BSC039N06NSATMA1 vs IPB038N12N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC039N06NSATMA1 sa pamamagitan ng Infineon at IPB038N12N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC039N06NSATMA1 - 60V 3.9mΩ 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 ✓ NakahandaInfineon
IPB038N12N3GATMA1 - 120V 120A 3.8mOhm N-Ch OptiMOS | Infineon
IPB038N12N3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC039N06NSATMA1 | IPB038N12N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA | 19 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value at TC] | — |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Power Dissipation at TA (PD) | 2.5 W | — |
| Power Dissipation at TC (PD) | 69 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | PG-TDSON-8-6 (TDSON EP, 5x6 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 8 | — |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| Technology | OptiMOS 5 (TrenchFET-style) | OptiMOS trench MOSFET |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 120V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) @ Tc | — | 120 A |
| Power Dissipation (Pd) @ Tc | — | 300 W |
| On-State Resistance (Rds(on)) | — | 3.8 mOhm (typical) |
| Packhaging / Kaso | — | PG-TO263-3 (D2PAK) |
| Gate Drive | — | Logic-level compatible |
| Hanay ng Temperature na Operasyon | — | -55C to +175C (junction) |
| Standard Package Quantity | — | 1000 (Tape & Reel) |
| Avalanche Rated | — | Yes |