H5AN4G6NBJR-UHC vs H5AN4G6NBJR-VKC 比較
詳細並排比較 H5AN4G6NBJR-UHC 由 SK hynix 與 H5AN4G6NBJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G6NBJR-UHC | H5AN4G6NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 4 Gbit | 4 Gbit |
| 組織 | 256M x 16 | — |
| Clock Frequency | 1.6 GHz | 1.6 GHz (internal reference per distributor data) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V nominal (1.14 V to 1.26 V) |
| Technology | CMOS | CMOS |
| 工作溫度 | -40C to +95C | -40C to +95C |
| 封裝 | FBGA-96 (PBGA-96) | FBGA-96 / TFBGA (PBGA96) |
| 安裝類型 | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | — |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes (command/address CRC) | — |
| RoHS 狀態 | Compliant | Compliant |
| Memory Organization | — | 256M x 16 |
| 資料速率 | — | 2666 Mbps |
| Operating Current | — | 38 mA (typical, per distributor data) |
| 介面 | — | Parallel |
| Body Size | — | 13 mm, 1.2 mm profile, 0.8 mm ball pitch |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration; write leveling |
| Protection Functions | — | Asynchronous reset; CRC; data mask |
| Refresh | — | Auto self-refresh |
| Packaging | — | Tray |