2EDL900G3XTMA1 vs 2EDL6014ACG2DXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EDL900G3XTMA1 sa pamamagitan ng Infineon at 2EDL6014ACG2DXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 2EDL900G3XTMA1 2EDL6014ACG2DXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V Isolated (level-shifted floating high-side)
Number of Channels 2 (high-side + low-side) 2 (high-side + low-side)
Peak Source Current 4 A —
Peak Sink Current 6 A —
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) —
Packhaging TSNP-16 (3x3 mm) with exposed pad 11-WQFN (2.2 x 2.2 mm) with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -40 C to +125 C —
Level ng MSL 1 —
Tindminan RoHS Compliant —
Driver Type — Half-Bridge Gate Driver
Output Kumpigurasyon — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Temperature na Operasyon — -40 C to +125 C
Packing Method — Tape & Reel
Technology Family — EiceDRIVER 2EDL

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