BSL215CH6327XTSA1 vs BSS316NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSL215CH6327XTSA1 disebabkan oleh Infineon dan BSS316NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSL215CH6327XTSA1 BSS316NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS —
FET Type N-Channel and P-Channel Complementary Pair N-Channel, Enhancement Mode
Drain-Source Voltage (V_DS) 20 V —
Continuous Drain Current (I_D) 1.5 A —
R_DS(on) Max @ V_GS=4.5V 250 mOhm —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] —
Power Dissipation (P_D) 500 mW —
Kemasan / Case PG-TSOP6-6 (6-pin TSOP) —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C —
Configuration Half-bridge (1 N + 1 P) —
Technology OptiMOS trench MOSFET OptiMOS 2 (Trench)
Aras MSL 1 (unlimited) MSL1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
Gambaran Suhu Hubungan Operasi — -55 C to +150 C
Kemasan — PG-SOT23 (SOT-23-3)
Lead Plating — Pb-free (Matte Tin)
Automotive Qualification — AEC-Q101 qualified

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga