H5AN4G6NBJR-VKC vs H5AN4G8NBJR-VKC 比較
詳細並排比較 H5AN4G6NBJR-VKC 由 SK hynix 與 H5AN4G8NBJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G6NBJR-VKC | H5AN4G8NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 4 Gbit | 4 Gb |
| Memory Organization | 256M x 16 | 512M x8 |
| 資料速率 | 2666 Mbps | 2666 Mbps (DDR4-2666) |
| Clock Frequency | 1.6 GHz (internal reference per distributor data) | — |
| Supply Voltage (VDD) | 1.2 V nominal (1.14 V to 1.26 V) | 1.2 V |
| Operating Current | 38 mA (typical, per distributor data) | — |
| 介面 | Parallel | — |
| Technology | CMOS | CMOS DRAM |
| 工作溫度 | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| 封裝 | FBGA-96 / TFBGA (PBGA96) | FBGA-78 (7.5 x 11 mm) |
| Body Size | 13 mm, 1.2 mm profile, 0.8 mm ball pitch | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration; write leveling | — |
| Protection Functions | Asynchronous reset; CRC; data mask | — |
| Refresh | Auto self-refresh | [DATA_NEEDED: refresh rate] |
| RoHS 狀態 | Compliant | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Packaging | Tray | Tray |
| Memory Interface | — | Parallel |
| Volatile / Non-Volatile | — | Volatile |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency for 2666 grade] |
| 生命週期狀態 | — | Active |