H5AN4G6NBJR-VKC vs H5AN4G8NBJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G6NBJR-VKC disebabkan oleh SK hynix dan H5AN4G8NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G6NBJR-VKC | H5AN4G8NBJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gbit | 4 Gb |
| Memory Organization | 256M x 16 | 512M x8 |
| Kadar Data | 2666 Mbps | 2666 Mbps (DDR4-2666) |
| Clock Frequency | 1.6 GHz (internal reference per distributor data) | — |
| Supply Voltage (VDD) | 1.2 V nominal (1.14 V to 1.26 V) | 1.2 V |
| Operating Current | 38 mA (typical, per distributor data) | — |
| Antaramuka | Parallel | — |
| Technology | CMOS | CMOS DRAM |
| Suhu Operasi | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| Kemasan | FBGA-96 / TFBGA (PBGA96) | FBGA-78 (7.5 x 11 mm) |
| Body Size | 13 mm, 1.2 mm profile, 0.8 mm ball pitch | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration; write leveling | — |
| Protection Functions | Asynchronous reset; CRC; data mask | — |
| Refresh | Auto self-refresh | [DATA_NEEDED: refresh rate] |
| Status RoHS | Compliant | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Packaging | Tray | Tray |
| Memory Interface | — | Parallel |
| Volatile / Non-Volatile | — | Volatile |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for 2666 grade] |
| Status Lingkungan Hidup | — | Active |