BSC039N06NSATMA1 vs IPB038N12N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC039N06NSATMA1 disebabkan oleh Infineon dan IPB038N12N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC039N06NSATMA1 IPB038N12N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA 19 A —
Continuous Drain Current (ID) at TC 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value at TC] —
On-Resistance RDS(on) max at VGS=10V 3.9 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Power Dissipation at TA (PD) 2.5 W —
Power Dissipation at TC (PD) 69 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TDSON-8-6 (TDSON EP, 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 8 —
Gate Drive Voltage (VGS) ±20 V max —
Technology OptiMOS 5 (TrenchFET-style) OptiMOS trench MOSFET
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Product Family — OptiMOS 120V
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 120 V
Continuous Drain Current (Id) @ Tc — 120 A
Power Dissipation (Pd) @ Tc — 300 W
On-State Resistance (Rds(on)) — 3.8 mOhm (typical)
Kemasan / Case — PG-TO263-3 (D2PAK)
Gate Drive — Logic-level compatible
Gambaran Suhu Operasi — -55C to +175C (junction)
Standard Package Quantity — 1000 (Tape & Reel)
Avalanche Rated — Yes

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