1EDI20I12MFXUMA1 vs 2ED21064S06JXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDI20I12MFXUMA1 disebabkan oleh Infineon dan 2ED21064S06JXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr 1EDI20I12MFXUMA1 2ED21064S06JXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Isolated single-channel high-side gate driver High-Side and Low-Side Gate Driver
Isolation Type Galvanic (coreless transformer) —
Number of Channels 1 —
Output Current (Source/Sink) 2 A peak —
Active Miller Clamp Current 2 A —
Maximum Operating Voltage (Switch side) 1200 V —
Propagation Delay (typ.) 300 ns —
Input Logic Inverting / Non-inverting —
Konfigurasi Output Single high-side driver —
Minimum Creepage 4 mm —
Short Circuit Protection Yes (clamping) —
Kemasan PG-DSO-8-51 (8-pin DSO, 4 mm creepage) PG-DSO-14 (14-pin SOIC)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range] -40C to +125C
Supply Voltage (Secondary) [DATA_NEEDED: secondary supply voltage range] —
CMTI [DATA_NEEDED: common-mode transient immunity] —
UVLO Yes (secondary side) —
Status RoHS Compliant ROHS3 Compliant
Configuration — Half-Bridge (2 outputs, non-inverting)
Tetstruktur — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
Aras MSL — [DATA_NEEDED: MSL level]
Negative Gate Drive Robustness — -0.7 V

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