H5AN4G8NBJR-UHC vs K4A8G085WC-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-UHC disebabkan oleh SK hynix dan K4A8G085WC-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-UHC | K4A8G085WC-BCRC |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 8 Gbit |
| Organisasi | 512M x 8 | 1G x 8 |
| Kadar Data | 2400 Mbps (PC2400) | 2400 Mbps (DDR4-2400) |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Antaramuka | DDR4 (JEDEC) | — |
| Kemasan | TFBGA-78 (11 x 7.5 mm) | 78-ball FBGA (TFBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Lifecycle Code | Active | — |
| Status RoHS | Compliant (Rohs Code: Yes) | Compliant |
| REACH Compliance | Compliant | — |
| Manufacturer | SK Hynix Inc. | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Latensi CAS | [DATA_NEEDED: CAS latency for -UHC speed bin] | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] | Auto/Self refresh |
| Terminal Pitch | — | 0.8 mm |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |