H5AN4G8NBJR-VKC vs H5AN4G6NBJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-VKC disebabkan oleh SK hynix dan H5AN4G6NBJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-VKC | H5AN4G6NBJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| Kadar Data | 2666 Mbps (DDR4-2666) | — |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Kemasan | FBGA-78 (7.5 x 11 mm) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency for 2666 grade] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| Status RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) | — |
| Packaging | Tray | — |
| Status Lingkungan Hidup | Active | — |
| Density | — | 4 Gb |
| Organisasi | — | 256M x 16 |
| Tegangan Pemberi Arus | — | 1.2 V |
| Antaramuka | — | CMOS, fully synchronous |
| Package Code | — | TFBGA (FBGA-96) |
| Package Shape | — | Rectangular |
| Package Width | — | 7.5 mm |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet |
| Self Refresh | — | Auto / Self Refresh |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Lead-Free / Halogen-Free | — | Yes (per datasheet cover: Lead-Free & Halogen-Free) |
| Speed Grade | — | -RDC (see manufacturer datasheet for validated data-rate bin) |