1EDI60H12AHXUMA1 vs 1ED020I12B2XUMA1 比較
詳細並排比較 1EDI60H12AHXUMA1 由 Infineon 與 1ED020I12B2XUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ 啟用中
規格比較
| 參數 | 1EDI60H12AHXUMA1 | 1ED020I12B2XUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Product Type | Single-channel high-side gate driver IC | — |
| Isolation Technology | Galvanic isolation via coreless transformer | Coreless transformer (magnetic coupling) |
| Isolation Voltage Rating | 1200 V | — |
| Number of Channels | 1 | 1 |
| Peak Source Current (typ.) | 10.0 A | — |
| Peak Sink Current (typ.) | 9.4 A | — |
| 輸出配置 | Separate source and sink (SEP) outputs | — |
| Input Compatibility | CMOS / TTL logic | — |
| Driven Device | IGBT (and MOSFET / SiC compatible) | — |
| 封裝 | PG-DSO-8-59 (DSO-8 with 8 mm creepage) | PG-DSO-16-15 (300 mil wide-body DSO-16) |
| 安裝類型 | Surface Mount | Surface Mount |
| Creepage Distance | 8 mm | 8 mm |
| Short-Circuit Protection | Short-circuit clamping | — |
| MSL 等級 | 2 (1 year floor life) | MSL-3 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | — |
| 工作溫度 | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] | -40 °C to +125 °C |
| Driver Type | — | Single-channel IGBT gate driver, galvanically isolated |
| Isolation Voltage (Vrms) | — | 4500 Vrms |
| Output Current (typ.) | — | 2 A source / 2 A sink |
| Propagation Delay (typ.) | — | 35 ns |
| Supported Switch Voltage Class | — | Up to 1200 V IGBT / SiC MOSFET |
| DESAT Protection | — | Yes (programmable threshold) |
| Miller Clamp | — | Yes (integrated 2 A clamp FET) |
| Input Supply (VCC1) | — | 5 V (logic side) |
| Output Supply (VCC2) | — | Unipolar 15 V or bipolar -8.5 V / 15 V |
| Compliance | — | RoHS compliant |