BSZ180P03NS3EGATMA1 vs IPD380P06NMATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ180P03NS3EGATMA1 disebabkan oleh Infineon dan IPD380P06NMATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon
BSZ180P03NS3EGATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSZ180P03NS3EGATMA1 | IPD380P06NMATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | P-Channel MOSFET | — |
| Technology | OptiMOS P3 | OptiMOS P-channel trench |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) - Ta | 9 A | — |
| Continuous Drain Current (ID) - Tc | 39.5 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance (RDS(on)) max | 18 mΩ @ VGS = -10 V | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (QG) total | [DATA_NEEDED: QG total] | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 40 W | 125 W |
| Gambaran Suhu Operasi | -55°C to +150°C (TJ) | -55 C to +150 C (junction) |
| Kemasan | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TO252-3 (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 |
| Lead-Free | Yes | Yes |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage V(BR)DSS | — | 60 V |
| Arus Kumpal Tetap (TC=25°C) | — | 35 A |
| Gate Drive | — | Logic-level compatible |
| Avalanche Rated | — | Yes (per manufacturer datasheet) |
| Target Applications | — | Reverse-polarity protection, load switch, BMS, high-side switch |
| Automotive Qualified | — | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] |