H5AN4G6NBJR-UHC vs H5AN4G6NBJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G6NBJR-UHC disebabkan oleh SK hynix dan H5AN4G6NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G6NBJR-UHC | H5AN4G6NBJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gbit | 4 Gbit |
| Organisasi | 256M x 16 | — |
| Clock Frequency | 1.6 GHz | 1.6 GHz (internal reference per distributor data) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V nominal (1.14 V to 1.26 V) |
| Technology | CMOS | CMOS |
| Suhu Operasi | -40C to +95C | -40C to +95C |
| Kemasan | FBGA-96 (PBGA-96) | FBGA-96 / TFBGA (PBGA96) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | — |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes (command/address CRC) | — |
| Status RoHS | Compliant | Compliant |
| Memory Organization | — | 256M x 16 |
| Kadar Data | — | 2666 Mbps |
| Operating Current | — | 38 mA (typical, per distributor data) |
| Antaramuka | — | Parallel |
| Body Size | — | 13 mm, 1.2 mm profile, 0.8 mm ball pitch |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration; write leveling |
| Protection Functions | — | Asynchronous reset; CRC; data mask |
| Refresh | — | Auto self-refresh |
| Packaging | — | Tray |