1EDI3033ASXUMA1 vs 1ED3124MC12HXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDI3033ASXUMA1 disebabkan oleh Infineon dan 1ED3124MC12HXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDI3033ASXUMA1 1ED3124MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Isolated single-channel gate driver —
Technology Coreless transformer isolation —
Output Current (Source/Sink) 12 A typical —
Isolation Voltage (Vrms) 5700 Vrms —
Number of Channels 1 —
Propagation Delay 60 ns typical —
Target Power Device SiC MOSFET, IGBT —
Kemasan PG-DSO-20-91 (wide-body) PG-DSO-8 (DSO-8)
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Suhu Operasi -40 C to +125 C -40 C to +125 C
Short-Circuit Protection DESAT with programmable blanking —
Miller Clamp Active Miller clamp integrated —
Bootstrap Diode Integrated —
Functional Safety ISO 26262 ASIL D ready —
Creepage Distance 8 mm (typical for wide-body DSO-20) —
Jenis Pemasangan Surface Mount Surface Mount
Compliance RoHS compliant —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
Bilangan Output — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Masa Pertambahan — 15 ns
Masa jatuh — 30 ns
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET
Status RoHS — Compliant

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