H5AN8G8NCJR-XNC vs H5AN8G8NCJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-XNC disebabkan oleh SK hynix dan H5AN8G8NCJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-XNC | H5AN8G8NCJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $30.69 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Organisasi | 1 Gb x 8 | x8 |
| Kadar Data | 3200 Mbps (DDR4-3200) | up to 2666 Mbps |
| Clock Frequency | 1.6 GHz | — |
| Tegangan Pemberi Arus | 1.14 V to 1.26 V (1.2 V nominal) | 1.2 V (VDD) |
| Kemasan | 78-ball FBGA, 7.5 mm x 11 mm | 78-ball FBGA |
| Suhu Operasi | 0 C to +85 C | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR4 (8-bit data interface) | DDR4 (JEDEC standard) |
| Architecture | Bank-group based DDR4 | — |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge | — |
| On-Chip Termination | Dynamic ODT | — |
| Calibration | ZQ calibration, write leveling | — |
| Error Handling | CRC function | — |
| Reset | Asynchronous reset | — |
| Data Mask | Data mask function | — |
| Current - Operating | 39 mA | — |
| Current - Standby | 30 mA | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes | — |
| Density | — | 8 Gb (1 GB) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Boson Bebas | — | Yes |