H5AN8G8NCJR-XNC vs H5AN8G8NCJR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NCJR-XNC sa pamamagitan ng SK hynix at H5AN8G8NCJR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NCJR-XNC | H5AN8G8NCJR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $30.69 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit | — |
| Organisasyon | 1 Gb x 8 | x8 |
| Rate ng Data | 3200 Mbps (DDR4-3200) | up to 2666 Mbps |
| Clock Frequency | 1.6 GHz | — |
| Volte ng Pagbibigay | 1.14 V to 1.26 V (1.2 V nominal) | 1.2 V (VDD) |
| Packhaging | 78-ball FBGA, 7.5 mm x 11 mm | 78-ball FBGA |
| Temperature na Operasyon | 0 C to +85 C | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | DDR4 (8-bit data interface) | DDR4 (JEDEC standard) |
| Architecture | Bank-group based DDR4 | — |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge | — |
| On-Chip Termination | Dynamic ODT | — |
| Calibration | ZQ calibration, write leveling | — |
| Error Handling | CRC function | — |
| Reset | Asynchronous reset | — |
| Data Mask | Data mask function | — |
| Current - Operating | 39 mA | — |
| Current - Standby | 30 mA | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes | — |
| Density | — | 8 Gb (1 GB) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Wala sa Halogen | — | Yes |