H5AN8G8NCJR-XNC vs H5AN8G8NCJR-RDC 比較
詳細並排比較 H5AN8G8NCJR-XNC 由 SK hynix 與 H5AN8G8NCJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NCJR-XNC | H5AN8G8NCJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $30.69 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | — |
| 組織 | 1 Gb x 8 | x8 |
| 資料速率 | 3200 Mbps (DDR4-3200) | up to 2666 Mbps |
| Clock Frequency | 1.6 GHz | — |
| 供應電壓 | 1.14 V to 1.26 V (1.2 V nominal) | 1.2 V (VDD) |
| 封裝 | 78-ball FBGA, 7.5 mm x 11 mm | 78-ball FBGA |
| 工作溫度 | 0 C to +85 C | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR4 (8-bit data interface) | DDR4 (JEDEC standard) |
| Architecture | Bank-group based DDR4 | — |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge | — |
| On-Chip Termination | Dynamic ODT | — |
| Calibration | ZQ calibration, write leveling | — |
| Error Handling | CRC function | — |
| Reset | Asynchronous reset | — |
| Data Mask | Data mask function | — |
| Current - Operating | 39 mA | — |
| Current - Standby | 30 mA | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes | — |
| Density | — | 8 Gb (1 GB) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| 無鹵素 | — | Yes |