H5AN4G8NBJR-PBC vs K4A4G085WD-BCTD 比較
詳細並排比較 H5AN4G8NBJR-PBC 由 SK hynix 與 K4A4G085WD-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ 啟用中規格比較
| 參數 | H5AN4G8NBJR-PBC | K4A4G085WD-BCTD |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Memory Density | 4 Gbit | — |
| 組織 | 512M x 8 | 512M x 8 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 介面類型 | Parallel, JEDEC DDR4 | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Speed Grade | PBC | — |
| Clock Frequency | [DATA_NEEDED: Clock Frequency] | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| 封裝 | 78-ball FBGA | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Normal Operating Case Temperature | 0C to 85C | — |
| Extended Temperature Range | up to 95C case (with increased refresh) | — |
| Lead Free | Yes | — |
| 無鹵素 | Yes | — |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC | — |
| Die Generation | — | D-die |
| Density | — | 4 Gb |
| 資料速率 | — | 2666 Mbps/pin |
| 供應電壓 | — | 1.2 V |
| 工作溫度 | — | 0C to +85C |
| Ball Pitch | — | 0.8 mm |
| 介面 | — | DDR4 (JEDEC-compatible) |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS compliance status] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |