1EDI20I12MFXUMA1 vs 2ED21064S06JXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1EDI20I12MFXUMA1 sa pamamagitan ng Infineon at 2ED21064S06JXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 1EDI20I12MFXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Fungsi | Isolated single-channel high-side gate driver | High-Side and Low-Side Gate Driver |
| Isolation Type | Galvanic (coreless transformer) | — |
| Number of Channels | 1 | — |
| Output Current (Source/Sink) | 2 A peak | — |
| Active Miller Clamp Current | 2 A | — |
| Maximum Operating Voltage (Switch side) | 1200 V | — |
| Propagation Delay (typ.) | 300 ns | — |
| Input Logic | Inverting / Non-inverting | — |
| Output Kumpigurasyon | Single high-side driver | — |
| Minimum Creepage | 4 mm | — |
| Short Circuit Protection | Yes (clamping) | — |
| Packhaging | PG-DSO-8-51 (8-pin DSO, 4 mm creepage) | PG-DSO-14 (14-pin SOIC) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Supply Voltage (Secondary) | [DATA_NEEDED: secondary supply voltage range] | — |
| CMTI | [DATA_NEEDED: common-mode transient immunity] | — |
| UVLO | Yes (secondary side) | — |
| Tindminan RoHS | Compliant | ROHS3 Compliant |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| Topolohiya | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Negative Gate Drive Robustness | — | -0.7 V |