H5AN4G8NBJR-PBC vs K4A4G085WD-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-PBC disebabkan oleh SK hynix dan K4A4G085WD-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ AktifPengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-PBC | K4A4G085WD-BCTD |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Jenis Antaramuka | Parallel, JEDEC DDR4 | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Speed Grade | PBC | — |
| Clock Frequency | [DATA_NEEDED: Clock Frequency] | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Kemasan | 78-ball FBGA | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Normal Operating Case Temperature | 0C to 85C | — |
| Extended Temperature Range | up to 95C case (with increased refresh) | — |
| Lead Free | Yes | — |
| Boson Bebas | Yes | — |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC | — |
| Die Generation | — | D-die |
| Density | — | 4 Gb |
| Kadar Data | — | 2666 Mbps/pin |
| Tegangan Pemberi Arus | — | 1.2 V |
| Suhu Operasi | — | 0C to +85C |
| Ball Pitch | — | 0.8 mm |
| Antaramuka | — | DDR4 (JEDEC-compatible) |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| Status RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |