1EDI60H12AHXUMA1 vs 1ED020I12B2XUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDI60H12AHXUMA1 disebabkan oleh Infineon dan 1ED020I12B2XUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDI60H12AHXUMA1 1ED020I12B2XUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Single-channel high-side gate driver IC —
Isolation Technology Galvanic isolation via coreless transformer Coreless transformer (magnetic coupling)
Isolation Voltage Rating 1200 V —
Number of Channels 1 1
Peak Source Current (typ.) 10.0 A —
Peak Sink Current (typ.) 9.4 A —
Konfigurasi Output Separate source and sink (SEP) outputs —
Input Compatibility CMOS / TTL logic —
Driven Device IGBT (and MOSFET / SiC compatible) —
Kemasan PG-DSO-8-59 (DSO-8 with 8 mm creepage) PG-DSO-16-15 (300 mil wide-body DSO-16)
Jenis Pemasangan Surface Mount Surface Mount
Creepage Distance 8 mm 8 mm
Short-Circuit Protection Short-circuit clamping —
Aras MSL 2 (1 year floor life) MSL-3 (per JEDEC J-STD-020)
Status RoHS Compliant —
Suhu Operasi -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] -40 °C to +125 °C
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Isolation Voltage (Vrms) — 4500 Vrms
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Compliance — RoHS compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga