1N6263 vs 1N5711 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1N6263 disebabkan oleh STMicroelectronics dan 1N5711 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1N6263 1N5711
Merek STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Diode Type Small Signal Schottky (metal-to-silicon junction) Small-signal Schottky barrier (RF) diode
Repetitive Peak Reverse Voltage (VRRM) 60 V —
Average Forward Current (IF) 15 mA —
Power Dissipation 400 mW 430 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage] 0.41 V (at 1 mA, per MACOM)
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Capacitance [DATA_NEEDED: junction capacitance] —
Reverse Recovery Time Ultrafast (no stored charge, barrier-limited) —
Surge Current Rating (IFSM) [DATA_NEEDED: surge current] —
Technology Guard-ring Schottky barrier —
Application Focus UHF/VHF detection, pulse applications, broad dynamic range —
Kemasan DO-35 (axial, through-hole glass) DO-35 (DO-204AH) hermetic axial-lead glass
Jenis Pemasangan Through Hole Through-Hole
Number of Elements 1 —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Total Capacitance — 2 pF
Junction Capacitance (Cj) — 1 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Suhu Operasi — [DATA_NEEDED: operating temperature range]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

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