2EDL900G3XTMA1 vs 2EDL6014ACG2DXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDL900G3XTMA1 disebabkan oleh Infineon dan 2EDL6014ACG2DXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDL900G3XTMA1 2EDL6014ACG2DXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V Isolated (level-shifted floating high-side)
Number of Channels 2 (high-side + low-side) 2 (high-side + low-side)
Peak Source Current 4 A —
Peak Sink Current 6 A —
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) —
Kemasan TSNP-16 (3x3 mm) with exposed pad 11-WQFN (2.2 x 2.2 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -40 C to +125 C —
Aras MSL 1 —
Status RoHS Compliant —
Driver Type — Half-Bridge Gate Driver
Konfigurasi Output — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Suhu Operasi — -40 C to +125 C
Packing Method — Tape & Reel
Technology Family — EiceDRIVER 2EDL

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