BSC027N04LSGATMA1 vs IAUC60N04S6L039ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC027N04LSGATMA1 disebabkan oleh Infineon dan IAUC60N04S6L039ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC027N04LSGATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 24 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΩ | — |
| Power Dissipation (Ta=25°C) | 2.5 W | — |
| Pembuangan Kuasa (TC=25°C) | 83 W | — |
| Gambaran Suhu Operasi | -55°C to +150°C | — |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8 (SSO8) 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS 6 (trench) |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 60 A |
| Pulsed Drain Current (I_DM) | — | 240 A |
| R_DS(on) max @ V_GS=10V | — | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | — | 42 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rated | — | Yes (100% avalanche tested) |