BSC027N04LSGATMA1 vs IAUC60N04S6L039ATMA1 比較
詳細並排比較 BSC027N04LSGATMA1 由 Infineon 與 IAUC60N04S6L039ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC027N04LSGATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 24 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΩ | — |
| Power Dissipation (Ta=25°C) | 2.5 W | — |
| 功率耗散 (TC=25°C) | 83 W | — |
| 工作溫度範圍 | -55°C to +150°C | — |
| 封裝 | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8 (SSO8) 5x6 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS 6 (trench) |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 60 A |
| Pulsed Drain Current (I_DM) | — | 240 A |
| R_DS(on) max @ V_GS=10V | — | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | — | 42 W |
| 工作接面溫度 | — | -55C to +175C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rated | — | Yes (100% avalanche tested) |