply |
| Broche D8 | A4 — Address input 4 |
| Broche D9 | A5 — Address input 5 |
| Broche D10 | VSS — Ground |
| Broche D11 | A6 — Address input 6 |
| Broche D12 | A7 — Address input 7 |
| Broche E1 | VDD — Power supply |
| Broche E2 | A8 — Address input 8 |
| Broche E3 | A9 — Address input 9 |
| Broche E4 | VSS — Ground |
| Broche E5 | A10/AP — Address input 10 / Auto precharge |
| Broche E6 | A11 — Address input 11 |
| Broche E7 | VDD — Power supply |
| Broche E8 | A12 — Address input 12 |
| Broche E9 | A13 — Address input 13 |
| Broche E10 | VSS — Ground |
| Broche E11 | A14 — Address input 14 |
| Broche E12 | A15 — Address input 15 |
| Broche F1 | VDD — Power supply |
| Broche F2 | BA0 — Bank address 0 |
| Broche F3 | BA1 — Bank address 1 |
| Broche F4 | VSS — Ground |
| Broche F5 | BA2 — Bank address 2 |
| Broche F6 | RAS# — Row address strobe |
| Broche F7 | VDD — Power supply |
| Broche F8 | CAS# — Column address strobe |
| Broche F9 | WE# — Write enable |
| Broche F10 | VSS — Ground |
| Broche F11 | CS# — Chip select |
| Broche F12 | CKE — Clock enable |
| Broche G1 | VDD — Power supply |
| Broche G2 | ODT — On-die termination |
| Broche G3 | CK — Clock |
| Broche G4 | VSS — Ground |
| Broche G5 | CK# — Clock complement |
| Broche G6 | RESET# — Reset |
| Broche G7 | VDD — Power supply |
| Broche G8 | DM0 — Data mask 0 |
| Broche G9 | DM1 — Data mask 1 |
| Broche G10 | VSS — Ground |
| Broche G11 | DM2 — Data mask 2 |
| Broche G12 | DM3 — Data mask 3 |
| Broche H1 | VDD — Power supply |
| Broche H2 | VDDQ — DQ power supply |
| Broche H3 | VSSQ — DQ ground |
| Broche H4 | VSS — Ground |
| Broche H5 | VDDQ — DQ power supply |
| Broche H6 | VSSQ — DQ ground |
| Broche H7 | VDD — Power supply |
| Broche H8 | VDDQ — DQ power supply |
| Broche H9 | VSSQ — DQ ground |
| Broche H10 | VSS — Ground |
| Broche H11 | VDDQ — DQ power supply |
| Broche H12 | VSSQ — DQ ground |
Applications typiques
NT5CC256M16ER-EK convient pour 6 applications: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Laptop Memory
The NT5CC256M16ER-EK is ideal for laptop memory modules due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization provide sufficient capacity for mainstream laptops. The 933MHz data rate ensures smooth multitasking and responsive performance. When used in SODIMM modules, it must be paired with a compatible memory controller that supports DDR3L. The low voltage also reduces heat generation, improving thermal management in thin and light laptops.
Recommandé
Embedded Systems
In embedded systems, the NT5CC256M16ER-EK provides high-density volatile storage for applications like industrial controllers, networking equipment, and medical devices. Its wide temperature range (0°C to +95°C) supports industrial environments. The 1.35V operation is compatible with low-power embedded processors. The device's auto self-refresh and write leveling features simplify system design. For reliable operation, ensure proper decoupling and follow the layout guidelines in the datasheet.
Recommandé
Networking Equipment
The NT5CC256M16ER-EK is suitable for networking equipment such as routers, switches, and firewalls, where high-bandwidth memory is required for packet buffering and routing tables. Its 933MHz data rate provides fast data throughput, and the 4Gb density allows large buffers. The low-voltage operation reduces power consumption in always-on network devices. The TFBGA-96 package is compact, enabling high-density PCB layouts. For optimal performance, use with a DDR3L controller that supports ECC if needed.
Recommandé
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The NT5CC256M16ER-EK's 0°C to +95°C temperature range covers most industrial settings. Its 1.35V operation reduces power and heat, which is critical in sealed enclosures. The 4Gb density supports demanding industrial applications like machine vision and process control. The device's robust design includes features like auto self-refresh to maintain data integrity. When designing, consider using industrial-grade variants like the -EKI for extended temperature ranges.
Recommandé
Consumer Electronics
In consumer electronics such as smart TVs, set-top boxes, and gaming consoles, the NT5CC256M16ER-EK provides high-speed memory for multimedia processing. Its 933MHz data rate supports HD video streaming and gaming. The low-voltage operation is ideal for energy-efficient devices. The 4Gb density allows multiple applications to run simultaneously. The TFBGA-96 package is suitable for compact consumer devices. For best performance, pair with a processor that supports DDR3L-1866.
Recommandé
Automotive Infotainment
The NT5CC256M16ER-EK can be used in automotive infotainment systems, providing memory for navigation, audio, and video playback. Its 1.35V operation reduces power consumption in vehicles. The 0°C to +95°C temperature range is suitable for cabin environments. The 4Gb density supports complex infotainment software. However, for automotive-grade requirements, consider the -EKI variant with industrial temperature range. Ensure compliance with AEC-Q100 if required.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CC256M16ER-EK — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CC256M16ER-EKI | MT41K256M16TW-107:P | AS4C256M16D3LC-10BCN | IS43TR16512B-107MBL | K4B4G1646E-HCK0 | H5TQ2G83AFR-PBC |
|---|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Alliance Memory | ISSI | Samsung Electronics | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Principaux différenciateurs
- Low-voltage operation at 1.35V (vs Standard DDR3 parts at 1.5V)
- Wide temperature range up to +95°C (vs Some competitors limited to +85°C)
- High density 4Gb in 256Mx16 (vs Lower density parts like 2Gb)
Notes de conception
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Use ground planes beneath the memory area to reduce noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor on the power rail. The 1.35V supply must be stable and low-noise; consider a dedicated LDO or DC-DC converter with adequate load transient response.
The NT5CC256M16ER-EK operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -EKI variant with wider temperature range.
Informations de conformité
RoHS compliant per LCSC and JLCPCB listings. Lead-free per product description.
