BSC027N04LSGATMA1 vs IPB038N12N3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC027N04LSGATMA1 sa pamamagitan ng Infineon at IPB038N12N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB038N12N3GATMA1 IPB038N12N3GATMA1 - 120V 120A 3.8mOhm N-Ch OptiMOS | Infineon

IPB038N12N3GATMA1 - 120V 120A 3.8mOhm N-Ch OptiMOS | Infineon

IPB038N12N3GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC027N04LSGATMA1 IPB038N12N3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS 120V
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta=25°C 24 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
Pwersang Pinahihigpit (TC=25°C) 83 W —
Hanay ng Temperature na Operasyon -55°C to +150°C -55C to +175C (junction)
Packhaging PG-TDSON-8-1 (SuperSO8 5x6) —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) OptiMOS trench MOSFET
Level ng MSL 1 —
Tindminan RoHS Compliant Compliant
Wala sa Halogen Yes —
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 120 V
Continuous Drain Current (Id) @ Tc — 120 A
Power Dissipation (Pd) @ Tc — 300 W
On-State Resistance (Rds(on)) — 3.8 mOhm (typical)
Packhaging / Kaso — PG-TO263-3 (D2PAK)
Gate Drive — Logic-level compatible
Standard Package Quantity — 1000 (Tape & Reel)
Avalanche Rated — Yes

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