BSC032N04LSATMA1 vs BSC027N04LSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC032N04LSATMA1 disebabkan oleh Infineon dan BSC027N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC032N04LSATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 40V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | 24 A |
| Continuous Drain Current (ID) at Tc=25°C | 98 A | 100 A |
| RDS(on) max at VGS=10V | 3.2 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 52 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Technology | OptiMOS 5 trench | OptiMOS 3 (Trench) |
| Kemasan | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55°C to +175°C | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 3 |
| Jenis Transistor | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.7 mΩ |
| Power Dissipation (Ta=25°C) | — | 2.5 W |
| Pembuangan Kuasa (TC=25°C) | — | 83 W |
| Gambaran Suhu Operasi | — | -55°C to +150°C |
| Aras MSL | — | 1 |
| Boson Bebas | — | Yes |