H5AN8G6NDJR vs NT5AD512M16A4-GZ Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NDJR disebabkan oleh SK hynix dan NT5AD512M16A4-GZ disebabkan oleh Nanya Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NDJR | NT5AD512M16A4-GZ |
|---|---|---|
| Merek | SK hynix | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| Organisasi | 512M x 16 | 512M x 16 |
| Kadar Data | 3200 Mbps (DDR4-3200) | — |
| Tegangan Pemberi Arus | 1.2 V | 1.2V |
| Kemasan | 96-ball FBGA (13mm x 7.5mm) | TFBGA-96 |
| Number of Terminals | 96 | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 cycles (at 3200 Mbps) | — |
| Access Mode | Multi Bank Page Burst | Four Bank Page Burst |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | Compliant |
| Ciri-ciri | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| Frekuensi Klock Maksimum | — | 1200 MHz |
| Lebar Bus Data | — | 16 bits |
| Interleaved Burst Length | — | 4, 8 |
| Gambaran Suhu Operasi | — | Commercial and Industrial |
| Lead-Free | — | Yes |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| CRC Function | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling Function | — | Yes |
| ZQ Calibration Function | — | Yes |