1N6263 vs 1N5711 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1N6263 sa pamamagitan ng STMicroelectronics at 1N5711 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
STMicroelectronics
1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics
1N5711 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 1N6263 | 1N5711 |
|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics |
| Kategorya | Diodes | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Diode Type | Small Signal Schottky (metal-to-silicon junction) | Small-signal Schottky barrier (RF) diode |
| Repetitive Peak Reverse Voltage (VRRM) | 60 V | — |
| Average Forward Current (IF) | 15 mA | — |
| Power Dissipation | 400 mW | 430 mW |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Reverse Recovery Time | Ultrafast (no stored charge, barrier-limited) | — |
| Surge Current Rating (IFSM) | [DATA_NEEDED: surge current] | — |
| Technology | Guard-ring Schottky barrier | — |
| Application Focus | UHF/VHF detection, pulse applications, broad dynamic range | — |
| Packhaging | DO-35 (axial, through-hole glass) | DO-35 (DO-204AH) hermetic axial-lead glass |
| Uri ng Pagpapasok | Through Hole | Through-Hole |
| Number of Elements | 1 | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |