BSC027N04LSGATMA1 vs IPB038N12N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC027N04LSGATMA1 disebabkan oleh Infineon dan IPB038N12N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC027N04LSGATMA1 | IPB038N12N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | OptiMOS 120V |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 24 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΩ | — |
| Power Dissipation (Ta=25°C) | 2.5 W | — |
| Pembuangan Kuasa (TC=25°C) | 83 W | — |
| Gambaran Suhu Operasi | -55°C to +150°C | -55C to +175C (junction) |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS trench MOSFET |
| Aras MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) @ Tc | — | 120 A |
| Power Dissipation (Pd) @ Tc | — | 300 W |
| On-State Resistance (Rds(on)) | — | 3.8 mOhm (typical) |
| Kemasan / Case | — | PG-TO263-3 (D2PAK) |
| Gate Drive | — | Logic-level compatible |
| Standard Package Quantity | — | 1000 (Tape & Reel) |
| Avalanche Rated | — | Yes |